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    256K X 16 Search Results

    256K X 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    AM27C256-55DC Rochester Electronics LLC AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics LLC Buy
    MD27C256-20/B Rochester Electronics LLC 27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics LLC Buy
    MR27C256-25/B Rochester Electronics LLC 27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C256-55DI Rochester Electronics LLC AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics LLC Buy

    256K X 16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pd 3174

    Abstract: ACS35
    Text: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


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    28-pin 600mW IDT7187 IDT7MP156 200mV 7MP156 256Kx pd 3174 ACS35 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage


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    MX27L4100/27L4096 8/256K MX27L4096, MX27L4100, MX27L4100/4096 MX27L4096) PDF

    GI9332

    Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
    Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8


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    MB83256 MB83512 MB831000 MB832000 MB834100 MB834000 MB834200 27C1024H 27C101A 27C301A GI9332 mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000 PDF

    27C4100

    Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) singP14 FEB/25/2000 27C4100 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q PDF

    27C4096

    Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) sing13/1997 FEB/25/2000 27C4096 EPROM sop 40 MX27C4096 MX27C4100 27c4100 PDF

    00C2H

    Abstract: No abstract text available
    Text: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns


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    MX27C4100/27C4096 8/256K MX27C4096, MX27C4100, 100uA MX27C4100/4096 MX27C4096) MX27C4100) PM0197 FEB/25/2000 00C2H PDF

    5v rs232 UART interface

    Abstract: db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM RS530 xcvr 256K X 16
    Text: Am186TMCC/CH/CU Customer Development Platform Main Board Memory Interface Expansion Interface 256K x 16 SRAM SRAM/ICE Socket Am186 Expansion Bank 1 256K x 16 DRAM SRAM/ICE Socket Bank 0 256K x 16 DRAM 1 MByte Flash Memory Am186 Expansion Development Module


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    Am186TMCC/CH/CU Am186 RS422 RS530 160-PQFP 5v rs232 UART interface db9 rs232 socket RS232 DB9 DB9 rs232 5V RS422 USB db25 usb 16-DRAM xcvr 256K X 16 PDF

    Untitled

    Abstract: No abstract text available
    Text: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IB M 0418 A8 AC LAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations


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    IBM0418A4ACLAA IBM0436A8ACLAA IBM0436A4ACLAA A14-4662-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation


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    GDDS311 V104J8/9 104J8/9 30-lead b3533Tl PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology. Inc 4 M EG ABIT 256K x 16 C M O S STATIC RAM M O DULE INFOrm ™ n i d t 7M4016 FEATURES: DESCRIPTION: • High-denslty 4 megabit (256K x 16) CMOS static RAM module • Low power consumption • Utilizes 16 IDT71257 high-performance 256K x 1 CMOS static


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    7M4016 IDT71257 48-pin, IDT7M624 1024K DSC-7009/- IDT7M4016 PDF

    "Video RAM"

    Abstract: KM4216V256 KM4216C256
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.


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    4216C/V256 110ns 130ns 150ns KM4216C256 120mA 110mA 100mA KM4216V256 "Video RAM" PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 9 Megabit CMOS SRAM DPS256X36L PRELIM INARY DESCRIPTION: The DPS256X36L is a 256K X 36 high-density, low-power static RAM module comprised of eight 256K X 4 and four 256K x 1 monolithic SRAM's and decoupling capacitors surface mounted on a FR-4


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    DPS256X36L DPS256X36L 512Kx 256Kx36 500mV 30A112-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 256K, 512K x 32 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View OPTIONS 72-Pin SIMM (DD-5) 256K x 32 (DD-6) 512K x 32 o imïïïïirrffrrmmy^^ 1 PIN#


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    MT2D25632, MT4D51232 72-Pin 41ucts PDF

    A67L7332

    Abstract: A67L7336 A67L8316 A67L8318
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary LVTTL, Pipelined DBA SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue


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    A67L8316/A67L8318/ A67L7332/A67L7336 100MHz) A67L7332 A67L7336 A67L8316 A67L8318 PDF

    A67L73321

    Abstract: A67L73361 A67L83161 A67L83181
    Text: A67L83161/A67L83181/ A67L73321/A67L73361 Series 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBATM SRAM Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBATM SRAM Revision History Rev. No. 0.0 0.1 History Issue Date Remark Initial issue


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    A67L83161/A67L83181/ A67L73321/A67L73361 A67L73321 A67L73361 A67L83161 A67L83181 PDF

    Untitled

    Abstract: No abstract text available
    Text: A29L400B Series 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Document Title 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark


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    A29L400B 48TFBGA) PDF

    Untitled

    Abstract: No abstract text available
    Text: A29400A Series 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Preliminary Boot Sector Flash Memory Document Title 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark


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    A29400A PDF

    A23L8308

    Abstract: A23L83161 A23L83161V A23L8316M A23L8316R A23L8316V
    Text: A23L8316/A23L83161 Series Preliminary 256K X 16 / 512K X 8 BIT CMOS MASK ROM Document Title 256K X 16 / 512K X 8 BIT CMOS MASK ROM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 28, 2004 Preliminary July, 2004, Version 0.0


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    A23L8316/A23L83161 A23L83161) 40-pin 32-pin 48-pin A23L8308 A23L83161 A23L83161V A23L8316M A23L8316R A23L8316V PDF

    A67L7332

    Abstract: A67L7336 A67L8316 A67L8318
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBATM SRAM Preliminary Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 11, 1999


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    A67L8316/A67L8318/ A67L7332/A67L7336 117/100/83MHz) Bu860 A67L7332 A67L7336 A67L8316 A67L8318 PDF

    015161LJ3A-50

    Abstract: IBM015160256 IBM015161256
    Text: IBM015160256 x 16FP, 2WE. IBM015161256 x 16EDO, 2WE. IBM015160 IBM015161 256K X 16 DRAM Features • 256K x 16 DRAM • 66MHz EDO performance • Performance: • Non-Persistent WPBM mode Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CE


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    IBM015160256 IBM015161256 16EDO, IBM015160 IBM015161 66MHz 110ns SOJ-40 015161LJ3A-50 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT28F400B1 256K x 16, 512K x 8 FLASH MEMORY MICRON M QUANTUM DEVICES, INC. FLASH MEMORY 256K x 16, 512K x 8 S martV oltage , BOOT BLOCK FEATURES • Seven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks


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    MT28F400B1 16KB/8K-word 100ns 110ns, 150ns 48-PIN MT2BF400B1 PDF

    MX23C2100

    Abstract: No abstract text available
    Text: Introduction Selection Guide MX23C2100 2M-BIT 256K x 8/128K x 16 CMOS MASK ROM FEATURES • • • • • Switchable organization - 256K x 8(byte mode) - 128K x 16(word mode) • Single +5V power supply • Fast access time: 150/200ns • Totally static operation


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    MX23C2100 8/128K 150/200ns MX23C2100 CA95131 PDF

    IBM0418A8ACLAB

    Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
    Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


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    IBM0418A4ACLAB IBM0436A8ACLAB IBM0418A8ACLAB IBM0436A4ACLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlh3320 IBM0418A8ACLAB IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB PDF

    IBM0418A41XLAB

    Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
    Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


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    IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrh2516 IBM0418A41XLAB IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB PDF