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    2N2960 Search Results

    2N2960 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2960 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.6 / Hfe=- / fT(Hz)=- / Pwr(W)=0.6 Original PDF
    2N2960 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.6 / Hfe=- / fT(Hz)=- / Pwr(W)=0.6 Original PDF
    2N2960 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2960 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2960 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2960 Unknown Vintage Transistor Datasheets Scan PDF
    2N2960 Unknown Vintage Transistor Datasheets Scan PDF
    2N2960 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2960 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2960 Unknown GE Transistor Specifications Scan PDF
    2N2960 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2960 Raytheon Selection Guide 1977 Scan PDF
    2N2960 Semitronics Metal Can Transistors - Silicon Small Signal Transistors Scan PDF

    2N2960 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1675L

    Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


    Original     		PDF

    250M

    Abstract: 2N2960
    Text: 2N2960 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2960 O205AD) 10/10m 1-Aug-02 250M 2N2960

    Untitled

    Abstract: No abstract text available
    Text: 2N2960 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2960 O205AD) 10/10m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2960 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2960 O205AD) 10/10m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2960 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.35 h(FE) Max. Current gain.


    Original     		PDF 2N2960 Freq250M

    2sc1675l

    Abstract: 2SC105 BF235 LOW-POWER SILICON NPN TL3643 2N5028 250m TO-226-AA MPS2222M BFX97A
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


    Original     		PDF 2SC380A-R BSV85 2SC580 2SC1675K 2SC2787 2SC620 BFX95A BFX97A 2sc1675l 2SC105 BF235 LOW-POWER SILICON NPN TL3643 2N5028 250m TO-226-AA MPS2222M

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


    Original     		PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N2961

    Abstract: 2N3015 2n3299 2N3107
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ VCB µA) (µ (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) *ICEO *ICES *ICEV *ICER ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


    Original     		PDF 402N3110 2N3114 2N3119 2N3120 2N3122 2N3133 2N3134 2N3137 2N3244 2N3245 2N2961 2N3015 2n3299 2N3107

    2N3134

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) (V) *ICEO *ICES *ICEV *ICER ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


    Original     		PDF 2N2854 2N2855 2N2890 2N3388 2N3420 2N3421 2N3439 2N3440 04-April 2N3134

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original     		PDF 2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


    OCR Scan     		PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


    OCR Scan     		PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    2N295

    Abstract: 2N2891 2N223
    Text: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221


    OCR Scan     		PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 2N2237 2N2243 2N295 2N2891 2N223

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    2n2907 pnp

    Abstract: 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 2N2221
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts V cE(Sat) @ Ic/lß Min/Max mA Volts mA/mA ft MHz Min Max hfe @ ic Cob pF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2960 2N2961 2N3072 2n2907 pnp 2N2219 2N2219A 2N2220 2N2221

    2N2961

    Abstract: 2N3053 NPN transistor 2N3072 2N3015 2N3053 2N3114 2N3137 2N2854 2N2890 2N2904A
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO v EBO •CBO v CBO (V) (V) (V) (HA) m *VCEH MIN MIN MIN *lCEO “ Ic e s "*'CEV "*'CER ® lC ® v CE VCE(SAT) ® 'C h (mA) (MHz) (V) (V) hFE MIN MAX MAX Cob *TYP *on *otf NF


    OCR Scan     		PDF 2N2854 2N28S5 2N2890 2N2B91 2N2904A 2N3300 2N3326 2N3388 2N3420 2N3421 2N2961 2N3053 NPN transistor 2N3072 2N3015 2N3053 2N3114 2N3137

    Untitled

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and


    OCR Scan     		PDF 500mA. 2N2222A/JAN 2N2221A/JAN 2N2219A/JAN 2N2218A/JAN 968-9211um T-27-27 O-116) 14-Lead 100BSC

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF