GSC6679
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE :2006/10/27C GSC6679 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 10m -14A Description The GSC6679 provide the designer with the best combination of fast switching, ruggedized device design, low
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2006/10/27C
GSC6679
GSC6679
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SUD50N02-12P
Abstract: No abstract text available
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c APPLICATIONS 0.026 @ VGS = 4.5 V 27c D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET
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SUD50N02-12P
O-252
S-31269--Rev.
16-Jun-03
SUD50N02-12P
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SUD50N02-12P
Abstract: No abstract text available
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
08-Apr-05
SUD50N02-12P
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SUD50N02-12P
Abstract: No abstract text available
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
S-41168--Rev.
14-Jun-04
SUD50N02-12P
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12p mosfet
Abstract: SUD50N02-12P
Text: SUD50N02-12P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 40c 0.026 @ VGS = 4.5 V 27c APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature
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SUD50N02-12P
O-252
SUD50N02-12P--E3
18-Jul-08
12p mosfet
SUD50N02-12P
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diode zener 27c
Abstract: 27c diode c5v1p 27C zener ZENER DIODE 27c diode 27c C18p zener 6v8p c6v8p c51p
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals
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BZD27C3V6P
BZD27C75P
OC/10
2002/95/EC
OD-123FL
MIL-STD-750
BZD27-C7V5P
BZD27-C75P)
diode zener 27c
27c diode
c5v1p
27C zener
ZENER DIODE 27c
diode 27c
C18p zener
6v8p
c6v8p
c51p
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diode zener 27c
Abstract: 27C zener zener 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)
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BZD27C3V6P
BZD27C75P
OD-123FL
OC/10
2002/95/EC
IEC61249
OD-123FL
MIL-STD-750
diode zener 27c
27C zener
zener 27c
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diode zener 27c
Abstract: zener 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE • Low profile surface-mount package 0.115 2.90 0.106(2.70) • Zener and surge current specification • Low leakage current 0.044(1.10) 0.031(0.80) • Sillicon Planar Zener Diode
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BZD27C3V6P
BZD27C75P
OC/10
2002/95/EC
OD-123FL
MIL-STD-750
Sym12
OD-123FL
diode zener 27c
zener 27c
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diode zener 27c
Abstract: 27c diode
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE • Low profile surface-mount package 0.115 2.90 0.106(2.70) 0.044(1.10) 0.031(0.80) • Sillicon Planar Zener Diode 0.075(1.90) 0.067(1.70) FEATURES • Zener and surge current specification
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BZD27C3V6P
BZD27C75P
OC/10
2011/65/EU
IEC61249
OD-123FL
MIL-STD-750
diode zener 27c
27c diode
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diode zener 27c
Abstract: 27c diode ZENER DIODE 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)
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BZD27C3V6P
BZD27C75P
OD-123FL
OC/10
2002/95/EC
IEC61249
diode zener 27c
27c diode
ZENER DIODE 27c
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diode zener 27c
Abstract: BZD27-C4V7P 27c diode 27C zener SOD-123FL c18p c51p zener BZD27-C5V1P C12PP diode 27c
Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)
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BZD27C3V6P
BZD27C75P
OD-123FL
OC/10
2002/95/EC
IEC61249
OD-123FL
MIL-STD-750
diode zener 27c
BZD27-C4V7P
27c diode
27C zener
SOD-123FL
c18p
c51p zener
BZD27-C5V1P
C12PP
diode 27c
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27C64A
Abstract: Philips FA 145 CIRCUIT79 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20 27c64ad-c
Text: OEC 2 R iwn Philips C o m po n en ts-S ign etics Document No. 853-0081 ECN No. 01039 Date of Issue November 12,1990 Status Product Specification 27C 64A 64K-bit CMOS EPROM 8K x 8 Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27C64A
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27C64A
64K-bit
536-bit
0382N/4WCR1/1290
Philips FA 145
CIRCUIT79
27C64A-12
27C64A-15
27C64A-20
27C64AI15
27C64AI20
27c64ad-c
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EPROM 64K x 16
Abstract: FF17 27C210 27C210-15 27C210-20 27C210I15N 27C210I20N 120NS 7013T
Text: Philips Components-Signetics D o c u m en t No. 853 -1 3 80 EC N No. 01043 Date o f Issue Novem ber 12, 1990 S tatus Product Specification 27C210 1 MEG CMOS EPROM 64K x 16 Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 210
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27C210
27C210
576-bit
85msec
75msec
EPROM 64K x 16
FF17
27C210-15
27C210-20
27C210I15N
27C210I20N
120NS
7013T
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27c512-20fa
Abstract: 27C512 27C512-12 AT 270512 27c512-15n 27C512-15FA eprom 27C512 28pin 27C512-1 27CS12-20 m 270512
