IDT71257 Search Results

Contextual Info: Integrated Device Technology. Inc 4 M EG ABIT 256K x 16 C M O S STATIC RAM M O DULE INFOrm ™ n i d t 7M4016 FEATURES: DESCRIPTION: • High-denslty 4 megabit (256K x 16) CMOS static RAM module • Low power consumption • Utilizes 16 IDT71257 high-performance 256K x 1 CMOS static

7C197

Contextual Info: Data Sheet February 1992 , H &t Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and CY7C197 ■ Automatic powerdown during long cycles

idt71257

Contextual Info: y CMOS STATIC RAM 256K 256K x 1-BIT Integrated Device TechnokDgy. Inc PRELIMINARY IDT 71257S IDT 71257L FEA TU R ES: DESCRIPTION: • H ig h -sp e e d (equal a c c e s s a n d c y c le time) T h e IDT71257 is a 262,144-blt h ig h -s p e e d sta tic R A M org an ize d

IDT71257

Contextual Info: Jdf CMOS STATIC RAM 256K 256K x 1-BIT) Integrated DeviceTechnology Inc PRELIMINARY IDT 71257S IDT 71257L FEATURES: DESCRIPTION: • T h e IDT71257 Is a 262,14 4-b lt h ig h -s p e e d sta tic RAM organized as 256K x 1. It Is fa b ric a te d u sin g ID T 's hig h -p erform a n ce, hlgh-rella b lllty C E M O S te c h n o lo g y . T h is state-of-the-art te chnology,

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: Data Sheet January 1992 Ü ^ A T & T Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O Features Low-power operation — Active: 210 mW typical at 45 ns — Standby: 500 nW typical • High speed— 12 ns maximum access times

Contextual Info: L7C197 *- — • — - - L7 C 1 0 7 256K x 1 Static RAM JbVUI-S ■ : XJHHO -■A I h □ 256K x 1 Static RAM with Separate 1 /0 , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

c4001

Contextual Info: 1 MEGABIT 1024K x 1-BIT (%AOS STATIC RAM ! In to n a te d Devic e Technology Inc p r e l im in a r y IDT7MC4001 SIP MODULE FEATURES: DESCRIPTION: • H ig h -d en sity 1 m eg ab it (1024K x 1) C M O S static R A M m o d u le T h e ID T7M C4001 Is a 1 m eg a b it (1024K x 1-bit) high-speed

CY7C197

Abstract: IDT71257 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

24PIN

Abstract: CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001
Contextual Info: - 106 2 5 6 K m t, tt £ ïSKiÊSl CC X TAAC max ns) TCAC max (ns) CMOS 4 7 TOE max (ns) TOH (ns) / f TOD max (ns) S t a t i c RAM (2 6 2 14 4 x 1 ) 7' i l t t TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) ma ÏÏI3X (ns i V D D or V C C (V) 2 4 P I N

lt88

Abstract: EDI81256C45QB
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm L7C197 •!—mmmm MMMM 256K x 1 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 1 Static RAM w ith Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

cm6207

Abstract: KM61257-35 24PIN IDT71257L-45 IDT71257S-25 IDT71257S-35 IDT71257S-45 IDT71257S-70 IMS1800-25 IMS1800-35
Contextual Info: 107 2 5 6 K fâKÏËffl tt £ rc> X TAAC max ns TCAC max (ns) CMOS 'i TOE max (ns) -y TOH + TOD min sax (ns) (ns) y S t a t i c / TWP (ns) RAM ( 2 6 2 1 4 4 x 1 ) ft tt m. TDS TDH •in min (ns) (ns) (ns) TWD T»R V D D or V C C (ns) I DD max ■ax (V) 2 4 P I N

Contextual Info: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical

IDT71257

Abstract: CY7C197 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information