HCS12
Abstract: No abstract text available
Text: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.05 Original Release Date: 08-SEP-1999 Revised: March 7, 2001 Motorola Inc. Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or
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S12IICV2/D
HCS12
08-SEP-1999
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serial flash M25P10
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
serial flash M25P10
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AI04038
Abstract: No abstract text available
Text: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (512 Kbit) in 2 s (typical)
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M25P05
AI04038
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SB220
Abstract: SB230 SB240 SB250 SB260
Text: LITE-ON SEMICONDUCTOR SB220 thru SB260 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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SB220
SB260
DO-15
DO-15
SB240
SB250
300us
SB230
SB240
SB260
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AN1511
Abstract: M25P05 M25P05-A ST10
Text: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs as described in application note AN1511 .
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M25P05
M25P05-A
AN1511)
AN1511
M25P05
ST10
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AN1511
Abstract: M25P10 M25P10-A ST10 serial flash M25P10
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P10-A in all future designs as described in application note AN1511 .
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Original
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M25P10
M25P10-A
AN1511)
AN1511
M25P10
ST10
serial flash M25P10
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Untitled
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
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Untitled
Abstract: No abstract text available
Text: M25P05 512 Kbit, Low Voltage, Serial Paged Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Paged Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■
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M25P05
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SB220
Abstract: SB230 SB240 SB250 SB260
Text: LITE-ON SEMICONDUCTOR SB220 thru SB260 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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Original
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SB220
SB260
DO-15
DO-15
SB240
SB250
300us
SB230
SB240
SB260
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PDF
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M25P05
Abstract: ST10
Text: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (512 Kbit) in 2 s (typical)
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M25P05
M25P05
ST10
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serial flash M25P10
Abstract: M25P10 ST10
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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Original
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M25P10
M25P10
serial flash M25P10
ST10
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PDF
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Untitled
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Paged Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Paged Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
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bra spec sheet
Abstract: No abstract text available
Text: TH I S D R A W I NG IS UNPUBL I S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION FOR REV IS IO N S PUBLICATION ALL R IGHTS R E SE R V E D . LTR DESCRIPTION REVISED O DATE EC0-06-007820 06APR2006 DWN sw APVD CR CREW * - 7L O 5 H GREEN
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EC0-06-007820
06APR2006
26MAR
IMAR2000
bra spec sheet
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v23612
Abstract: No abstract text available
Text: 3 THIS C DRAWING IS RELEASED UNPUBLISHED. C O P Y R I G H T 2000 BY TYCO ELECTRONICS FOR C O R P O R A T I O N . AL L PUBLICATION RIGHTS 2000 LOC REV I S I O N S D 1ST QW RESERVED. L TR DESCRIPTION DATE DWN 05APR2001 APVD KM BL 32.5 MMMMMS i_n CX I co o
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05APR2001
V23612-A608-J41
26MAR2001
05APR2
3IMAR20
v23612
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