2SB934 Search Results

2SB934

Abstract: 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1 257, 2SD1257A 2SD1257, 2S D 1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem entary Pair w ith 2SB934 ■ Features • L ow c o lle c t o r - e m itte r sa tu r a tio n v o lta g e V<_e (Sat>

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For Power switching Complementary to 2SD1257 • Package • Low collector-emitter saturation voltage VCE(sat)

2SB0934

Abstract: 2SB934 2SD1257
Contextual Info: Power Transistors 2SB0934 2SB934 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1257 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: Product specification 2SB934 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SB934

Abstract: 2SD1257
Contextual Info: Power Transistors 2 S B 9 3 4 2SB934 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S D 1 2 5 7 U nit I mm • • • • 3.7 max 8.7 max. • Features h—• l.im a x 6.5 max. Low collector-emitter saturation voltage Vcf.k»»

2SB934

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB934 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB0934

Abstract: 2SB934 2SD1257
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For Power switching Complementary to 2SD1257 • Features ue pl d in an c se ed lud pl vi

2SB934

Abstract: 2SD1257 2SD1257A tf 130
Contextual Info: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB934 80 VCEO emitter voltage 2SD1257A 100 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1257 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: Power T ransistors 2SB934 2SB934 Silicon PNP Epitaxial Planar Type P ackage Dim ensions P ow er Switching C om plem entary Pair with 2 S D 1 2 5 7 • Features • • • • Low collector-emitter saturation voltage VcE(sao Good linearity of DC current gain (I i f e )

2SB0934

Abstract: 2SB934 2SD1257
Contextual Info: Power Transistors 2SB0934 2SB934 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –15 A Collector current

2SD1257

Abstract: 2SB934 2SD1257A
Contextual Info: Power Transistors 2SD1257, 2SD1257A 2SD1257, 2SD1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem enta ry Pair w ith 2SB934 ■ Features • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e V<_E (SJt>

2SB934

Abstract: 2SD1257
Contextual Info: Power Transistors 2SB934 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –15 A Collector current IC

2SB0934

Abstract: 2SB934 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0934 2SB934 V 100 Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F