27JUN11 Search Results
27JUN11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Si4776DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si4776DY AN609, 2708u 8749m 7206m 3269u 6989m 7808m 9944m 27-Jun-11 | |
Contextual Info: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C |
Original |
VS-UFB250FA60 OT-227 2002/95/EC VS-UFB250FA60 OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
VS-UFB250FA60Contextual Info: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C |
Original |
VS-UFB250FA60 OT-227 2002/95/EC VS-UFB250FA60 OT-227 11-Mar-11 | |
Contextual Info: SPICE Device Model SiS332DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
SiS332DN 11-Mar-11 | |
1.0213Contextual Info: Si8472DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si8472DB AN609, 6509u 6083u 3644m 2717u 9253u 2500m 1182m 27-Jun-11 1.0213 | |
Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
Original |
VSMY7850X01 VSMY7850X01 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
LCD-016O002FContextual Info: LCD-016O002F www.vishay.com Vishay 16 x 2 Character LCD FEATURES • Type: Character • Display format: 16 x 2 characters • Built-in controller: ST7032 • Duty cycle: 1/16 • Bias cycle: 1/5 ST7032 • + 5 V power supply • Compliant to RoHS Directive 2002/95/EC |
Original |
LCD-016O002F ST7032 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 LCD-016O002F | |
Contextual Info: JK1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
Original |
2002/95/EC 2002/96/EC TSOP34. TSOP32. TSOP34838JK1 27-Jun-11 | |
Contextual Info: SQM40P10-40L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQM40P10-40L AN609, 3391m 7367m 6174m 0266m 27-Jun-11 | |
VSMY7850X01
Abstract: VSMY7850X01-GS08
|
Original |
VSMY7850X01 VSMY7850X01 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VSMY7850X01-GS08 | |
Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
Original |
VSMY7850X01 VSMY7850X01 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
37931
Abstract: si88
|
Original |
Si8809EDB AN609, 7275u 0825m 3194m 1940u 7629u 7977m 0898m 27-Jun-11 37931 si88 | |
Contextual Info: SQM50P04-09L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQM50P04-09L AN609, 3391m 7367m 6174m 0266m 27-Jun-11 | |
63210Contextual Info: SPICE Device Model Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si3424CDV 11-Mar-11 63210 | |
|
|||
Contextual Info: JL1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
Original |
2002/95/EC 2002/96/EC TSOP34. TSOP32. TSOP32238JL1 27-Jun-11 | |
Contextual Info: SQS462EN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SQS462EN AN609, 0740m 2890u 3408m 7561u 8681m 4959m 2858u 27-Jun-11 | |
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL 2 P U B L IC A T IO N LOC D IS T R IG H TS AD 00 RESERVED. C O P Y R IG H T REVISIO N S D E S C R IP T IO N G2 1. OPERATING TEMPERATURE: 2. STORAGE 3. CONTACT TIMING: NON-SHORTING. 4. CONTACT |
OCR Scan |
27JUN11 20VDC. DEC01 DEC01 | |
Contextual Info: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based |
Original |
VSMY7850X01 VSMY7850X01 11-Mar-11 | |
si23Contextual Info: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
Si2324DS 11-Mar-11 si23 | |
Contextual Info: Si1023CX-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si1023CX-GE3 AN609, 1307u 4602u 1949m 1221m 27-Jun-11 | |
Contextual Info: Si2342DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si2342DS AN609, 7591u 5804m 8813m 6905u 6317m 4989m 7173m 27-Jun-11 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 60 MHz 10.0 VDC Lower Frequency: Upper Frequency: 110 Tuning Voltage: 0.5 MHz Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +5.0 +8.5 +12.0 dBm 25 mA Pushing: 0.5 MHz/V |
Original |
10kHz 100kHz CVCO55CL-0060-0110 27-Jun-11 | |
Contextual Info: JH1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902 |
Original |
2002/95/EC 2002/96/EC TSOP34. TSOP32. TSOP14838JH1 27-Jun-11 |