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    Abstract: No abstract text available
    Text: HYM594000A M-Series •H Y U N D A I 4M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22«F decoupling capacitor is mounted for each DRAM.


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    PDF HYM594000A HY5114100A HYM594000AM/ALM 1BC04-1I-FEB94 4L75DÃ 00D3324 25IMAX.

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532214A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532214Ais a 2M x 32-bit EDO mode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jFand 0.01 nF decoupling capacitors are mounted


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    PDF HYM532214A 32-bit 532214Ais HY5117804B HYM532214AE/ASLE/ATE/ASLTE HYM532214AEG/ASLEG/ATEG/ASLTEG 12S-/-0 OOS11DI* 25IMAX

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    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR H Y M 584000 Series 4M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 In 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.22pF decoupling capacitor Is mounted for each DRAM.


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    PDF HYM584000 HY514100 HYM584000M 1BC01-20-M 1BC01-20-MAY93 25iMAX. 1BCOI-20-MAY93