2SA1464 Search Results

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: MCC TM Micro Commercial Components 2SA1464-P 2SA1464-Q 2SA1464-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors High fT: fT=400MHZ

Contextual Info: MCC TM Micro Commercial Components 2SA1464-P 2SA1464-Q 2SA1464-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors High fT: fT=400MHZ

Marking B12

Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
Contextual Info: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO

2SC3739

Abstract: marking Y12
Contextual Info: MCC 2SA1464
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO

Contextual Info: 2SA1464 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage

2SA1464

Abstract: marking Y12 marking y13
Contextual Info: 2SA1464 2SA1464 TRANSISTOR PNP FEATURES SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR Power dissipation 0.2 W (Tamb=25℃) 1. 02 Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 0. 95¡ À0. 025

75150 PC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings

marking y13

Abstract: 2SA1464 marking Y12
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP 1. EMITTER 2. BASE 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 80¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.5 Collector-base voltage

Contextual Info: Product specification 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

marking SMD Y12

Abstract: SMD y14 2SA1464 SMD Transistors y13 Y13 smd marking Y12
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High fT: fT=400MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) 1. BASE 2. EMITTER 3. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 x Case Material: Molded Plastic. UL Flammability

se5020

Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
Contextual Info: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES

TCA 975

Abstract: 2SC3739 transistor Y7
Contextual Info: DATA SHEET SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3739 M HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters 2.8 ± 0 2 • High Gain Bandwidth Product: f j = 200 MHz MIN. • Complementary to 2SA1464

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SA1464

Abstract: 1S955 2SC3739
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674