2SC1623 Search Results

2SC1623 sot-23

Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

2SA812K

Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
Contextual Info: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA

2SC1623K

Abstract: SOT-23-hg 2SC1623K-P sot-23 Marking l7 TRANSISTOR NPN 60V 600 MARKING CODE
Contextual Info: 2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200 Typ , VCE=6V, IC=1mA. High Voltage:VCEO=50V. A L 3 3 C B Top View

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

C1984

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ±0.2 +0.1 0.65 –0.15

hFE-200

Abstract: 2SC1623 l4 transistor l6 sot23 l5 transistors L5 SOT23 MARKING l7 transistor marking L6 l5 transistor SOT-23 marking l4 sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ)VCE=6V, z High voltage:VCEO=50V 1. BASE IC=1mA 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

npn sot23 l6

Abstract: 2SC1623 marking 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn transistor 6090 hFE CLASSIFICATION Marking
Contextual Info: 2SC1623 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: • v - 7*- f t h NEC ' > U = i > h 7 > y x ^ S ilico n T ra n s is to r 2SC1623 N P N l t f ^ ^ y 7 M ^ > y n > b ^ > m ' s 7 > m $ m m e A - Ì 7 U 7 K lC fflt U T M J S T 'T o 0 2 S A 8 1 2 ¿; 3 > 7 ° U ;< 2 . 8 ± 0.2 1.5 U î f f f l f è t t o O h F E * '" l'o

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 100 mA ICM: Collector-base voltage 60 V V(BR)CBO:

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range

Transistor hFE CLASSIFICATION Marking CE

Abstract: 2SC1623
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V Maximum Ratings Symbol V CEO

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

2SA812

Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.

Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS i r m illim e te rs • Com plem entary to 2SC1623 • High DC C u rrent Gain: hpg = 200 TY P . V c e 5 - 6 .0 V , lc = —1.0 m A

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AU DI O FREQU EN CY GEN ERAL PU RPOSE AM PLI FI ER N PN SI LI CON T RAN SI ST OR M I N I M OLD 3 1 ̈ 2 DESCRI PT I ON SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s

2SC1623

Abstract: 2SA81 2SA812 transistor 2sa812 npn
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC1623 NPNエピタキシアル形シリコン・トランジスタ 低周波増幅用 外形図（単位：mm） ○超小形外形であり，ハイブリッドIC用として最適です。

2SA812A

Abstract: 2SC1623A
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

2SC1623

Abstract: 2SC1623-L4
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA812

Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
Contextual Info: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2SC1623

Abstract: L4 SOT23-3 TRS1623
Contextual Info: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

bvceo

Contextual Info: 2SC1623F 150 mA, 60 V NPN Epitaxial Planar Transistor Elektronische Bauelemente DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80