27JUN2003 Search Results
27JUN2003 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS |
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M29W160ET M29W160EB | |
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10 s per Byte/Word typical 35 MEMORY BLOCKS |
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M29W160ET M29W160EB | |
856298Contextual Info: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation |
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27-Jun-2003 856298 | |
Contextual Info: Preliminary Data Sheet Part Number 856298 1220 MHz SAW Filter Features • • • • • • • • • For broadband access applications Usable bandwidth 10 MHz Low loss High attenuation No impedance matching required for operation at 200 Ω Balanced operation |
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27-Jun-2003 | |
IEC61360-4
Abstract: EIA-724
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M29W160ET M29W160EB TSOP48 IEC61360-4 EIA-724 | |
MTA-156
Abstract: awg 78001
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OCR Scan |
27JUN2003 MTA-156 awg 78001 | |
M29W160ET
Abstract: M29W160E M29W160EB TFBGA48 27-Nov-2002
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M29W160ET M29W160EB TSOP48 TFBGA48 M29W160ET M29W160E M29W160EB TFBGA48 27-Nov-2002 | |
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS |
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M29W160ET M29W160EB | |
Contextual Info: Preliminary Data Sheet Part Number 856331 836.5/881.5 MHz SAW Duplexer Features • • • • • • • • • • For AMPS, CDMA and TDMA applications Usable bandwidth 25 MHz each band High Tx-Rx isolation Low insertion loss High attenuation Single-ended operation |
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15x45° 27-Jun-2003 | |
114-18063
Abstract: 114-18063-1 114-18063-123 114-18063-12 PBT-GF 1-967642-1 MVQ30 DIN 16901-140 Tyco 967642
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OCR Scan |
20SEP2002 27JUN2003 20JUL2005 114-18063 114-18063-1 114-18063-123 114-18063-12 PBT-GF 1-967642-1 MVQ30 DIN 16901-140 Tyco 967642 | |
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY n SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read n ACCESS TIMES: 70, 90ns n PROGRAMMING TIME – 10 s per Byte/Word typical n 35 MEMORY BLOCKS |
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M29W160ET M29W160EB | |
9668e
Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
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SP3243 SP3243 084E03 059E03 000E03 SP3243EBEA_ MS1324 9668e SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633 | |
M29W160EB
Abstract: M29W160E M29W160ET TFBGA48 2aa 555
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M29W160ET M29W160EB M29W160EB M29W160E M29W160ET TFBGA48 2aa 555 | |
v23612
Abstract: V23612-A802-G76 PEEK
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OCR Scan |
01AUG2001 27JUN2003 05MAR2004 02MAR2001 5APR2001 3IMAR2000 v23612 V23612-A802-G76 PEEK | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST J LTR DWN DATE DESCRIPTION RELEASED FJD0-0230-03 04JUL03 R EVIS ED FJD 0-0235-03 07JUL03 - 1 :$ APVD N.S Y.K N.S Y.K |
OCR Scan |
FJD0-0230-03 04JUL03 07JUL03 UL157KIR] JUN03 27JUN2003 FJ040691 717457A 31MAR2000 |