27C64-20 VPP 21 Search Results

Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES DIP/SOIC • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current Vpp [ I • 1 28 H V c c A12C 2 A7 C 3 27 26 □ NC

27C64 8k EPROM

Abstract: eprom 27c64 27C64 EPROM programmer 27C64-20 eprom 27c64 PROGRAMMER CIRCUIT MICROCHIP X-10 CODE 200B 27C64 27C64-12 27C64-15
Contextual Info: 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2

27C64

Abstract: eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Contextual Info: 27C64 64K 8K x 8 CMOS EPROM •1 2 3 4 5 6 7 8 9 10 11 12 13 14 27C64 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 26 27C64 9 25 22 13 21 A8 A9 A11 NC OE A10 CE O7 O6 20 23 12 19 24

27C64

Abstract: 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Contextual Info: Obsolete Device 27C64 64K 8K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2

Contextual Info: Obsolete Device 27C64 64K 8K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2

27C64 8k EPROM

Abstract: 27C64 27C64 microchip eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25
Contextual Info: 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2

27S12

Abstract: 27128 memory nsc600
Contextual Info: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and

intel 27c64

Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
Contextual Info: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current

ic 27c64

Abstract: i27c64 27c64
Contextual Info: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERS ICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V Fast access time — 45 ns ■ Low power consum ption High noise imm unity — 20 (iA typical CM O S standby ci rrent

27C64 8k EPROM

Abstract: ic 27c64 27c642
Contextual Info: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically

27c32

Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
Contextual Info: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming

Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C A7C A 6C A 5C A4C •1 2 3 4 5 6 A3C 7 A2Ü B A lC 9 A0 C 10 o o C 11 01C 12 02 £ 13 VesE 14 • C M O S Technology for low power consumption

Contextual Info: M $ 27C64 ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE • High speed performance DIP/SOIC - 120 ns access time available VppQ • 1 28 H Vcc A12C 2 • CMOS Technology for low power consumption 27 JPGM - 20 mA Active current A 7C 3 A 6C 4 26 13 n c

64150J

Contextual Info: CY27C64 ïj CYPRESS 8K x 8 EPROM Features • TTL-corapatible I/O • CMOS for optimum speed/power Functional Description • Windowed for reprogrammability • High speed — 70 ns commercial • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

Contextual Info: 27C64 & M icrochip 64K 8K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or

27c64-25

Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

27C64-120

Abstract: 27C64-70 27C64 CY27C64 CY7C266 27C6470 27C61 27C64-90
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

Fujitsu 27C64

Abstract: 27c64-30
Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

27C64 8k EPROM

Abstract: eprom 27c64 27C64 27C64-20 7258 P15 Package CY27C64 CY7C266 200JC
Contextual Info: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power

Contextual Info: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages

27C64-30

Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
Contextual Info: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS

40 pin eprom programmer circuit

Abstract: 27C257 eprom 27c64 PROGRAMMER CIRCUIT 27C64 EPROM programmer Motorola multimeter 27C64 8k EPROM introduction of eprom programmer 27c64 27c64 EEPROM eprom 27C512 free circuit eprom programmer
Contextual Info: MOTOROLA SEMICONDUCTOR USERS MANUAL M68HC705UGANG M68HC705UGANG Gang Programmer Users Manual This document contains information on products under development. Motorola reserves the right to change or discontinue these products without notice. !MOTOROLA MOTOROLA, INC., 2001

27C64MQ25

Abstract: 27C64MQB
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX_ 27C64 CMOS 65, 536 BIT 8192 x 8 UV ERASABLE PROM MEMORY DESCRIPTION Th e 27C 64 is a h ig h -s p e e d 6 4 K U V e ra s a b le and e le c tric a lly rep ro g ram m a b le EPR O M id e a lly suited