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    27MHZ TRANSISTOR Search Results

    27MHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    27MHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27mhz rf amplifier

    Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor

    706H

    Abstract: PC10 HT82K74E
    Text: HT82K74E/HT82K74EE 27MHz Keyboard/ Mouse TX 8-Bit MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features · Operating voltage: · 128´8 bits data EEPROM for HT82K74EE fSYS= 27MHz: 3.0V~3.3V for crystal mode


    Original     		PDF HT82K74E/HT82K74EE 27MHz HA0075E HT82K74EE 27MHz: 27MHz) 16-bit 706H PC10 HT82K74E

    27mhz rf ic

    Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier

    NTE237

    Abstract: No abstract text available
    Text: NTE237 Silicon NPN Transistor RF Power Output PO = 3.5W, 27MHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		PDF NTE237 27MHz) 500mA 500mA, 100mA -200mA 50MHz, NTE237

    2SC4272

    Abstract: ITR06606 ITR06607 ITR06608 ITR06611
    Text: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications


    Original     		PDF 2SC4272 EN2970A 27MHz 2SC4272 ITR06606 ITR06607 ITR06608 ITR06611

    2SC4272

    Abstract: EN2970
    Text: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0


    Original     		PDF EN2970 2SC4272 27MHz 2SC4272] 25max 2SC4272 EN2970

    2sc2166

    Abstract: No abstract text available
    Text: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.


    Original     		PDF 2SC2166 27MHz, CH2SC2166 27MHz 2sc2166

    2SC1969

    Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.


    Original     		PDF 2SC1969 Gpe12dB 27MHz, 27MHz 2SC1969 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz

    27MHz rf transmitter

    Abstract: 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282
    Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE282 27MHz, 400mA 100mA -15mA, -100mA 400mW, 27MHz 27MHz rf transmitter 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282

    2SC2314

    Abstract: transistor 2sc2314 2sc2314 transistor DSA0027023
    Text: Ordering number:EN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C


    Original     		PDF EN485F 2SC2314 27MHz 2009B 2SC2314] O-126 2SC2314 transistor 2sc2314 2sc2314 transistor DSA0027023

    2SC4735

    Abstract: 2084B
    Text: Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF EN3974 2SC4735 27MHz 2084B 2SC4735] 2SC4735 2084B

    EC12T

    Abstract: 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497
    Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF ENN3974 2SC4735 27MHz 2084B 2SC4735] EC12T 2SC4735 ITR07494 ITR07495 ITR07496 ITR07497

    27MHz rf transmitter

    Abstract: 27mhz transmitter circuit NTE282
    Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE282 27MHz, 400mA 100mA 400mW, 27MHz 27MHz rf transmitter 27mhz transmitter circuit NTE282

    2SC4272

    Abstract: ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611
    Text: Ordering number:ENN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 0.4 1.0


    Original     		PDF ENN2970 2SC4272 27MHz 2SC4272] 25max 2SC4272 ITR06606 ITR06607 ITR06608 ITR06609 ITR06610 ITR06611

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    27mhz

    Abstract: 2SC4272 SMD 6 PIN IC cb transceiver
    Text: Transistors SMD Type 27MHz CB Transceiver Driver Applications 2SC4272 Features Small Size Making It Easy To Provide High-Density, Small-Sized Hybrid ICs. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 75 V Collector-Emitter Voltage


    Original     		PDF 27MHz 2SC4272 500mA 27MHz 2SC4272 SMD 6 PIN IC cb transceiver

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions unit:mm 2084B [2SC4735] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • Large power type such as PC=1.5W when used without heatsink.


    Original     		PDF ENN3974 2SC4735 27MHz 2084B 2SC4735]

    Untitled

    Abstract: No abstract text available
    Text: HT82D22R/HT82D22A 27MHz Two Channel RX 8-Bit MCU Features • USB Specification Compliance - Conforms to USB specification V2.0 - Conforms to USB HID specification V1.11 · RF tuner, mixer, transistors, passives, coils, and · Supports 1 Low-speed USB control endpoint and


    Original     		PDF HT82D22R/HT82D22A 27MHz 12MHz 16-bit

    2SC2314

    Abstract: 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor
    Text: Ordering number:ENN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126


    Original     		PDF ENN485F 2SC2314 27MHz 2009B 2SC2314] O-126 2SC2314 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor

    27mhz rf amplifier

    Abstract: 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION •High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS Ta=25℃


    Original     		PDF 2SC2716 Gp12dB 27MHz, 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716

    27mhz rf amplifier NPN transistor to220

    Abstract: 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110
    Text: Ordering number:ENN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220


    Original     		PDF ENN462E 2SC2078 27MHz 2010C 2SC2078] O-220 27mhz rf amplifier NPN transistor to220 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110

    2SC781

    Abstract: 27mhz transistor TA-251C 251C 2SC78X
    Text: 2SC781 2SC781 NPN I t 7 i v 7 U 3 V h ^ V v X ^ /N P N SILICON EPITAXIAL TRANSISTOR 27MHz ^ h "7 V ' > “- / \ ^ i l ’tti^ jffl/T ra n s c e iv e r Power Output ft ^/FEATURES •2SC78X 27MHz CB K S g L S f o $ tz W £ < D tz i6 A M % m £ f< v n ffi< D m M i


    OCR Scan     		PDF 2SC781 27MHz 2SC78X 2SC781 27MHz, 800mW TC-25Â O-205MD 27mhz transistor TA-251C 251C

    2SC2312

    Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
    Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating


    OCR Scan     		PDF 2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb

    transistor 2SC2078

    Abstract: 2sc2078 2sc2078 Transistor 2SC207S
    Text: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current


    OCR Scan     		PDF EN462E 2SC2078 27MHz 150fl 2SC2078 2SC207S transistor 2SC2078 2sc2078 Transistor 2SC207S