26 M1A Search Results

10Mohm LDR

Abstract: B156 CH-2074 EM6620
Contextual Info: EM6620 Table of Contents FEATURES _2 DESCRIPTION _2 TYPICAL APPLICATIONS _2 EM6620 AT A GLANCE _3 8.2 IRQ FROM MSC _ 26 8.3 MSC-MODES _ 27

Contextual Info: D-Subminiature connectors Solder pin straight high density Socket connector Plug connector Kat 1 i MOA Kat 1 i M1A A -0 .7 6 B - 0,25 C A -0 .7 6 B + 0,25 C D - 0,30 31,19 16,46 25,00 "o'il 15 31,19 16,79 25,00 +Do:;3 6,12 39,52 24,79 26 39,52 25,12 53,42

TC-131M-3A-94

Abstract: TC221
Contextual Info: W O U N D TOROIDS TC SERIES TC Series are inductors wound on Amidon #26 Iron Powder material toroids. Arnidon provides low volume hand windings to high volume automatic machine windings. Please call for the most competitive pricing, and delivery schedules.

29RD120

Abstract: 29RD100 SF2500EX21 29RD80 39RC40 11RC40 11rc80 SF1500GX21 21RC10 21RC60
Contextual Info: - 26 - Ä s s tt S Vrrm V drm Vr s m V SF1500EX24 SF15 0 0G 27 SF1500GX21 SF1500J27 SF1500L27 j s s * 2 SRIFnO Q97 SF15 0 0U2 7 j8 £ SF2500EX21 SF3000GX21 URSF05G49-1P * 2 (V) I tcavd Te CC) (A) 275 0 500 4 40 0 720 960 1 11; n 250 0 400 4 00 0 600 800

29RD100

Abstract: 29RD120 29RD80 29RD60 21RC60 11RC40 4a2d SF2500Ex21 11RC60 39RC20
Contextual Info: - 26 - Ä s s tt S Vr r m V d rm Vr s m V SF1 5 0 0 EX 2 4 js s SF1500G27 SF1500GX21 * 2 S F 1 5 0 0 J2 7 SF1 5 0 0 L2 7 SRIFnO Q 9 7 SF1500U 27 j8 £ SF2 5 0 0 EX 2 1 SF3000GX21 U R SF0 5 G 4 9 -1 P * 2 (V ) I tcavd Te CC) (A ) 2750 500 4400 720 960 1 11; n

Contextual Info: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna­ mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com MZ5913A - MZ5956A IATF 0113686 SGS TH07/1033 SILICON ZENER DIODES M1A VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation

T23N

Abstract: au1017 4100 dram HYS14400 IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

W41J

Abstract: IPC 4104
Contextual Info: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability

20c15

Abstract: FDS8936A LTC1628 140T3
Contextual Info: SPECIFICATION NOTICE DEMO MANUAL DC236 May 1999 Figure 2 of Demo Manual DC236 has been changed. Power MOSFETs M1a and M2b were incorrectly placed in the drawing and the corrected version of the Figure is shown below. , LTC and LT are registered trademarks of Linear Technology Corporation.

10EDA60

Contextual Info: Certificate TH97/10561QM 10EDA60 Certificate TW00/17276EM SILICON RECTIFIER DIODE M1A PRV : 600 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Glass passivated junction chip High Surge Capability Low Forward Voltage drop

RECTIFIER DIODES SGS

Contextual Info: TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 LMN1A - LMN1M GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere M1A FEATURES : * * * * * * Glass passivated junction chip High current capability High reliability Low reverse current

Contextual Info: MZ85C3V0-MZ85C200 Silicon Zener Diodes VZ : 3.0 - 200 Volts PD : 1.3 Watts Features — — — — — M1A Complete Voltage Range 3.0 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free 1.00 25.4 MIN. 0.085(2.16)

MZ85C200

Abstract: MZ85C3V0 MZ85C3V3 MZ85C3V6 MZ85C3V9 MZ85C4V3
Contextual Info: Certificate : TH97/10561QM MZ85C3V0~MZ85C200 SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 1.3 Watts FEATURES : * * * * * Certificate : TW00/17276EM 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) Complete Voltage Range 3.0 to 200 Volts High peak reverse power dissipation

Contextual Info: MZ55C3V0-MZ55C200 Silicon Zener Diodes VZ : 3.0 - 200 Volts PD : 500 mW M1A Features — — — — — — Complete 3.0 to 200 Volts High surge current capability High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free 0.085 2.16

MZ55C27

Abstract: MZ55C200 MZ55C3V0 MZ55C3V3 MZ55C3V6 MZ55C3V9 MZ55C4V3
Contextual Info: Certificate TH97/10561QM MZ55C3V0 ~ MZ55C200 Certificate TW00/17276EM SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 500 mW 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : * Complete 3.0 to 200 Volts * High surge current capability * High peak reverse power dissipation

MZ55B200

Abstract: MZ55B3V0 MZ55B3V3 MZ55B3V6 MZ55B3V9 MZ55B4V3
Contextual Info: Certificate TH97/10561QM MZ55B3V0 ~ MZ55B200 Certificate TW00/17276EM SILICON ZENER DIODES M1A VZ : 3.0 - 200 Volts PD : 500 mW 1.00 25.4 MIN. 0.085(2.16) 0.075(1.91) FEATURES : * Complete 3.0 to 200 Volts * High surge current capability * High peak reverse power dissipation

bosch servo module SM 10/20

Abstract: FA58 hd64f2635 21c16 LDC7 bc 547 557 LSI Message Passing Interface MPI specification Nippon capacitors 64F2630 HD6432634
Contextual Info: REJ09B0103-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2639, H8S/2638, H8S/2636,

PMM Bd-5701

Abstract: PowerPC Power ISA Architecture
Contextual Info: PowerPC 405EP Embedded Processor User’s Manual Preliminary SA14-2696-00  Preliminary First Preliminary Edition October 2002 This edition of the IBM PPC405EP Evaluation Board Kit User’s Manual applies to the IBM PPC405EP 32-bit embedded controller, until otherwise indicated in new versions or application notes.

Contextual Info: AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: v1.1 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power

A3P3000l

Abstract: IO270 A3P3000
Contextual Info: v1.0 ProASIC3L Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • Dramatic Reduction in Dynamic and Static Power Savings • 1.2 V / 1.5 V Core and I/O Voltage Support for Low Power • Low Power Consumption in Flash*Freeze Mode Allows for

ARMv6

Abstract: cortex a15 core Cortex-m1 Cortex R4 TRANSISTOR ww1 AES-128 FG256 FG484 T8 851
Contextual Info: v1.2 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power

Contextual Info: v1.3 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power