2SA1323
Abstract: No abstract text available
Text: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping
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2SA1323
2SC3314
2SA1323
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2SC3314
Abstract: 2SA1323 transistor NF
Text: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage
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2SC3314
2SA1323
100MHz
2SC3314
2SA1323
transistor NF
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2SA1323
Abstract: 2SC3314
Text: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping
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2SC3314
2SA1323
2SA1323
2SC3314
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Untitled
Abstract: No abstract text available
Text: 2SA1323 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1323
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) M Di ain sc te on na tin nc ue e/ d 0.75 max. • Optimum for high-density mounting
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2SC3314
2SA1323
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2SA1323
Abstract: 2SC3314
Text: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage
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2SC3314
2SA1323
2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314
Text: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios
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2SC3314
2SA1323
2SA1323
2SC3314
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Untitled
Abstract: No abstract text available
Text: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n
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2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314
Text: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping • High transition frequency fT
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2SA1323
2SC3314
2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314 transistor nf
Text: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 ● ● • Absolute Maximum Ratings 0.8 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping.
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2SC3314
2SA1323
2SA1323
2SC3314
transistor nf
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2SA1323
Abstract: 2SC3314
Text: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1323
2SC3314
15nductor
2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314
Text: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1323
2SC3314
100MHz
2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314
Text: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1323
2SC3314
2SA1323
2SC3314
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2SA1323
Abstract: 2SC3314
Text: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Allowing supply with the radial taping • High transition frequency fT • Optimum for high-density mounting
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2SA1323
2SC3314
2SA1323
2SC3314
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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150-mF
Abstract: 2SA1323 2SC333
Text: - - « J* m ^ @ m • 2 SC3 3 1 3 t o : iw fö T a s it r a : AM/FM 7 ~s-%<D RF i ü , g£, Ä j S l^ Ä S o • 2 S C 3 3 I 4 T O fö T : ¡ * Ä if O T 2SA1323 ¿ 3 > 7 -,J > 4 $ Ä : AM/FM 7 § Vceo (V 20 Vebo (V) 5 M M H z) ! c (mA) 30 Cre(pF) hFE Pc(mW)
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200MHz
2SA1323
900MHz
20thA
20IHA
150-mF
2SA1323
2SC333
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2SA1317
Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60
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2SA1313
2SA1314
2SA1315
2SA1316
SA1317
SA1318
46K/23K
2SC3401
2SA1347
10K/10K
2SA1317
2SA1348
2SC3331
2sc3345
2SC3398
2SA1319
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SA1301 TOSHIBA
Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207
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2SA1415
2SA1782
2SA1048
2SA1127
SA1299
2SA933S
2SA104S
2SA1337
SA112
2SA1301 TOSHIBA
da 1191
2sa970
Toshiba 2SB754
2SA904A
2SA1038
2Sa1173
2SA1323
2SB646
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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