Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Mask Set Errata 2N36B Rev 08 AUG 2013 Mask Set Errata for Mask 2N36B Introduction This report applies to mask 2N36B for these products: • KINETIS72MHZ Errata ID Errata Title 3863 ADC: In 16-bit differential mode, ADC may result in a conversion error when positive input is near upper
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KINETIS72MHZ
2N36B
2N36B
KINETIS72MHZ
16-bit
8-/16-bit
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Mask Set Errata 2N36B Rev. 02 APR 2013 Mask Set Errata for Mask 2N36B Introduction This report applies to mask 2N36B for these products: • KINETIS72MHZ Errata ID Errata Title 3863 ADC: In 16-bit differential mode, ADC may result in a conversion error when positive input is near upper
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KINETIS72MHZ
2N36B
2N36B
KINETIS72MHZ
16-bit
8-/16-bit
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29B52595F13
52595F09
2N3800
germanium
diode germanium tu 38 e
2n4051 motorola
2N4280
2N3980
1N3492
MC710F
2N4276
2n3817
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2N3686
Abstract: 2N3685 2N3684 2N3687
Text: MfÜIPfllIL 2 N 3 6 8 4 -2 N 3 6 8 7 N -C h an n el JFE T FEATURES PIN CONFIGURATION • c G S S ^ 1‘2 p F • Exceptionally high figure of merit • Radiation Im m unity TO-72 • Symmetrical devices for low-level choppers, switches, multiplexers and low noise amplifiers
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2N3684-2N36Ã
2N3686
2N3685
2N3684
2N3687
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TG 2309
Abstract: 2N4240 TRANSISTOR BDX 538 2N35842N35852N4240 2N3585 TEXAS 2N3583 bdx 32 1N914 2N3583 2N3584
Text: T Y P E S 2N3583. 2N 3 5 8 4. 2N3585. 2N4240 N -P -N S I L I C O N P O W E R T R A N S IS TO R S HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILITA R Y APPLICATIONS • Min V b R CEO of 300 V (2N3585, 2N4240) • Typ VcE(sat) of 0.25 V at Iß = 125 mA, lc = 1 A
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2N3583.
2N3584.
2N3585,
2N4240
2N4240)
2N3583
2N3584
TG 2309
TRANSISTOR BDX 538
2N35842N35852N4240
2N3585
TEXAS 2N3583
bdx 32
1N914
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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