25F1B Search Results

2SC1815M

Abstract: 2SC1815 2SA1015
Contextual Info: TO SHIBA 2SA1015 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. • High Voltage and High Current. : V c e O - —50V (Min.), Ic = —150mA (Max.)

3rn1010

Abstract: RN1010 RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

2SC1815

Abstract: 2SC1815L 2SA1015L-O 2SA1015LO 2SC1815 GR 2SA1015
Contextual Info: 2SC1815 L 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) 2SC1815(L) ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

2SA1300

Contextual Info: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Contextual Info: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

2SC982TM

Contextual Info: 2SC982TM 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (ダーリントン接続) 2SC982TM ○ プリンタードライブ, コアドライブ, LED ドライブ用 ○ 低周波増幅用 • 単位: mm 直流電流増幅率が高い。: hFE (1) = 5000 (最小) (IC = 10 mA)

2SC3279

Contextual Info: 2SC3279 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3279 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線性が良好です。 : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (最小), 200 (標準) (VCE = 1 V, IC = 2 A)

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。

2SA1091

Abstract: 2SC2551 SC43
Contextual Info: 2SC2551 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2551 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC1815

Abstract: 2SA1015L 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA

2SA1300

Contextual Info: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)

2SC752

Abstract: 2sc752 equivalent 2SC752G-TM 2sC752 transistor
Contextual Info: 2SC752 G TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max)

Contextual Info: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)

Contextual Info: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)

Contextual Info: 2SC2551 TO SHIBA 2SC2551 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGHT VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS . 5.1 M AX.

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

RN2007

Abstract: RN2009 RN1007 RN1009 RN2008
Contextual Info: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

Contextual Info: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V

Contextual Info: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA RN1001 ~RN1006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating