L350FC
Abstract: L350FCHC L350FCQC
Text: American Opto Plus LED MAIN FEATURES: FULL COLOR SMD PRODUCT L-350XC series… WIDE VIEWING AGNLE LOW POWER CONSUMPTION Common ANODE Full Color I.C. COMPATIBLE 3.2X2.7X1.1mm CHIP LED Tape & Reel PACKAGE DIMENSIONS SELECTION GUIDE AND APPLICATION INFORMATION RATINGS AT 25deg.C AMBIENT
|
Original
|
PDF
|
L-350XC
25deg
L350FCHC
L350FCQC
L350FC
L350FC
L350FCHC
L350FCQC
|
IMD3
Abstract: 100DEG M67766B
Text: M67766B IMD3,5,7 vs. Po IMD3 +25deg.C IMD5(+25deg.C) IMD7(+25deg.C) IMD3(-30deg.C) IMD5(-30deg.C) IMD7(-30deg.C) IMD3(+100deg.C) IMD5(+100deg.C) IMD7(+100deg.C) -5 -10 -15 IMD (dBc) -20 -25 -30 -35 -40
|
Original
|
PDF
|
M67766B
824MHz
50ohms
25deg
-30deg
IMD3
100DEG
|
NLK1U5FAAA
Abstract: nel nlk1u5faaa
Text: NEL Laser Diodes May2005 NLK1U5FAAA 1650 nm DFB laser diode in a butterfly-type 14 pin package with thermo-electric cooler. Pigtail fiber is connectorized with an FC/PC connector. FEATURES * Wavelength Range * Fiber Output Power 1650nm 15mW ABSOLUTE MAXIMUM RATINGS Tsub=25deg.C
|
Original
|
PDF
|
May2005
1650nm
25deg
NLK1U5FAAA
nel nlk1u5faaa
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5190 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE
|
Original
|
PDF
|
1C5190
100-500ns)
25deg
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5186 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 100 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE
|
Original
|
PDF
|
1C5186
100-500ns)
25deg
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5187 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 200 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE
|
Original
|
PDF
|
1C5187
100-500ns)
25deg
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5188 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO 3.0 @25deg.C Amps MAX JUNCTION TEMPERATURE
|
Original
|
PDF
|
1C5188
100-500ns)
25deg
|
icc3
Abstract: M57788SH 3125V m577
Text: Graph f-Po M57788SH Pout,Icc vs. freq. 12 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm 50 Po W Icc1 (A) Icc2 (A) Icc3 (A) Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 2 10 1 460 470 480 490 500 freq.(MHz) -1- 510 520 530 540 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)
|
Original
|
PDF
|
M57788SH
25deg
50ohm
490MHz
500MHz
icc3
3125V
m577
|
CGR18650CG
Abstract: Panasonic CGR18650CG CGR18650C CGR18650 110mA 250mah panasonic lithium battery cell 3.6V
Text: PSS series CGR18650CG • Dimensions ■ Typical discharge characteristics （mm） Max. 18.6 5.0 CHARGE CONDITION :CVCC 4.2V MAX.0.7It 1500mA , 110mA cut-off at 25deg.C DISCHARGE CONDITION : CONSTANT CURRENT , 3.0V cut-off at 25deg.C VOLTAGE [V] 4.5 （＋）
|
Original
|
PDF
|
CGR18650CG
1500mA)
110mA
25deg
4300mA)
2150mA)
430mA)
CGR18650CG
Panasonic CGR18650CG
CGR18650C
CGR18650
250mah
panasonic lithium battery cell 3.6V
|
peltier
Abstract: vdr10
Text: NEL Laser Diodes July2005 NLK1B5JAAA 1310 nm DFB laser diode in a butterfly-type 14 pin package with thermo-electric cooler. Pigtail fiber is connectorized with an FC/PC connector. FEATURES * Wavelength Range * Fiber Output Power 1310 nm 40mW ABSOLUTE MAXIMUM RATINGS Tsub=25deg.C
|
Original
|
PDF
|
July2005
25deg
peltier
vdr10
|
MDR081B
Abstract: No abstract text available
Text: MDR081B 1.2GHz DSTV 1st IF BPF Characteristics MDR081B Zin/Zout 50 ohm Nominal Fc 1200MHz Nominal Pass Band 950-1450MHz Insertion Loss 2.0 dB max 950-1450MHz at 25 Deg.C 2.3 dB max (950-1450MHz at -40 up to +85 Deg.C) Ripple 1.5 dB max (950-1450MHz at +25Deg.C)
|
Original
|
PDF
|
MDR081B
1200MHz
950-1450MHz
25Deg
950-1450MHz)
1650-2150MHz)
MDR081B
|
L650CBC
Abstract: L650CGC L650NBC L650NGC L650UDC L650UROC L650USDC L650UYGC
Text: L- American Opto Plus LED 650XC series… 3.2x1.6x1.5mm CHIP LED Tape & Reel MAIN FEATURES: !" ULTRA BRIGHT SMD PRODUCT !" WIDE VIEWING AGNLE !" LOW POWER CONSUMPTION !" I.C. COMPATIBLE !" ULTRA BRIGHT TYPS SMD 0603 PACKAGE PACKAGE DIMENSIONS SELECTION GUIDE AND APPLICATION INFORMATION RATINGS AT 25deg.C AMBIENT
|
Original
|
PDF
|
650XC
25deg
L650UYGC
L650UYC
L650UDC
L650USDC
L650UROC
1/16inch)
L650CBC
L650CGC
L650NBC
L650NGC
L650UDC
L650UROC
L650USDC
L650UYGC
|
icc3
Abstract: M57788UH 3125V M5778 M57788
Text: Graph f-Po M57788UH Pout,Icc vs. freq. 12 Po W Icc1 (A) Icc2 (A) Icc3 (A) 50 Vcc1,2,3=12.5V, Pin=0.3W, Tc=+25deg.C Zg=Zl=50ohm Pout (W) 40 11 10 9 8 7 30 6 5 20 4 3 10 2 1 440 450 460 470 480 freq.(MHz) -1- 490 500 510 520 Icc1/Icc2/Icc3 (A) 60 Graph Pin-Po(fL)
|
Original
|
PDF
|
M57788UH
25deg
50ohm
470MHz
480MHz
icc3
3125V
M5778
M57788
|
C0416137
Abstract: No abstract text available
Text: C0416137 FEATURES INCLUDE: Conductive Plastic Element Shaft Seal SPECIFICATIONS TA = 25deg.C unless otherwise stated Electrical Resistance Value Tolerance Independent Linearity Error Power Dissipation Effective Rotation Angle 5K +/-10% +/-5% 1 W max. 45 deg.+/-5deg.