Text: Philips Components-Signetics Document No. 8 53-1360 27C512 ECN No. 01042 51 2K -b it C M O S E P R O M 6 4 K x 8 Date of Issue Novem ber 12, 1990 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 512
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27C512
512K-bit
27c512-20fa
27C512-12
AT 270512
27c512-15n
27C512-15FA
eprom 27C512 28pin
27C512-1
27CS12-20
m 270512
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27C010 uv
Abstract: 27C010 27C010-12N 27C010-15FA 27C010-15N EPROM 27c010 27010 eprom 27C010-12
Text: Philips Components-Signetics 27C010 D ocum en t N o. EC N No. 1 MEG CMOS EPROM 128K x 8 Date o f Issue Novem ber 1990 S tatus Preliminary Specification Memory Products DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 010 • Low power consumption C M O S E P R O M is a 1,048,576-bit 5V
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27C010
27C010
576-bit
27C010 uv
27C010-12N
27C010-15FA
27C010-15N
EPROM 27c010
27010 eprom
27C010-12
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27C8111
Abstract: No abstract text available
Text: IVIX 27C 8111 8 M -B IT n M x 8 / 5 1 2 K x 1 6 ^ C M O MODE W ll FEATURES With Page Mode function, 8-word/16-byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 120/150 ns Page mode access time 60/75 ns Totally static operation
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8-word/16-byte
44-pin
MX27C8111
MX27C81nn
MX27C8111DC-12
DC-15
MX27C8111MC-12
MX27C8111MC-15
27C8111
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eprom 27c256 28 PIN DIP 150 NS
Abstract: 27C256DC eprom 27c256 27C256 Signetics 27c256 eprom 27c256 28 PIN DIP 120 NS 27C256-17 27C256-20FA 27C256I20 27C256 eprom
Text: Philips C o m p o n e n ts -S ig n etics 27C256 D ocum en t N o. 853 -0 0 94 ECN N o. 01040 Date o f Iss u e Novem ber 1 2 ,1 9 9 0 S tatus Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 256
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27C256
256K-bit
27C256
144-bit
85msec
75msec
eprom 27c256 28 PIN DIP 150 NS
27C256DC
eprom 27c256
Signetics 27c256
eprom 27c256 28 PIN DIP 120 NS
27C256-17
27C256-20FA
27C256I20
27C256 eprom
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27C240
Abstract: 2SA402 listec FF15 FF20 a6151 eprom 27C240 27C240-15 e1803
Text: Philips Components-Signetics 27C240 Document No. ECN No. 4 MEG CMOS EPROM 256K x 16 Date of Issue Novem ber 1990 Status Preliminary Specification Memory Products DESCRIPTION The 27C 2 4 0 C M O S E P R O M is a 4 ,1 9 4,30 4 bit 5 V read only memory organized as 2 6 2 ,1 4 4 words of 16 bits
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27C240
27C240
85msec
75msec
27C24C
2SA402
listec
FF15
FF20
a6151
eprom 27C240
27C240-15
e1803
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27C040
Abstract: No abstract text available
Text: Philips Components-Signetics 27C040 Document No. ECN No. 4 MEG CMOS EPROM 512K x 8 Date of Issue N ove m b e r 1990 Status O b je ctive S pecification M em ory Products DESCRIPTION FEATURES The 27C 0 4 0 C M O S EPR O M is a 4,1 9 4,30 4 bit 5 V read only m em ory
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27C040
27C040
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N27C128
Abstract: N27C128-200V05 27C128 INTEL 27c128 290127 27c128a
Text: INTEL CORP flEMORY/LOGIC SOE ]> • 4ö2bl7b 00fcjfci735 0 intel 27C 128 ~ r~ v z ~ / 3 ~ e s 1 2 8 K ( 1 6 K x 8 ) C H M O S P R O D U C T IO N A N D U V E R A S A B LE P R O M s ■ CHMOS Microcontroller and Microprocessor Compatible ■ High Performance
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00fcjfci735
28-Pin
32-Lead
27C128
27C128,
-250V05
-250V10
N27C128
N27C128-200V05
27C128 INTEL
290127
27c128a
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27c256-15
Abstract: 27C256-20
Text: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256
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27C256
256K-bit
27c256-15
27C256-20
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27C256
Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Text: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256
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27C256
256K-bit
144-bit
eprom 27c256 28 PIN DIP 150 NS
27C256-12 signetics
eprom 27c256 28 PIN DIP 150 NS j package
signetics 27C256
27c256 signetics
eprom 27c256 28 PIN DIP 120 NS
27C256DC
ti 27c256
27C256-12
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27C010-90
Abstract: No abstract text available
Text: CYPRESS Features • • • 128K x 8 CMOS EPROM Functional Description C M O S for optim um speed/pow er High speed — *aa = 70 n s m ax. Low power — 220 mW m ax. — Less than 85 mW when d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the
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CY27C010
CY27C010
32-Lead
600-Mil)
27C010-90
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Untitled
Abstract: No abstract text available
Text: MX27C2000 2M-BIT [256K x8] CMOS EPROM FEATURES • 256Kx 8 organization • Operating current:30mA • Single +5V power supply • Standby current: 100uA • +12.5V programming voltage • Package type: - 32 pin ceramic DIP, plastic DIP - 32 pin SOP - 32 pin PLCC
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MX27C2000
256Kx
100uA
MX27C2000
as256K
100uA
45/55ns
100ns
ar/16/1999
55ns/70ns
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