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    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		PDF KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    Original     		PDF KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)


    Original     		PDF KM611001/L KM611001/L KM611001P/LP 28-DIP-400 KM611001J/LJ 28-SOJ-400A 576-bit

    LH521002AK25

    Abstract: No abstract text available
    Text: LH521002A CMOS 256K x 4 Static RAM • Low Power Standby when Deselected High frequency design techniques should be employed to obtain the best performance from this device. Solid, low impedance power and ground planes, with high frequency decoupling capacitors, are desirable. Series


    Original     		PDF LH521002A LH521002A 28SOJ SOJ28-P-400) 28SOJ400 28-pin, 400-mil LH521002AK25

    K6E1004C1B

    Abstract: K6E1004C1B-15
    Text: PRELIMINARY K6E1004C1B-C/B-L CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		PDF K6E1004C1B-C/B-L 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX K6E1004C1B K6E1004C1B-15

    SOJ28-P-400

    Abstract: No abstract text available
    Text: LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained IDR under this Data Retention condition. CMOS Standby Current (ISB2) is reduced on the ‘L’ version with respect to


    Original     		PDF LH521002C 2613-banchi, J63428 SMT94020 SOJ28-P-400

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		PDF KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B

    32-PIN

    Abstract: No abstract text available
    Text: LH521002B FEATURES • Fast Access Times: 17/20/25/35 ns • JEDEC Standard Pinouts • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully Static Operation • 2 V Data Retention L Version • Packages: 28-pin, 300-mil SOJ (Preliminary)


    Original     		PDF LH521002B 28-pin, 300-mil 400-mil 28SOJ400 32-PIN

    KM641001A

    Abstract: KM641001A-15 KM641001A-20
    Text: PRELIMINARY CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995


    Original     		PDF KM641001A 256Kx 15/17/20ns 190/180/170mA 28-SOJ-400A KM641001A KM641001A-15 KM641001A-20

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 41001A-20

    Untitled

    Abstract: No abstract text available
    Text: LH521002C SHARP CMOS 256K x 4 Static RAM Data Sheet FEATURES The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) ¡s reduced on the ‘L’ version with respect to


    OCR Scan     		PDF 28-pin, 300-mil 400-mil LH521002C 28SOJ400 LH521 28-Din.

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)


    OCR Scan     		PDF KM641001 KM641001 576-bit

    42-SDIP-600

    Abstract: CF RM sot89 P2400F 12-DIPH-300
    Text: PACKAGE DIMENSIONS Dim ensions in Milimeters 8-DIP-300 .n n n n LJ LI o U LJ 12-DIPH-300 12 n ri a n n n o tx u lj" 'U L J 'T T 6 KP 283 Cl C ff ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters •K-DIPH-300 16-DIP-300A nrn¡~ir~ir-|¡~ir~in o LJ LJ LJ LJ LJ LJ U


    OCR Scan     		PDF 8-DIP-300 12-DIPH-300 K-DIPH-300 16-DIP-300A 22-DIP-400 24-DIP-600B OT-23 OT-89 -220-F 42-SDIP-600 CF RM sot89 P2400F 12-DIPH-300

    Untitled

    Abstract: No abstract text available
    Text: KM641001/L CMOSSRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES Fast Access Time 20,25,35ns(Max.) Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) 0.5mA(Max.) - L-Ver. only Operating KM641001/L - 20 : 150mA(Max.) KM641001/L - 25 : 130mA(Max.)


    OCR Scan     		PDF KM641001/L KM641001/L 150mA 130mA 110mA KM641001/LP 28-DIP-400 KM641001/LJ

    KM641001-20

    Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001 256Kx KM641001-20 KM641001-25 KM641001-35 KM641001P: 28-DIP-400 KM641001 28-SOJ-400B KM641001-20 KM641001-25 TAE 1102 KM641001-35 KM641001P d02144

    28DIP300

    Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
    Text: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS


    OCR Scan     		PDF 24-DIP-300 28-DIP-300 28-DIP-600B 32-DIP-600 32-S0P-525 32-TS0P1-0814F 32-TSOP1-0814R 32-TSOP1-0820F 32-TSOP1-0820R 10MAX 28DIP300 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)


    OCR Scan     		PDF KM611001/L KM611001/L-20 KM611001/L-25 KM611001/L-3 100mA KM611001P/LP: 28-DIP-400 KM611001J/LJ: 28-SQJ-400A KM611001/L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170m 12/12/13ns 8/9/10ns