TCN75MOA
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION ïelwom Semiconductor, Inc. TCN75 2-WIRE SERIAL TEMPERATURE SENSOR AND THERMAL MONITOR FEATURES GENERAL DESCRIPTION • The TCN75 is a serially programmable temperature sensor that notifies the host controller when ambient tem perature exceeds a user-programmed setpoint. Hysteresis
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TCN75
250ja
TCN75
TCN75MOA
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corning fiber optic
Abstract: Corning flexcor fiber 1310nm otdr Gould Fiber Optics
Text: Single Window Tap Couplers<10% Coupling Ratio These couplers were specifically designed to be used in conjunction with erbium-doped fiber ampli fiers and other polarization sensitive applications. Low Polarization Tap Couplers Wavelength Flattened Short Wavelength Singlemode 780nm to 1060nm
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780nm
1060nm
1550nm
250jam
900jam
SMF-28
corning fiber optic
Corning flexcor fiber
1310nm otdr
Gould Fiber Optics
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Untitled
Abstract: No abstract text available
Text: ANALOG ÜFVICFS INC ANALOG DEVICES SIE D DfllbflGO Ü D 3 7 0 M M '- 7 1 - H - 374 • ANA l Precision Instrumentation Amplifier FEATURES Low Noise: 0 .3 | jlV p-p 0.1 Hz to 10Hz Low Nonlinearity: 0.003% G = 1 High CMRR: 120dB (G = 1000) Low Offset Voltage: 50|iV
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120dB
25MHz
MIL-STD-883B,
16-Pin
20-Terminal
EIA-481A
AD7524
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SMF-28 fiber
Abstract: No abstract text available
Text: Wavelength Flattened Couplers Because Wavelength Flattened Couplers are small and insensitive to operating wavelengths, they are suitable tor use in instrumentation, DWDM systems, trunk/loop branching, and CATV distribution. Their low optical loss and high direc
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1310nm,
1550nm,
1310nm
1550nm
250jim
900ju
900jam
SMF-28â
SMF-28 fiber
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MOSFET 10n60
Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)
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4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
O-247
300ns,
MOSFET 10n60
10N60A
ir 10n60
10N60
10N60R
3N90R
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LM 7850
Abstract: lm785 SMA905 SMA905 connector LML-785 785nm
Text: Preliminary Data Sheet LuxxMaster Wavelength Stabilized Fiber-coupled 785nm laser. Based on patent pending volume Bragg grating VBG ™ technology for stabilizing and shaping the emission spectra of high power laser diodes. Superior Performance: λc = ± 0.5 nm
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785nm
LML-785
LM 7850
lm785
SMA905
SMA905 connector
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OFET
Abstract: No abstract text available
Text: January 2006 SEM IC O N D U C TO R FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special MicroFET
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FDMA430NZ
OFET
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Fc 1237
Abstract: No abstract text available
Text: SbE » r z 7 ^ 7# • 7 c12ti E 3 7 003=1270 S G S -T H O M S O N H53 ■ SGTH 'T t 6 H - 0 5 " s G S-THOMSON TS G 8510 SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 5TH ORDER STOPBAND ATTENUATION : 33dB typ. PASSBAND RIPPLE : 0.05dB (typ.)
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1500kHz
20kHz
DIP-16
TSG85XX
SO-16
TSG8510
DIP-20
DIP-24
DIP-28
Fc 1237
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sae j1850 pwm ford
Abstract: Nippon capacitors MC68HC05X1
Text: HC05X1GRS/D REV 2.1 68HC05X1 SPECIFICATION REV 2.1 General Release June 29, 1994 Motorola Microprocessor & Memory Technologies Group Austin, Texas Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out
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HC05X1GRS/D
68HC05X1
HC05X1GRS/D
sae j1850 pwm ford
Nippon capacitors
MC68HC05X1
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1RF540
Abstract: IRF540S 1RF540S smd diode 2ba smd diode JD 103S AN-994 SMD-220 smd marking JD marking AI
Text: PD-9.898 International ioR Rectifier IRF540S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description
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IRF540S
SMD-220
50KtJ
1RF540
1RF540S
smd diode 2ba
smd diode JD
103S
AN-994
smd marking JD
marking AI
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1311 amplifier
Abstract: LT1311
Text: L ir m LT1311 TECHNOLOGY Q u a d 12MHz, 145ns Settling Precision C u rre n t-to -V o lta g e C o n v e rte r fo r O p tic a l Disk Drives FC n T U IK S Four Complete Current-to-Voltage Converters 14-Lead Small Outline Package Accurate Gain: 20mV/|jA, ±4%
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LT1311
12MHz,
145ns
28MHz,
23MHz,
1311 amplifier
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c 1406 ha
Abstract: ha 1406 ha IRLIZ24G
Text: PD-9.847 International i& R Rectifier IRLIZ24G HEXFET Power MOSFET • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • Fast Switching • Ease of Paralleling
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IRLIZ24G
O-220
c 1406 ha
ha 1406 ha
IRLIZ24G
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Untitled
Abstract: No abstract text available
