28DEC94 Search Results

Contextual Info: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20

Contextual Info: THIS DRAWING IS U N P U B U SH ED . COPYRIGHT 1993 RELEASED FOR PUBLICATION OCT .1993. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS J XT LTR -A 2.5 D DESCRIPTION REVISED FJBO— 0 9 9 6 — 0 3 (A) DATE DWN APVD 17NOV03 Y .N T .K •±0.05

sub65p06-20

Abstract: SUB65P06 SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 1993 OCT .1 9 9 3 . REVISIONS J LTR D DESCRIPTION REVISED D DWN DATE FJBO— 0 9 9 6 — 0 3 17NO V03 APVD Y.N T.K ± 0 .0 5 □ □ □

SUB65P06

Abstract: SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)