250DEGC Search Results
250DEGC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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panasonic EEEFK1C470UR
Abstract: 47 vfk EEEFK1H470XP EEEFK1V331P EEEKF1V EEE-FK1H470XP Panasonic 330 vfk eeefk1c101p panasonic EEE-FK1V101XP EEEFK2A151AM
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250degC 240degC 240degC panasonic EEEFK1C470UR 47 vfk EEEFK1H470XP EEEFK1V331P EEEKF1V EEE-FK1H470XP Panasonic 330 vfk eeefk1c101p panasonic EEE-FK1V101XP EEEFK2A151AM | |
eee-1ha470xp
Abstract: EEE-0JS220WR EEE1EA221P EEE1CS100SR EEE1CA101WP EEE1HS010SR EEE0JA101SP EEE1EA221UP EEE1EA471P EEE1HA101UP
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250degC 235degC 240degC 230degC eee-1ha470xp EEE-0JS220WR EEE1EA221P EEE1CS100SR EEE1CA101WP EEE1HS010SR EEE0JA101SP EEE1EA221UP EEE1EA471P EEE1HA101UP | |
EMM5832Contextual Info: EMM5832VU Preliminary K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION |
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EMM5832VU EMM5832VU EMM5832 | |
Contextual Info: FMM5059VU Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The FMM5059VU is a MMIC amplifier that contains a three-stages |
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FMM5059VU FMM5059VU 1906B, | |
EMM5822VU
Abstract: FMM5822VU emm5822 FMM5822 k-band amplifier RO4003 power amplifier mmic
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FMM5822VU FMM5822VU 1906B, EMM5822VU emm5822 FMM5822 k-band amplifier RO4003 power amplifier mmic | |
FMM5804YD
Abstract: YC 27000 JESD22-A114-C J-STD-020B RO4003 rogers laminate materials
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FMM5804YD FMM5804YD YC 27000 JESD22-A114-C J-STD-020B RO4003 rogers laminate materials | |
ELL-3GM1R3N
Abstract: ELL3GM100M ELL3GM120M ELL3GM150M ELL3GM180M ELL3GM220M ELL3GM270M ELL3GM330M
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OCR Scan |
TlDC-02009 100mm 400mm 151-ELL3-006 2000pcs. ELL-3GM1R3N ELL3GM100M ELL3GM120M ELL3GM150M ELL3GM180M ELL3GM220M ELL3GM270M ELL3GM330M | |
Sumitomo 1076Contextual Info: FMM5804YD K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 24.5 dBm Typ. •High Linear Gain; GL = 17 dB(Typ.) •Frequency Band ; 17.5 – 26.5 GHz •SMT Laminate Package (YD Package) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5804YD is a power amplifier MMIC that contains a four |
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FMM5804YD FMM5804YD Sumitomo 1076 | |
high power diode axial
Abstract: HITACHI AXIAL DIODE ZSH5MA HITACHI
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260degC, 10sec 280degC, 300degC, 260degC 250degC, 20sec high power diode axial HITACHI AXIAL DIODE ZSH5MA HITACHI | |
EMM5135ZB
Abstract: RO4003 1305G eudyna an
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EMM5135ZB -16dBm 20pin EMM5135ZB 1906B, RO4003 1305G eudyna an | |
EMM5069ZB/001
Abstract: MMIC 545 ED-4701 RO4003 EMM5069ZB
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EMM5069ZB/001 20pin EMM5069ZB Pin0158 1906B, EMM5069ZB/001 MMIC 545 ED-4701 RO4003 | |
EMM5077
Abstract: EMM5077VU ED-4701 RO4003 C100p
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ES/EMM5077VU ES/EMM5077VU 1906B, EMM5077 EMM5077VU ED-4701 RO4003 C100p | |
EMM5075VU
Abstract: EMM5075 RO4003 PCB Rogers RO4003
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EMM5075VU EMM5075VU 1906B, EMM5075 RO4003 PCB Rogers RO4003 | |
ELL6UH471M
Abstract: ELL6UH330M ELL6UH100M ELL6UH390M ELL6UH120M ELL6UH820M ELL6UH331M ell6uh101m ELL6UH102M ELL6UH220M
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100mm 400mm 22-Feb-05 151-ELL6-087 1000pcs. ELL6UH471M ELL6UH330M ELL6UH100M ELL6UH390M ELL6UH120M ELL6UH820M ELL6UH331M ell6uh101m ELL6UH102M ELL6UH220M | |
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EMM5836V1BT
Abstract: EMM5836V1B power amplifier mmic
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EMM5836V1B EMM5836V1B 1906B, EMM5836V1BT power amplifier mmic | |
IQXO-53
Abstract: IQXO 100 IQXO* 500 CFPP-57
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IQXO-730, 2002/95/EC IQXO-53, IQXO-57, CFPS-130 250degC CFPP-57 CFPP-131 CFPS-131 IQXO-730 IQXO-53 IQXO 100 IQXO* 500 | |
Contextual Info: FMM5703YC K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.5dB Typ. @ f=30 GHz •High Associated Gain : Gas = 18dB ( Typ.) @ f=30 GHz •Broad Band : 24 - 30 GHz •High Output Power : P1dB = 6.0dBm ( Typ. ) @f=30GHz •Impedance Matched Zin/Zout = 50ohm |
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FMM5703YC 30GHz 50ohm FMM5703YC | |
rogers laminate materials
Abstract: SCL 1058 equivalent power amplifier mmic EMM5822VU
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FMM5822VU FMM5822VU rogers laminate materials SCL 1058 equivalent power amplifier mmic EMM5822VU | |
Contextual Info: EMM5832VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage |
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EMM5832VU EMM5832VU | |
emm5068Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages |
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EMM5068VU EMM5068VU emm5068 | |
EMM5074VU
Abstract: emm5074 RO4003 rogers laminate materials RF Module 5.8Ghz
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EMM5074VU 33dBm EMM5074VU RECOMMEN0158 1906B, emm5074 RO4003 rogers laminate materials RF Module 5.8Ghz | |
EMM5079ZB
Abstract: ED-4701 RO4003
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ES/EMM5079ZB 20pin ES/EMM5079ZB 1906B, EMM5079ZB ED-4701 RO4003 | |
EEVHB1V330P
Abstract: EEEHB1C100AR EEEH-B1C470AP EEV-HB0G470R EEV-HB0J101P EEV-HB0J220R EEV-HB0J330R EEV-HB0J470R PG44 EEV-HB0G221P
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250degC 235degC 240degC 230degC EEVHB1V330P EEEHB1C100AR EEEH-B1C470AP EEV-HB0G470R EEV-HB0J101P EEV-HB0J220R EEV-HB0J330R EEV-HB0J470R PG44 EEV-HB0G221P | |
EEVFC1H100P
Abstract: EEVFC1E221P EEVFC0J470R EEVFC1V101P EEV-FC0J102P EEV-FC0J152P EEV-FC0J220R EEV-FC0J221P EEV-FC0J331P EEV-FC0J680P
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250degC 235degC 240degC 230degC EEVFC1H100P EEVFC1E221P EEVFC0J470R EEVFC1V101P EEV-FC0J102P EEV-FC0J152P EEV-FC0J220R EEV-FC0J221P EEV-FC0J331P EEV-FC0J680P |