25APR05 Search Results
25APR05 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NF-28
Abstract: EX-AR400 BZ-2R244-P1 Nf28
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OCR Scan |
C095517 25APR05 EX-AR400 REPLACEMENT---BZ-2R244-PE NF-28 EX-AR400 BZ-2R244-P1 Nf28 | |
4586-1
Abstract: 4586-97A 36DY 36DY105F6R3DD2A 36DY124F6R3AB2A 36DY224F6R3BB2A 36DY564F6R3BF2A 36DY683F6R3AA2A 36DY823F010AB2A 36DY824F6R3CF2A
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25-Apr-05 4586-1 4586-97A 36DY 36DY105F6R3DD2A 36DY124F6R3AB2A 36DY224F6R3BB2A 36DY564F6R3BF2A 36DY683F6R3AA2A 36DY823F010AB2A 36DY824F6R3CF2A | |
SFH6721TContextual Info: SFH6720T/ SFH6721T Vishay Semiconductors High Speed Optocoupler, 5 MBd, in SOIC-8 Package Features • • • • • Data Rate 5.0 Mb/s 2.5 Mb/s over Temperature Buffer Isolation Test Voltage, 3000 VRMS for 1.0 s e3 TTL, LSTTL and CMOS Compatible Internal Shield for Very High Common Mode |
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SFH6720T/ SFH6721T 2002/95/EC 2002/96/EC i179074 UL1577, E52744 VDE0884) 08-Apr-05 SFH6721T | |
Contextual Info: TH 1S D R A W 1 NG C 1S COPYRIGHT U N P U B L 1S H E D . RELEAS ED BY 19 AMP 1NCORPORATED. FOR ALL P U B L 1C A T 1 ON R IGHTS ,19 REV I S I O N S RESERVED. LTR D E S C R I P T I ON RELEASED DIM PER DATE 0205-05 DWN APVD CJ 25-APR-05 W±0 . 3 9 MA T E R I AL |
OCR Scan |
25-APR-05 54jjm 090C72000 7-APR-200 09MAY94 | |
3608QContextual Info: T H 1S DRAW A NG 1S COPYRIGHT U N P U B L 1S H E D . RELEAS ED 19 BY AMP FOR PUB LIC A TION ALL 1NCORPORATED. RIGHTS ,19 REV I SI ONS RESERVED. LTR D E S C R I P T I ON DATE R E V I S E D PER 0 G 3 B - 0 2 0 5 - 0 5 DWN APVD CJ 25-APR-05 D I M W ± Q . 39 |
OCR Scan |
0G3B-0205-05 25-APR-05 090CT2 17-APR-2001 7-APR-200 09MAY94 3608Q | |
SI7447ADPContextual Info: Si7447ADP Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a Qg (Typ) −30 0.0065 @ VGS = −10 V −35 100 nC S 1 2 Product Is Completely Pb-free APPLICATIONS PowerPAK SO-8 6.15 mm D TrenchFETr Power MOSFETS |
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Si7447ADP 07-mm Si7447ADP-T1--E3 S-50830--Rev. 25-Apr-05 | |
Contextual Info: Si7866ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 20 (A)a 0.0024 @ VGS = 10 V 40 0.0030 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 39 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized |
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Si7866ADP Si7866ADP-T1--E3 08-Apr-05 | |
10-32 UNF 2 A
Abstract: 10-32 UNF EX-AR420
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PR-5939 CO73019 25APR05 EX-AR420 REPLACEMENT-BZ-2R244-PI A-125. IO-32UNF 10-32 UNF 2 A 10-32 UNF EX-AR420 | |
36DY332F200CB2A
Abstract: Vishay cap
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08-Apr-05 36DY332F200CB2A Vishay cap | |
Contextual Info: TH I S DRAW I NG IS UNPUBL I S H E D . BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATIO N ALL FOR 20 P I J B L I C A T I ON RIGHTS RE V I S I ONS RESERVED. DESCRIPTION REVISED MATER CONTACTS - BRASS. HOUSING - UL 9 4 V - 0 RATED HI GH PER 0 G 3 B - 0 2 0 8 - 0 5 |
OCR Scan |
0g3b-0208-05 25APR05 38jjm RECOMMPNDED00 3IMAR2000 | |
