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5STP 27H1800 Abstract: 27H1200 27H1800 Text: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	27H1800 27H1800 27H1600 27H1200 67xVDRM CH-5600 5STP 27H1800
5STP27H1800 Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	27H1800 5SYA1048-02 27H1800 27H1600 27H1200 CH-5600 5STP27H1800
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 3000 A 4710 A 47000 A 0.88 V 0.103 mΩ Ω Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	27H1800 5SYA1048-02 27H1600 27H1200 CH-5600
Untitled Abstract: No abstract text available Text: VDSM = 1800 V ITAVM = 3000 A ITRMS = 4710 A ITSM = 47000 A VT0 = 0.88 V rT = 0.103 mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	27H1800 5SYA1048-02 27H1800 27H1600 27H1200 67xVDRM CH-5600