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    2750 2SK Search Results

    2750 2SK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2750GR-E2-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA2750GR-E1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA2750GR(0)-E2-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    UPA2750GR-E1-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    77313-127-50LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Header, 2.54 mm Pitch, Vertical, Double Row,Through Hole, 50 Positions Visit Amphenol Communications Solutions

    2750 2SK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2688-01L

    Abstract: mosfet power amplifier mosfet low vgs FUJI MOSFET
    Text: 2SK2688-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof T-Pack L T-Pack(S) Applications Switching regulators


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    PDF 2SK2688-01L mosfet power amplifier mosfet low vgs FUJI MOSFET

    2SK2689-01MR

    Abstract: transconductance mosfet mosfet power amplifier power mosfet POWER MOSFET CIRCUIT POWER MOSFET DATA BOOK mosfet low vgs
    Text: 2SK2689-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof TO-220F Applications Switching regulators DC-DC converters


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    PDF 2SK2689-01MR O-220F 2SK2689-01MR transconductance mosfet mosfet power amplifier power mosfet POWER MOSFET CIRCUIT POWER MOSFET DATA BOOK mosfet low vgs

    "Power MOSFET"

    Abstract: mosfet power amplifier 2SK2687-01 mosfet low vgs
    Text: 2SK2687-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters


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    PDF 2SK2687-01 O-220AB "Power MOSFET" mosfet power amplifier 2SK2687-01 mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: 2SK2687-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,01Ω ±50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2687-01

    k 2750 MOSFET

    Abstract: L027
    Text: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


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    PDF 2SK2688-01 277mH k 2750 MOSFET L027

    2SK2687-01

    Abstract: 12V 60w Motor
    Text: 2SK2687-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,01Ω ±50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2687-01 2SK2687-01 12V 60w Motor

    Untitled

    Abstract: No abstract text available
    Text: 2SK2689-01MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 40W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2689-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2687-01 N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2687-01 277mH,

    12V 60w Motor

    Abstract: No abstract text available
    Text: 2SK2688-01L,S N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2688-01L 277mH, 12V 60w Motor

    ups 017

    Abstract: 2SK2688-01
    Text: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


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    PDF 2SK2688-01 ups 017 2SK2688-01

    2SK2689-01MR

    Abstract: k 2750 MOSFET
    Text: 2SK2689-01MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0,01Ω 50A 40W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


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    PDF 2SK2689-01MR 2SK2689-01MR k 2750 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features


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    PDF 2SK1792 O-22QFL 100nA

    2SK1792

    Abstract: k 2750 transistor
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon N Channel M OSType l?-7t-MOS IV 10.3 M AX High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive


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    PDF 2SK1792 100nA 2SK1792 k 2750 transistor

    Untitled

    Abstract: No abstract text available
    Text: FU JI a iL H E ir iK â J E 2SK2688-01 L,S N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 1 & 50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


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    PDF 2SK2688-01

    Untitled

    Abstract: No abstract text available
    Text: FUJI 2SK2688-01L,S N-channel MOS-FET IS U jM O J llä U G FAP-IIIB Series 30V > Features - 0,0IQ 50 A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


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    PDF 2SK2688-01L 2SK2688-01

    2SK1653

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1653 100nA 20kii) 2SK1653

    2sk2689-01mr

    Abstract: B25A
    Text: FUJI tS T O Q Q E 2SK2689-01 MR N-channel MOS-FET FAP-IIIB Series 30V > Features - 0 ,0 I Q 50A 40W Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


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    PDF 2SK2689-01 277mH, 2sk2689-01mr B25A

    2SK1542

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 5 42 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4-Volt Gate Drive


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    PDF 2SK1542 2SK1542

    2SK1653

    Abstract: K1653
    Text: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2


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    PDF 2SK1653 2SK1653 K1653

    K1792

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.


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    PDF 2SK1792 O-22QFL K1792

    ISO 8015

    Abstract: KF 520 2SK2688-01 US50A
    Text: FUJI 2SK2688-01 L,S N-channel MOS-FET 30V 0,0 IQ 5 0 A 6 0 W FAP-IIIB Series > Features Outline Drawing - High Current - Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated T-PACK L T-PACK S 105 4.5 Ü -JL2. _08. > Applications -


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    PDF 2SK2688-01 277mH, 00D4bT0 ISO 8015 KF 520 US50A

    2SK2687-01

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2687-01 : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN, CHECKED V n o c T _ o _ n n / i- . i 1.Scope This specifies Fuji Power MOSFET 2SK2687-01


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    PDF 2SK2687-01 O-220 2SK2687-01

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2689-01MR N-channel MOS-FET s t y M E i T U G a jK FAP-IIIB Series 30V > Features 50A 40W > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated T O -2 2 0 F 1 5 > Applications 2.7 3» £


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    PDF 2SK2689-01MR

    2SK1653

    Abstract: 2sk16
    Text: TOSHIBA 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type L2-k-MOS IV 03.2 ± 0.2 10± 0.3 2.7 ± 0.2 High Speed, High Current DC-DC Converter, m Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive


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    PDF 2SK1653 2SK1653 2sk16