2N671 Search Results

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N6719 TO-237 Plastic Package Designed for Applilcation as a Video Output to Drive Color CRT ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N6715

Abstract: MPS6715 HOTS
Contextual Info: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier

2N6718

Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
Contextual Info: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter

IT 237

Abstract: 2N6710
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6710 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage

2N6717

Abstract: 2N6728 2N6716 92GU05 92GU06 T060
Contextual Info: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

2N6715

Contextual Info: 2N6715 SILICON NPN TRANSISTOR PACKAGE STYLE TO-237 DESCRIPTION: The 2N6715 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS IC 2.0 A VCE 40 V PDISS 2.0 W @ TC = 25 OC 0.85 W @ TA = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6715

Contextual Info: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

2n6719

Contextual Info: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500

nsdu57

Abstract: TO-237 2N6556 2N5415
Contextual Info: NATL SEMICÔND DISCRETE ESE D • bSG113Q 0D377flfi 7 ■ T-2 7-01 PNP Medium Power Transistors by Ascending Vceo (Continued) H fe @ Ic/V ce Vce (sat) (V) Max Part No. Vceo (V) Min Max (mA/V) 2N4236 2N6710 2N6729 2N6732 92PE77C 92PU56 D41E7 D43C10 D43C11

2N6715

Abstract: 2N6714 2N6716
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. E 1 = EMITTER 2 = BASE

2N6718

Abstract: IC350 2N6718L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A

2N6718

Contextual Info: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR

Contextual Info: 2N6715 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N6713 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)30m

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2N6714

Abstract: 2N6715
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A

2sc498

Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237

2N6730

Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
Contextual Info: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A

2N6726

Abstract: 2N6714 2N6727 SE192 TRANSITON
Contextual Info: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N