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. C REF D 4.88 [.192] h- A SPACES 2.54 = [.100] 1.17 + 0.08 [.046 + .003] B .6 4 + 0 .0 3 [.025 + . 0 0 1] TYP A A A A A A A A> 0.38 |
OCR Scan |
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G2SBA60Contextual Info: G2SBA20, G2SBA60 & G2SBA80 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics C ase Type G B L IF AV 1.5 A VRRM 200 V, 600 V, 800 V IFSM 60 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ ~ Features Typical Applications |
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G2SBA20, G2SBA60 G2SBA80 E54214 J-STD-020C UL-94V-0 25-Apr-05 G2SBA60 | |
Contextual Info: G2SB20, G2SB60 & G2SB80 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics C ase Type G B L IF AV 1.5 A VRRM 200 V, 600 V, 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C ~ ~ ~ ~ Features Typical Applications |
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G2SB20, G2SB60 G2SB80 E54214 J-STD-020C UL-94V-0 25-Apr-05 | |
GR-253-CORE
Abstract: VS-550 VS-550-LFF-GNN
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VS-550 10GbE OC-192 GR-253-CORE VS-550 devic-888-FAX-VECTRON 1-88-VECTRON-1 25Apr05 VS-550-LFF-GNN | |
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2293D
Abstract: 293D
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QC300801/US0001 535BAAC. EIA-481-1. 25-Apr-05 2293D 293D | |
SFH6721T
Abstract: 1N916 SFH6720T VDE0884 SFH6721
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SFH6720T/ SFH6721T 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) i179074 D-74025 25-Apr-05 SFH6721T 1N916 SFH6720T VDE0884 SFH6721 | |
Contextual Info: Si7868ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 (A)a ID rDS(on) (W) 0.00225 @ VGS = 10 V 40 0.00275 @ VGS = 4.5 V 40 D D D D D Qg (Typ) 46 nC TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized |
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Si7868ADP Si7868ADP-T1--E3 08-Apr-05 | |
Diode RL 4B
Abstract: Si7866ADP SI7866ADP-T1-E3
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Si7866ADP Si7866ADP-T1--E3 S-50831--Rev. 25-Apr-05 Diode RL 4B SI7866ADP-T1-E3 | |
Diode RL 4B
Abstract: mosfet 0018 Si7868ADP
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Si7868ADP Si7868ADP-T1--E3 S-50832--Rev. 25-Apr-05 Diode RL 4B mosfet 0018 | |
IEC-801-2 ESD
Abstract: LCP-100 blh LCP-100 LCP-10 modbus-rtu BLH alpha VISHAY VT 300 WEIGHT INDICATOR EN50082-1 web Tension control system
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LCp-100 RS-422/485 08-Apr-05 IEC-801-2 ESD LCP-100 blh LCP-10 modbus-rtu BLH alpha VISHAY VT 300 WEIGHT INDICATOR EN50082-1 web Tension control system | |
Contextual Info: 1N5400G THRU 1N5408G GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A FEATURE DO - 201AD Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension |
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1N5400G 1N5408G 201AD /10sec/0 UL-94 25-Apr-05 | |
SI7447ADPContextual Info: Si7447ADP Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a Qg (Typ) −30 0.0065 @ VGS = −10 V −35 100 nC S 1 2 Product Is Completely Pb-free APPLICATIONS PowerPAK SO-8 6.15 mm D TrenchFETr Power MOSFETS |
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Si7447ADP 07-mm Si7447ADP-T1--E3 08-Apr-05 |