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RC snubber scr design Abstract: scr RC snubber design snubber relay scr snubber dc electromagnetic relay snubber RC snubber scr design for relay Text: GN3 Series 3 Phase Solid State Relay - DC Input Three-phase solid-state relay Ratings up to 50 amps @ 530Vac DBC substrate for superior thermal performance Epoxy-free design reduces internal com Back-to-Back dual SCR output for heavy industrial loads 100k-cycle UL508 endurance rating for enhanced reliability	Original	PDF	530Vac 100k-cycle UL508 48-600Vac 4-32Vdc RC snubber scr design scr RC snubber design snubber relay scr snubber dc electromagnetic relay snubber RC snubber scr design for relay
Untitled Abstract: No abstract text available Text: ACON TM DC-DC CONVERTERS GH Single output 25 to 150W Input Ranges: 10 - 75V Single Output: 3.3V, 5.0V, 7.5V 12V, 15V, 24V 28V, 48V, 60V, 80V Dual Output: +5V/+12V +5V/+15V Bipolar Output: ±12V ±15V FEATURES General: • Small footprint : 1.9” x 3.0”	Original	PDF	10-75Vdc
ssr 25A Abstract: RC snubber scr design IEC 61000-4-3 level GN350DSR scr RC snubber design GN350DSZ GN350DLZ snubber relay Text: GN3 Series 3 Phase Solid State Relay - DC Input Three-phase solid-state relay Ratings up to 50 amps @ 530Vac DBC substrate for superior thermal performance Epoxy-free design reduces internal component stress Back-to-Back dual SCR output for heavy industrial loads	Original	PDF	530Vac 100k-cycle UL508 48-600Vac 4-32Vdc ssr 25A RC snubber scr design IEC 61000-4-3 level GN350DSR scr RC snubber design GN350DSZ GN350DLZ snubber relay
Untitled Abstract: No abstract text available Text: MJHK Series 3.2X5 Ceramic SMD Oscillator  Low Profile SMD Package  32.768KHZ  RoHS Compliant  HCMOS Output Frequency 32.768KHZ Temperature Stability* See Part Number Guide for Options Operating Temperature Range (See Part Number Guide for Options)	Original	PDF	768KHZ 10TTL 28mSec EIA-481-B, 200mm
Untitled Abstract: No abstract text available Text: NN511000 series Fast Page Mode CMOS 1Mx 1bit Dynamic RAM NPN a DESCRIPTION The NN511000 series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 1 bit. The NN511000 series is fabricated with advanced CMOS technology and designed with innovative design tech	OCR Scan	PDF	NN511000 G001375 000137b NH511000 NN511000XX-X 128ms
Untitled Abstract: No abstract text available Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a DESCRIPTION The N N 51V4260A series is a high perform ance C M O S D ynam ic Random Access M em ory organized as 262,144 words by 16 bits. The N N 51V4260A series is fabricated with advanced C M OS technology and designed with innovative design	OCR Scan	PDF	NN51V4260A 256KX 16bit 51V4260A NN51V4260AL 0QD1330