27LV010B Search Results

Contextual Info: Decem ber 1994 Semiconductor 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G

Contextual Info: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0.8p, CMOS split gate AMGtm

NM27LV010B

Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
Contextual Info: 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm 27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using

Contextual Info: 27LV010B S E M I C O N D U C T O R TM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s split gate AM G EPROM technology. This technology

Contextual Info: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

Contextual Info: a PRELIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

NM27LV010B

Contextual Info: D ecem ber 1994 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec­ trica lly Program m able Read O nly Memory. It is m anufac­ tured using N ational’s latest 0.8/j, C M OS split gate AMGtm

Contextual Info: a Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Fast Flashrite program m ing — Typical programm ing tim e of 16 seconds Single +3.3 V pow er supply — Regulated power supply 3.0 V -3 .6 V