|
Original
|
PDF
|
C0416137
25deg
-40deg
120deg.
C0416137
|
|
|
Untitled
Abstract: No abstract text available
Text: ECG738 Linear ICs Chroma Processor Circuit status Nom. Supp V 20 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)75 Package StyleDIP Mounting StyleT Pinout Equivalence Code14-1024 # Pins14 Ckt. (Pinout) NumberLN01401024 DescriptionPd:625mW;Derate:5mW/deg.C above TA=+25Deg.C
|
Original
|
PDF
|
ECG738
Code14-1024
Pins14
NumberLN01401024
625mW
25Deg
|
LBWA1
Abstract: LBWA1ZZVK7-539 cc3000 WLAN ieee 802.11 murata
Text: Preliminary Specification Number : SP-ZZVK-C W-LAN Module Data Sheet 802.11b/g module Product Part Number: LBWA1ZZVK7-539 Preliminary & Confidential < Specification may be changed by Murata without notice > Murata Manufacturing Co., Ltd. Preliminary Specification Number: SP-ZZVK-C
|
Original
|
PDF
|
11b/g
LBWA1ZZVK7-539
LBWA1
LBWA1ZZVK7-539
cc3000
WLAN ieee 802.11
murata
|
flammable
Abstract: RA45H4045MR
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF POWER MODULE Revision date: 22nd/Jan. ‘02 ELETROSTATIC SENSITIVE DEVICES R A 45H 4045M R Silicon MOS FET Power Amplifier, 400-450MHz 45W MOBILE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED
|
OCR Scan
|
PDF
|
22nd/Jan.
RA45H4045MR
400-450MHz
25deg
50ohm
flammable
RA45H4045MR
|
RA03M8087M
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA03M8087M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 806-870MHz 3.6W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS
|
OCR Scan
|
PDF
|
RA03M8087M
806-870MHz
25deg
50ohm
ZI-50ohm
806-870MHz1Zg
50ohm,
RA03M8087M
|
RA07M4045M
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M4045M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE RADIO MAXIMUM RATINGS SYMBOL V dd Vgg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)
|
OCR Scan
|
PDF
|
RA07M4045M
400-450MHz
50ohm
ZI-50ohm
f-400-450MHz
ZH50Qhm
RA07M4045M
|
RA08H1317M
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POW ER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE RA08H1317M DEVICES Silicon MOS FET Power Amplifier, 135-175MHz 8W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS SUPPLY VOLTAGE
|
OCR Scan
|
PDF
|
17th/Jan.
RA08H1317M
135-175MHz
25deg
Zg-ZI-50ohm
50ohm
35-175MHz
RA08H1317M
|
Untitled
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR H ANDLING ELETROSTATIC SENSITIVE DEVICES RA20H8087M Silicon MOS FET Power Am plifier 806-825 I 851-870MHz 20W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)
|
OCR Scan
|
PDF
|
RA20H8087M
851-870MHz
25deg
50ohm
806-825/851-870MHz
|
f240l
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H2127M Silicon MOS FET Power Amplifier, 210-270MHz 30W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)
|
OCR Scan
|
PDF
|
RA30H2127M
210-270MHz
25deg
50ohm
f240l
|
flammable
Abstract: RA08N1317M
Text: ATTENTION MITSUBISHI RF POW ER M ODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE RA08N1317M DEVICES Silicon MOS FET Power Amplifier, 135-175MHz 8W PORTABLE RADIO MAXIMUM RATINGS SYM BO L V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C U N LESS OTH ERW ISE NOTED)
|
OCR Scan
|
PDF
|
RA08N1317M
135-175MHz
25deg
50ohm
50ohim
f-135-175MHz
35-175MHz
flammable
RA08N1317M
|
RA35H1516M
Abstract: No abstract text available
Text: ATTENTION MITSUBISHI RF POWER MODULE O BSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA35H1516M Silicon MOS FET Power Amplifier, 154-162MHz 35W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)
|
OCR Scan
|
PDF
|
RA35H1516M
154-162MHz
25deg
50ohm
54-162MHz
RA35H1516M
|
