2SC1741 Search Results

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt ­ a g e o p e ra tio n .

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097 SC-72 T146
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor

Contextual Info: 2SC1741S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • large collector current: lc = 500 mA • low collector saturation voltage, which allows low-voltage operation • complementary pair with 2SA854S 2SC1741S (SPT)

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor 50V, 0.5A I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter

TRANSISTOR 246

Abstract: 2SC1741S 2SC4097 "Power transistor" 2SC24 NPN Silicon Epitaxial Planar Transistor 2SA1036K 2SA1577 2SA854S 2SC2411K
Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A 2) Low VCE(sat). Ideal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. FExternal dimensions (Units: mm) FStructure

2sc1741

Abstract: 2SC1652 2SC1652M 2SA854 2SA874 2SA874M 2SC1741S
Contextual Info: ROHm 2S C 1652 2S C 1652M 2SC1741 2SC1741S N P N v V ^ V sii-yJViVvliT- 2SC1652 2SC1652M 2SC1741 2SC1741S : mm • m î^ m 2SC1652 M ,A s^ o o o k 3 2SC1652M H -^3 2) (!) K o . 45 -4â(3) El 5.08 1 FTR -ijB11) ä '> 'J - X i t 2S C1741 500m A lo m ax = -0-Í(3)

2SC3199

Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
Contextual Info: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S •Features 1) High ICMax. lcMax.= 0.5mA •External dimensions (Units : mm) 2) Low VcBsat). Optimal for low voltage operation.

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

c102 TRANSISTOR

Abstract: 2N3904 A41 transistor c102 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2n2222+331+transistors 2SC4043 TRANSISTOR 618 609 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

2SA1036K

Abstract: 2SA1577 QR 2SA1577 2SA854S 2SC1741S SC-72
Contextual Info: 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC1741S zExternal dimensions (Units : mm) 2SC1741S 2±0.2 3Min. 3±0.2 4±0.2 (15Min.) zFeatures 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S.

Contextual Info: 2SC1741AS Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.390 h(FE) Max. Current gain.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SA854S TRANSISTOR PNP 1. EMITTER FEATURES z Large IC. z Low VCE(sat). Idea for Low-voltage Operation. z Complements the 2SC1741S. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1741A

Abstract: 2SC1741 2SC1741AS 2SC1741A/2SC1741
Contextual Info: ROHM CO L T D ' - 4DE 22SC SC1741 1741AS A 7020= =)=) DOOSfab? 2 M R H M D h ~7 y y 7 $ / I ransistors • 2SC1741A /2SC1741 AS " T -2 7 - Ö 9 ^ tt^ ifllffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistors • ¿'fJfê^ÉËil/Dimensîons Unit : mm)

Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SC1741AS Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) SPT (SC-72) Packaging specifications and hFE (1) (2) (3) Type 2SC1741AS

2SC3359

Abstract: 2SC1741S 2SC3359S 2SD1484K 2SD1949
Contextual Info: Transistors 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S 96-678-D15 (SPEC-D16) 318 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

8086

Abstract: 2SC1741AS
Contextual Info: SPICE PARAMETER 2SC1741AS by ROHM TR Div. * 2SC1741AS NPN BJT model * Date: 2006/12/06 .MODEL 2SC1741AS NPN + IS=43.522E-15 + BF=212.62 + VAF=100 + IKF=1.1384 + ISE=43.554E-15 + NE=1.4099 + BR=10.166 + VAR=100 + IKR=71.304E-3 + ISC=19.105E-12 + NC=1.8086

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1741S TRANSISTOR NPN 1. EMITTER FEATURES z High IC z Low VCE(sat). Optimal for Low Voltage Operation z Complements the 2SA854S 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure

2sc1741

Abstract: C1741QR c1741
Contextual Info: f ' 7 > y X 5 /" T ransistors 2SC1741 O C A 4 " f Jt 4 ^ fc w w l # 4 • Ml i t 2SC1741 /2SC 1741S ^ ^ y y ^ U - t i N P N '> • ; = > > h ? > y ' x $ Power Amp. Epitaxial Planar NPN Silicon Transistors I $ ^ J fiv H ilil/D im e n s io n s Uni* : mm 1) l c = 5 0 0 m A t ± ^ L ' o

2sc1741

Abstract: 2SC1741SS WO-2
Contextual Info: h ~p> v 7 £ / I ransistors 2SC1741 _ _ 2SC1741 S 2SC1741 /2SC1741S '>•;=]> h-7>v*$ Epitaxial Planar NPN Silicon Transistors 4^1 !^ * 'U S/M edium Power Amp. • W ß^J& ßÖ /Dim ensions Unit : mm 1) l c = 5 0 0 m A t ± # l - ' „ 2SC1741S.<t° ;

transistor 206

Abstract: 2SA1036K 2SA1577 500ma pnp AS 205 transistor "Power transistor" 2sa157 ic 204 transistor 2SA854s 2SA854S
Contextual Info: Transistors Medium Power Transistor *32V, *0.5A 2SA1036K / 2SA1577 / 2SA854S FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FExternal dimensions (Units: mm) FStructure