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    NTE236 Search Results

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    NTE236 Price and Stock

    NTE Electronics Inc NTE236

    Rf Bjt, Npn, 25V, 6A, 27Mhz, To-220Ab; Transistor Polarity:Npn; Collector Emitter Voltage Max:25V; Transition Frequency:27Mhz; Power Dissipation:18W; Continuous Collector Current:6A; No. Of Pins:3Pins; Dc Current Gain Hfe Min:180Hfe Rohs Compliant: Yes |Nte Electronics NTE236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE236 Bulk 1
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    Quest Components NTE236 2
    • 1 $12.402
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    NTE236 1
    • 1 $9.3
    • 10 $7.75
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    NTE Electronics Inc NTE2362

    Transistor, bjt, pnp,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes |Nte Electronics NTE2362
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    NTE Electronics Inc NTE2361

    Transistor, bjt, npn,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes |Nte Electronics NTE2361
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    Onlinecomponents.com NTE2361 34
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    Bristol Electronics NTE2361 4 2
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    NTE2361 3
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    Quest Components NTE2361 3
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    NTE2361 2
    • 1 $2.38
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    NTE Electronics Inc NTE2367

    Transistor, bjt, npn,50V V(Br)Ceo,100Ma I(C),to-92Var |Nte Electronics NTE2367
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    Onlinecomponents.com NTE2367 3
    • 1 $0.852
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    Bristol Electronics NTE2367 2
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    NTE Electronics Inc NTE2363

    Transistor NPN Silicon 60V IC=2A General Purpose AMP/switch Coml To NTE2364
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    Onlinecomponents.com NTE2363 24
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    Bristol Electronics NTE2363 5 2
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    Quest Components NTE2363 314
    • 1 $3.2625
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    • 100 $1.6313
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    NTE2363 5
    • 1 $3.2625
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    NTE2363 4
    • 1 $4
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    NTE236 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE236 NTE Electronics Silicon NPN Transistor Final RF Power Output (P O = 16W, 27MHz, SSB) Original PDF
    NTE236 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Final RF Power Output, SSB, Pkg Style TO220 Scan PDF
    NTE2360 NTE Electronics Silicon Complementary Transistor Digital w /2 Built-In 47k Bias Resistor Original PDF
    NTE2361 NTE Electronics Silicon Complementary Transistor High Speed Switch Original PDF
    NTE2362 NTE Electronics Silicon Complementary Transistor High Speed Switch Original PDF
    NTE2363 NTE Electronics Silicon Complementary Transistor High Current General Purpose Amp / Switch Original PDF
    NTE2364 NTE Electronics Silicon Complementary Transistor High Current General Purpose Amp / Switch Original PDF
    NTE2365 NTE Electronics Silicon NPN Transistor High Voltage Horizontal Deflection Output Original PDF
    NTE2366 NTE Electronics Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) Original PDF
    NTE2367 NTE Electronics Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor Original PDF
    NTE2368 NTE Electronics Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor Original PDF
    NTE2369 NTE Electronics Silicon Complementary Transistor Digital w /2 Built-In 4.7k Bias Resistor Original PDF

    NTE236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nte2366

    Abstract: ic 339 NTE399
    Text: NTE2366 Silicon PNP Transistor High Voltage Video Amp Compl to NTE399 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V


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    PDF NTE2366 NTE399) 100mA nte2366 ic 339 NTE399

    27mhz rf ic

    Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


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    PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier

    Untitled

    Abstract: No abstract text available
    Text: NTE399 Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V


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    PDF NTE399 NTE2366)

    NTE2368

    Abstract: No abstract text available
    Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


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    PDF NTE2367 NTE2368 200mV, NTE2368

    NTE2365

    Abstract: npn 10a 800v NPN VCEO 800V transistor 800V 1A
    Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V


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    PDF NTE2365 100ns 100mA, NTE2365 npn 10a 800v NPN VCEO 800V transistor 800V 1A

    Untitled

    Abstract: No abstract text available
    Text: NTE2361 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.


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    PDF NTE2361 Freq300M

    Untitled

    Abstract: No abstract text available
    Text: NTE2362 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.


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    PDF NTE2362 Freq200M

    NPN Transistor TO92 40V 200mA

    Abstract: pnp to92 transistor pnp-npn NTE2367 NTE2368
    Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built−In 4.7k Bias Resistors Features: D Built−In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small−Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


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    PDF NTE2367 NTE2368 200mV, NPN Transistor TO92 40V 200mA pnp to92 transistor pnp-npn NTE2367 NTE2368

    ic 339

    Abstract: NTE399 "NPN Transistor" ic and equivalent NTE2366
    Text: NTE399 Silicon NPN Transistor High Voltage Video Amp Compl to NTE2366 Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V


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    PDF NTE399 NTE2366) 100mA ic 339 NTE399 "NPN Transistor" ic and equivalent NTE2366

    NTE2370

    Abstract: No abstract text available
    Text: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


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    PDF NTE2369 NTE2370 200mV, NTE2370

    Untitled

    Abstract: No abstract text available
    Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring


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    PDF NTE2363 NTE2364

    27mhz rf amplifier

    Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


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    PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor

    NTE2363

    Abstract: NTE2364
    Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring


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    PDF NTE2363 NTE2364 NTE2363 NTE2364

    NTE2364

    Abstract: NTE2363
    Text: NTE2363 NPN & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: D Low Saturation Voltage D Large Current Capacity and Wide ASO Applications: D Power Supplies D Relay Drivers D Lamp Drivers D Automotive Wiring


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    PDF NTE2363 NTE2364 NTE2364 NTE2363

    NTE2365

    Abstract: NPN VCEO 800V npn 10a 800v NPN 800V
    Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified


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    PDF NTE2365 100ns 100mA, NTE2365 NPN VCEO 800V npn 10a 800v NPN 800V

    NTE2365

    Abstract: npn 10a 800v NPN VCEO 800V
    Text: NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V


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    PDF NTE2365 100ns 100mA, NTE2365 npn 10a 800v NPN VCEO 800V

    NTE2359

    Abstract: NTE2360
    Text: NTE2359 NPN & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit


    Original
    PDF NTE2359 NTE2360 200mV, NTE2359 NTE2360

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


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    PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


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    PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Description and Application NTE TVpe Number Polarity and Material 2363 NPN-Si High 2364 PNP-Si High Current Gen Purp Amp/Sw Compì to NTE2363 2365 NPN-Si High Vltg, Horiz Defl Output, Sw, tf = 0.2|is 2367 NPN-Si 2368 Case Style Diag.


    OCR Scan
    PDF NTE2363) NTE2416) OT-23 NTE2419) NTE2418) NTE2364)

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


    OCR Scan
    PDF T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360

    "High Speed Switch"

    Abstract: TE 2383
    Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High


    OCR Scan
    PDF TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383