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IXYS Corporation IXGT28N120B IGBT PT 1200V 50A TO268AA
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DigiKey	IXGT28N120B	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGT28N120BD1 IGBT PT 1200V 50A TO268AA
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DigiKey	IXGT28N120BD1	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH28N120BD1 IGBT 1200V 50A 250W TO247
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DigiKey	IXGH28N120BD1	Tube			30	1 - 10 - 100 $8.41267 1000 $8.41267 10000 $8.41267	Buy Now
IXYS Corporation IXGQ28N120BD1 IGBT 1200V 50A 250W TO3P
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DigiKey	IXGQ28N120BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGQ28N120B IGBT Transistors 28 Amps 1200 V 3.5 Rds
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Mouser Electronics	IXGQ28N120B					1 - 10 - 100 $4.12 1000 $3.13 10000 $2.52	Get Quote

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28N120B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
igbt induction cooker Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B
IXGQ28N120B Abstract: 28N120 induction cooker application notes IXGQ28N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1
igbt induction cooker Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1
28N120 Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247 28N120
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)
28N120 Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056 Text: High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	PDF	28N120B IC110 O-220 28N120B 28N120 igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	PDF	28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120
Untitled Abstract: No abstract text available Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120B IC110 O-268 O-247 728B1 123B1 065B1
28N120B Abstract: RG201 Text: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	28N120B O-268 O-247 728B1 123B1 065B1 RG201
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	PDF	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2