29F200A Search Results

Contextual Info: PRELIMINARY — 29F200AT/29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements

Contextual Info: AM DH 5.0 Am29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

29F200B

Contextual Info: PRELIM INARY A M D * Am29F200B 2 Megabit 256 K x 8-B it/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V + 1 0 % for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDZ1 PRELIMINARY Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDH Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Contextual Info: PRELIMINARY A M D ii 29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: PRELIMINARY A M D ii 29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: PRELIMINARY A M D ii 29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDH 29F200A 2 Megabit 256 K X S-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC standards

Contextual Info: AMDH Am29F200B 2 Megabit 256 K x 8-Bit/I 28 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — Minimizes system level power requirements — Embedded Erase algorithm automatically

Contextual Info: AMD£I Am29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Manufactured on 0.32 pm process technology — Compatible with 0.5 [am 29F200A device

29F200AB

Abstract: 29f200at 29F200A da1048 29F200
Contextual Info: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s