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    28F020* PLCC Search Results

    28F020* PLCC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    28F002-T

    Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T PDF

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N PDF

    IN6AG

    Abstract: 28F020 intel 28F020
    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020 PDF

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020 PDF

    P28F020-150

    Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020 PDF

    Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077 PDF

    intel eprom Intelligent algorithm

    Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
    Contextual Info: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read


    OCR Scan     		28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020 PDF

    SSC16E

    Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program


    OCR Scan     		28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020 PDF

    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program


    OCR Scan     		28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28, PDF

    28F020

    Abstract: 80C186 80c186 specification update
    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		28F020 2048K 32-Pin 32-Lead AP-325 ER-20 -80V05 28F020 80C186 80c186 specification update PDF

    n28f020-150

    Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		28F020 2048K -80V05, -80V05 n28f020-150 PDF

    Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150 PDF

    i80C186

    Abstract: M28F020 29024
    Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024 PDF

    28F020

    Abstract: CAT28F020 Nippon capacitors
    Contextual Info: CAT28F015 Cost Effective Solution for the 2 MB Flash CAT28F015 Licensed Intel second source 1.5 Megabit CMOS Flash Memory FEATURES • Stop Timer for Program/Erase ■ Fully Compatible to 2 MB Flash 28F020 – No hardware or software changes ■ On-Chip Address and Data Latches


    Original     		CAT28F015 28F020) 32-pin 300-T 28F020 CAT28F020 Nippon capacitors PDF

    Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		28F020 2048K AP-325 -80V05, -80V05 28F020 PDF

    Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read


    OCR Scan     		28F020 2048K 32-Pin 32-Lead PDF

    TN28F020-150

    Abstract: 28F020 80C186 intel 28F020
    Contextual Info: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP


    Original     		28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020 PDF

    28F020T

    Abstract: intel 28F020
    Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 pS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles a 12.0 V ±5% V pp ■ High-Performance Read


    OCR Scan     		28F020 2048K E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28FQ20-150 N28F020-150 TE28F02Q-90 TE28F020-120 28F020T intel 28F020 PDF

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 PDF

    28f020-150

    Abstract: 28F020-200 intel 28F020
    Contextual Info: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical


    OCR Scan     		28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020 PDF

    Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase


    OCR Scan     		28F020) 32-pin 24-40-LEAD M0-015 PDF

    28F020

    Abstract: A15C CAT28F020 a5c capacitor PLCC 32 intel package dimensions
    Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase


    OCR Scan     		CAT28F015 28F020) 32-pin 24-40-LEAD M0-015 DDD34D3 28F020 A15C CAT28F020 a5c capacitor PLCC 32 intel package dimensions PDF

    Contextual Info: Cost Effective Solution for the 2 MB Flash ££ C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes ■ Stop Tim er for Program/Erase


    OCR Scan     		28F020) 32-pin CAT28F015NI-90BTE7 PDF

    Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■


    OCR Scan     		28F020 2048K 32-Pin -80V05, -80V05 PDF