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    2955E Search Results

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    2955E Price and Stock

    Renesas Electronics Corporation F2955EVB

    BOARD
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    DigiKey F2955EVB Box 2 1
    • 1 $248.75
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    Avnet Americas F2955EVB Box 12 Weeks 1
    • 1 $228.85
    • 10 $228.85
    • 100 $221.11111
    • 1000 $221.11111
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    Mouser Electronics F2955EVB 3
    • 1 $248.75
    • 10 $248.75
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    onsemi MTD2955ET4

    PFET DPAK 60V 0.20R TR
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    Bristol Electronics MTD2955ET4 1,420
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    ComSIT USA MTD2955ET4 4,134
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    onsemi MMFT2955ET1G

    MOSFET POWER 1A 60V SOT-223
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    Siemens 3VA52955ED312AA0

    BRKR 3VA52 3P 15A 35KA FTFM 100
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    DigiKey 3VA52955ED312AA0 Bulk 1
    • 1 $1204.41
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    Mouser Electronics 3VA52955ED312AA0
    • 1 $1373.51
    • 10 $1297.3
    • 100 $1297.3
    • 1000 $1297.3
    • 10000 $1297.3
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    Siemens 3VA52955ED322AA0

    BRKR 3VA52 3P 15A 35KA FTFM 100
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    DigiKey 3VA52955ED322AA0 Bulk 1
    • 1 $1258.45
    • 10 $1258.45
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    Mouser Electronics 3VA52955ED322AA0
    • 1 $1435.14
    • 10 $1355.51
    • 100 $1355.51
    • 1000 $1355.51
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    Find more 2955E price and stock on Findchips.com

    2955E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P2955E

    Abstract: 2955E TP2955E TP2955 sped sipa
    Text: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by 2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES


    OCR Scan     		MTP2955E/D 8S036. MTP2955BD P2955E 2955E TP2955E TP2955 sped sipa PDF

    2955E

    Abstract: AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3
    Text: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		MMFT2955E r14525 MMFT2955E/D 2955E AN569 MMFT2955E MMFT2955ET1 MMFT2955ET3 PDF

    2955E

    Abstract: MTA2955E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM


    OCR Scan     		T0-220 O-220 b3b7254 2955E b3b7554 MTA2955E PDF

    25CC

    Abstract: 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1
    Text: MOTOROLA SC XSTRS/R F b ftE b3b?254 D DCnfl53Q ôST • MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA 2955E Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r M o to ro la Preferred Device P-Channel Enhancem ent-M ode Silico n Gate D P A K for Surface M o u n t or


    OCR Scan     		G01flS30 25CC 369A-10 AN569 MTD2955E MTD2955E-1 ims 200 MTD2955E1 PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    zt751

    Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
    Text: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30


    OCR Scan     		OT-223 BSP19AT1 PZTA42T1 BF720T1 BSP20AT1 SP19A BF720 SP20A PZTA98T1 PZTA92T1 zt751 3055L 2955E 3055e zta96 2N02L marking 651 sot223 PDF

    2955E

    Abstract: TD 1409
    Text: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.


    Original     		MMFT2955E 2955E TD 1409 PDF

    2955E

    Abstract: equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3
    Text: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original     		MMFT2955E OT-223 OT-223 MMFT2955E/D 2955E equivalent transistor 2955e microdot assembly instructions AN569 MMFT2955E MMFT2955ET1 MMFT2955ET1G MMFT2955ET3 PDF

    2955e

    Abstract: equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261
    Text: 2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time.


    Original     		MMFT2955E OT-223 OT-223 MMFT2955E/D 2955e equivalent transistor 2955e dc motor forward reverse control c source code motor speed circuit motor forward reverse control Power MOSFET 12 Amps, 60 Volts p-Channel h 2n3904 MARKING QG 6 PIN PWM techniques to-261 PDF