Text: Preliminary bq2052 Gas Gauge 1C for Lithium Primary Cells Features General Description >• A ccu rate m e a s u re m e n t o f a v a il ab le c ap a city in L ith iu m p rim a ry b a tte rie s su c h a s L ith iu m S u l p h u r D ioxide a n d L ith iu m M a n
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bq2052
TD201803
bq2052
16-Pin
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bq2013
Abstract: lm d4
Text: Preliminary BENCHMARQ bq2013H Gas Gauge IC for PowerAssist Applications Features General Description >* A ccurate m easu rem en t of available charge in rechargeable b atteries T h e b q 2013H G as G auge IC is in tended for batteiy-pack installation to
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bq2013H
2013H
bq2013
lm d4
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smd diode marking 59A
Abstract: AN-994 IRF630S SMD-220 SMD resistors 59a OA 207 B diode IRG5 X_S marking
Text: PD-9.901 International S Rectifier IRF630S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^DS on = 0 - 4 0 0
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IRF630S
SMD-220
smd diode marking 59A
AN-994
IRF630S
SMD resistors 59a
OA 207 B diode
IRG5
X_S marking
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D0217
Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Text: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on
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620/FI-621/FI
622/FI-623/FI
IRF620
IRF620FI
IRF621
IRF621FI
IRF622
IRF622FI
IRF623
IRF623FI
D0217
IRFP 620
IRF622 application
FZJ 111
irf 44 n
FZJ 101
transistor irf620
pj62
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tda 7387
Abstract: tda 7368
Text: y UNITRODE UCC1857 UCC2857 UCC3857 Isolated Boost PFC Preregulator Controller PRELIMINARY FEATURES DESCRIPTION • PFC With Isolation, VQ < V!N The UCC3857 provides all of the control functions necessary for an Iso lated Boost PFC Converter. These converters have the advantage of trans
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UCC1857
UCC2857
UCC3857
UCC3857
tda 7387
tda 7368
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NE571D
Abstract: NE571N NE570N 570 compandor 570N NE570D NE570F NE571F SA571D SA571F
Text: Product sp ecification P h ilip s Se m ico nductors-Signe tics R F Com m unications Products Compandor NE570/571/SA571 PIN CONFIGURATION DESCRIPTION FEA TU R ES The NE570/571 is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor
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NE570/571/SA571
NE570/571
NE57Q/571
110dB
10-to-1
71100Bb
NE571D
NE571N
NE570N
570 compandor
570N
NE570D
NE570F
NE571F
SA571D
SA571F
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bq2052
Abstract: 7 segment
Text: t Benchmarq Products I from Texas Instruments Preliminary bq2052 Gas Gauge 1C for Lithium Primary Cells Features General Description >• A ccu rate m e a s u re m e n t o f a v a il ab le c ap a city in L ith iu m p rim a ry b a tte rie s su c h a s L ith iu m S u l
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bq2052
TD201803
16-Pin
7 segment
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jrc 2274
Abstract: JRC 2284 B ic HS 2272 jrc 2283 2279 JRC jrc op amplifier QL122 integrated circuit TL 2272 EL2250C jrc 2279
Text: EL2250C/EL2450C » i M r f w r mSmwmmmmwCmf HIGH PERFORMANCE ANAUMi tN U G RÄfSB CIRCUITS E L 2 2 5 0 C / E L 2 4 5 0 C 125 MHz Singh Supply Dual/Quad Op A mps F e a tu re s G en era l D e sc rip tio n • Specified for + 3V , + 5V , or + 5V A pplications
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EL2250C/EL245OC
250juA
15Meg
2110k
800e-18
810e-18
bf-50
DDD4b33
jrc 2274
JRC 2284 B
ic HS 2272
jrc 2283
2279 JRC
jrc op amplifier
QL122
integrated circuit TL 2272
EL2250C
jrc 2279
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Untitled
Abstract: No abstract text available
Text: SGR5N60RUF FEATURES N-CHANNEL IGBT D-PAK * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V @ lc=5A * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGR5N60RUF
10CTC
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Untitled
Abstract: No abstract text available
Text: SSH45N20A Advanced Power MOSFET FEATURES BV,DSS = 2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VOS= 200V
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SSH45N20A
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Untitled
Abstract: No abstract text available
Text: General Description Applications The MIC2562A PCMCIA Personal Computer Memory Card International Association and CardBus Power Controller handles all PC Card slot power supply pins, both Vcc and Vpp. The MIC2562A switches between the three Vcc voltages (OV,
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MIC2562A
250mA
System62A
MIC2562A
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2SB 731
Abstract: TSG8511 tup 631 TSG85
Text: SbE D • 7121237 0 G 3 lì204 157 ■ SGTH SCS-THOMSON S G S -T H O N S O N T S G 8511 IL iO T @ « S T - é V - O ? S W ITC H ED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 7TH ORDER STOPBAND ATTENUATION : 55dB typ PASSBAND RIPPLE : 0.1 dB (typ)
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TSG8511
1300kHz
TSG85XX
TSG8511
DIP-16
SO-16
FILTER051to127
DIP-24
j034rniner
2SB 731
tup 631
TSG85
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