29MAR2006 Search Results

Contextual Info: THIS DRAWING C IS UNPUBLISHED. RELEASED BY C O P Y R I G H T 2009 TYCO ELECTRONICS CORPORATION. FOR ALL W PUBLICATION INTERNATIONAL RIGHTS LOC DIST REVISIONS B RESERVED. LTR DESCRIPTION DWN DATE ECR-06-0078I 5 30NOV2000 29MAY200 I 5MAR2002 29MAR2006 E C R -09 - 02509

Contextual Info: 2 THIS £L DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATIO N R 1G H T S 20 L OC RESERVED. GP DIST R E V I S I O N S 00 LTR Al HOUSING: CONTACT: DESCRIPTIO N DATE REV PER E C O - 06 - 0 0 6 5 2 5 29MAR2006

MP1470

Contextual Info: TH I S DRAW I NG I S U N P U B L I S H E D . COP Y R I GH T BY 20 REVISIONS R E L E A S E D POR P U B L I C A T I ON TYCO ELECTRONICS ALL CORPORATION RIGHTS RESERVED. LTR -TEST EAC CLAMP I NG SCREW 2 9.5 3 D E S C R I P T I ON DATE R E V I S E D PER 0 G 3 B - 0 I 19-01

Contextual Info: SN74CBT1G384 SINGLE FET BUS SWITCH www.ti.com SCDS065G – JULY 1998 – REVISED JUNE 2006 FEATURES • • 5-Ω Switch Connection Between Two Ports TTL-Compatible Control Input Levels DBV PACKAGE TOP VIEW A 1 B 2 GND 3 DCK PACKAGE (TOP VIEW) VCC 5 A 1

Contextual Info: SN74AUC1G79 SINGLE POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP www.ti.com SCES387I – MARCH 2002 – REVISED JUNE 2006 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Optimized for 1.8-V Operation and Is 3.6-V I/O

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R|3 H T $ LO C GP RESERVED. REV IS IO N S D I ST 00 LTR Ol 02 03 - HOUSING 29.74 : PTION DATE PROPOSED ADD I 4 I 0 I 4 I - 2 AND K E E P O U T AREA

Contextual Info: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB

Contextual Info: SN74LVC1G04-Q1 SINGLE INVERTER GATE www.ti.com SCES482B – AUGUST 2003 – REVISED JUNE 2006 FEATURES • • • • • 1 • • • • • Qualification in Accordance With AEC-Q100 (1) Qualified for Automotive Applications Customer-Specific Configuration Control Can

Contextual Info: SN74AUC1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT www.ti.com SCES382H – MARCH 2002 – REVISED JUNE 2006 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Optimized for 1.8-V Operation and Is 3.6-V I/O

Contextual Info: 2 THIS £L DRAWING IS U N P U B L I S H E D . BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION 20 LO C R 1G H T S R E S E R V E D . R E V ISIONS DIST 00 GP LTR DESCRIPTION DATE REV PER ECO- 06 - 0 0 6 5 2 5 REV PER E C O - 0 8 - 0 2 3 2 2 2

Contextual Info: SN74LVC1G04-Q1 SINGLE INVERTER GATE www.ti.com SCES482B – AUGUST 2003 – REVISED JUNE 2006 FEATURES • • • • • 1 • • • • • Qualification in Accordance With AEC-Q100 (1) Qualified for Automotive Applications Customer-Specific Configuration Control Can

STGB35N35LZT4

Abstract: STGB35N35LZ STGB35N35LZ-1 GB35N35LZ Igbt high voltage low current
Contextual Info: STGB35N35LZ EAS 350 mJ, 350 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Applications ■ 3

Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 CORPORATION. ALL RIGHTS 20 LOC REV 1SIONS D I ST GP RE S E RV E D. 00 p LTR 01 02 03 A HOUSI NG: CONTACT: ' 2\ 1 D E S C R 1P T I O N

JESD97

Abstract: STE45NK80ZD
Contextual Info: STE45NK80ZD N-channel 800V - 0.11Ω - 45A ISOTOP SuperFREDmesh MOSFET General features Type VDSS RDS on ID Pw STE45NK80ZD 800V <0.13Ω 45A 600W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility

Contextual Info: SN74CBTD1G384 SINGLE FET BUS SWITCH WITH LEVEL SHIFTING www.ti.com SCDS066K – JULY 1998 – REVISED JUNE 2006 FEATURES • • • 5-Ω Switch Connection Between Two Ports TTL-Compatible Control Input Levels Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

Contextual Info: TMS320C6205 FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS106F − OCTOBER 1999 − REVISED MARCH 2006 D High-Performance Fixed-Point Digital D D D D D D Signal Processor DSP − TMS320C6205 − 5-ns Instruction Cycle Time − 200-MHz Clock Rate − Eight 32-Bit Instructions/Cycle

Contextual Info: TPS65012 www.ti.com SLVS504A – MARCH 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR Li-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

Contextual Info: TPS65012 www.ti.com SLVS504A – MARCH 2004 – REVISED JANUARY 2005 POWER AND BATTERY MANAGEMENT IC FOR Li-ION POWERED SYSTEMS FEATURES • • • • • • • • • • • Linear Charger Management for Single Li-Ion or Li-Polymer Cells Dual Input Ports for Charging From USB or

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST 00 p LTR DESCRIPTION DATE DWN APVD A REV PER E C O - 0 0 6 5 2 5

Contextual Info: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistors TAB 3 1 D²PAK TAB 3 12 Application ■ I²PAK

Contextual Info: STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS @Tjmax RDS(on) max ID STB12NM50N 550 V 0.38 Ω 11 A STD12NM50N 550 V 0.38 Ω 11 A

atmel h020

Abstract: atmel h022 atmel 0713 0x16000000 Atmel PART DATE CODE AA13 ARM926EJ-S MAC110 PBGA420 SPEAR-09-H022
Contextual Info: SPEAR-09-H022 SPEAr Head200 ARM 926, 200K customizable eASIC™ gates, large IP portfolio SoC Features • ARM926EJ-S - fMAX 266 MHz, 32 KI - 16 KD cache, 8 KI - KD TCM, ETM9 and JTAG interfaces ■ 200K customizable equivalent ASIC gates 16K LUT equivalent with 8 channels internal

STGB35N35LZ

Abstract: STGB35N35LZ-1 r1550 p2 JESD97 GE 019-4
Contextual Info: STGB35N35LZ-1 STGB35N35LZ N-channel clamped - 350mJ - D2PAK / I2PAK Internally clamped PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat Max IC STGB35N35LZ Clamped < 2V 15A STGB35N35LZ-1 Clamped < 2V 15A • Polysilicon gate voltage driven

Contextual Info: SN74AUC1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT www.ti.com SCES383G – MARCH 2002 – REVISED JUNE 2006 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Optimized for 1.8-V Operation and Is 3.6-V I/O