MS75103-1
Abstract: 21aw MS91189 MS75103-9 MS75103-10
Text: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28M PART NUMBER 28M121K 28M151K 28M181K 28M221K 28M271K 28M331K 28M391K 28M471K 28M561K 28M681K 28M821K 28M102K 28M122K 28M152K 28M182K 28M222K 28M272K 28M332K 28M392K 28M472K 28M562K 28M682K 28M822K 28M103K 28M123K
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28M121K
28M151K
28M181K
28M221K
28M271K
28M331K
28M391K
28M471K
28M561K
28M681K
MS75103-1
21aw
MS91189
MS75103-9
MS75103-10
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MS75103
Abstract: No abstract text available
Text: STANDARD RF INDUCTORS - THRU HOLE 28M 28MLF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, Molded COTS PART MIL SPEC L NUMBER DESIGNATION µH 28M121K MS91189-14 28M151K MS91189-15 28M181K MS91189-16 28M221K MS91189-17 28M271K MS91189-18 28M331K MS91189-19 28M391K MS91189-20
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28MLF*
28M121K
MS91189-14
28M151K
MS91189-15
28M181K
MS91189-16
28M221K
MS91189-17
28M271K
MS75103
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28MLF
Abstract: No abstract text available
Text: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28MLF PART NUMBER 28M121KLF 28M151KLF 28M181KLF 28M221KLF 28M271KLF 28M331KLF 28M391KLF 28M471KLF 28M561KLF 28M681KLF 28M821KLF 28M102KLF 28M122KLF 28M152KLF 28M182KLF 28M222KLF 28M272KLF 28M332KLF 28M392KLF 28M472KLF
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28MLF
28M121KLF
28M151KLF
28M181KLF
28M221KLF
28M271KLF
28M331KLF
28M391KLF
28M471KLF
28M561KLF
28MLF
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Untitled
Abstract: No abstract text available
Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage
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2SA1893
--35V,
--10mA,
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr
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2SC5076
--10mA,
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Untitled
Abstract: No abstract text available
Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)
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2SC6075
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RC14M30K
Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
Text: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28
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IP68/69K
SL105.
sl46D2.
INDUTSCA07EN
RC14M30K
RM20M12K
UTS712D10P32
souriau 841
UTS7142G1P
UTS0124P
UTS78D4P32
UTS61412S
AWG 24 multi strand copper wire
UTS6JC147S
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2SK2229
Abstract: No abstract text available
Text: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive
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2SK2229
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2SK2200
Abstract: No abstract text available
Text: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2
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2SK2200
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2229 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2
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2SK2229
0-12n
20kfl)
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K2846
Abstract: VDD480 2SK2846
Text: 2SK2846 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2846 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 4.2Ω (標準) z オン抵抗が低い。
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2SK2846
VDD480
K2846
20070701-JA
K2846
2SK2846
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k2835
Abstract: 2SK2835
Text: 2SK2835 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2835 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω(標準) z オン抵抗が低い。
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2SK2835
VDD100
K2835
20070701-JA
k2835
2SK2835
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k3374
Abstract: 2SK3374
Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
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2SK3374
k3374
2SK3374
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D2461
Abstract: 2SD2461
Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)
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2SD2461
D2461
2SD2461
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2SA1892
Abstract: 2SC5029
Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W
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2SA1892
2SC5029
2SA1892
2SC5029
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C5562
Abstract: 2SC5562
Text: 2SC5562 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5562 Switching Regulator and High-Voltage Switching Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max), (IC = 0.3 A) • High breakdown voltage: VCEO = 800 V
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2SC5562
C5562
2SC5562
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k2599
Abstract: 2SK2599
Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance
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2SK2599
k2599
2SK2599
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D2480
Abstract: 2SD2480
Text: 2SD2480 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2480 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)
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2SD2480
20070701-JA
D2480
2SD2480
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D2462
Abstract: 2SB1602 2SD2462
Text: 2SD2462 東芝トランジスタ シリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)
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2SD2462
2SB1602
20070701-JA
D2462
2SB1602
2SD2462
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C5562
Abstract: 2SC5562
Text: 2SC5562 東芝トランジスタ シリコンNPN三重拡散形 2SC5562 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大
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2SC5562
20070701-JA
C5562
2SC5562
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)
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2SC5029
2SA1892
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive
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2SJ378
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Untitled
Abstract: No abstract text available
Text: SERIES GOWAIMDA • R.F. MOLDED CHOKES Style - Phenolic: LT 4, Grade 1, Class B Powdered Iron: LT 10, Grade 1, Class A Maximum Operating Temp. - Phenolic: -55° to +125°C Powdered Iron: -55° to +105°C Maximum Temperature Rise- Phenolic: 35°C Powdered Iron: 15°C
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28M562K
28M682K
28M822K
28M103K
28M123K
MS75103-6
MS75103-7
MS75103-8
MS75103-9
MS75103-10
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5075 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • High Speed Switching : tr=1.0/<s Max. , tf=1.0,«s (Max.)
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2SC5075
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