Untitled
Abstract: No abstract text available
Text: * * * 2502 Series * * * * Insulator : UL 94V-0 NYLON 6/6 * Contact: Brass * Ordering Information: 2502PÍ_Í *000 RoHS COMPLIANT 1 2 1. NO. of circuits 2. Plating: 0=Tin plated 120u" min. over 30u"min. nickel overall U=Gold flash over 30u"min. nickel overall
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2502PÃ
2502P020000
2502P030000
2502P040000
2502P050000
2502P060000
2502P070000
2502P080000
2502P090000
2502P100000
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6926DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6926DQ
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FDW2501NZ
Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501NZ
FDW2501NZ
2501NZ
DIODE marking S4 06
2502P
CBHK741B019
F63TNR
FDW2502P
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2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
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DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
DIODE S4 75a
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P Suffix "P" indicates molded PLASTIC with integrally mounted Heat Sink
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BRDB-2500P-1C
ADBD-2500P-1C
DB2500P
DB2510P
ADB2504P
ADB2508P
E141956
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DALLAS 2501
Abstract: DALLAS SEMICONDUCTOR 2501 dallas 2502
Text: DS2501-UNW /DS2505-UNW DALLAS SEMICONDUCTOR DS2501-U NW/DS2502-U NW UniqueWare Add Only Memory SPECIAL FEATURES • 512 bits D S2501-U N W or 1024 bits (D S 2502-U N W ) Electrically Program mable Read Only M em ory (EPROM ) com m unicates with the econom y of one sig
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DS2501-UNW
/DS2505-UNW
DS2501-U
NW/DS2502-U
S2501-U
2502-U
DS2501/2
S2502-U
DALLAS 2501
DALLAS SEMICONDUCTOR 2501
dallas 2502
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Untitled
Abstract: No abstract text available
Text: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
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Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6435DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW252P
Text: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW252P
FDW2502P
2502P
CBHK741B019
F63TNR
FDW252P
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2506P
Abstract: 2508P db250 SDB250 ADB2504P ADB2508P DB2500P DB2510P 2504P
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
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BRDB-2500P-1C
ADBD-2500P-1C
DB2500P
DB2510P
ADB2504P
ADB2508P
2506P
2508P
db250
SDB250
ADB2508P
2504P
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2502P
Abstract: FDW2502P
Text: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
2502P
FDW2502P
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FDW2502PZ
Abstract: No abstract text available
Text: 2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502PZ
FDW2502PZ
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
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BRDB-2500P-1C
ADBD-2500P-1C
DB2500P
DB2510P
ADB2504P
ADB2508P
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2502P
Abstract: FDW2502P
Text: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
2502P
FDW2502P
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7400 fan-out
Abstract: 7400 signetics AM2504 AM2504PC AM25L04FM D-16 P-24 TTL 7400 propagation delay AM2504DC
Text: Am2502/3/4 Family E ig h t-B it/T w e lv e -B it S u c c e s s iv e A p proxim atio n R eg is ters Distinctive Characteristics • • • • C o n ta in s all th e storage and c o n tro l f o r successive a p p r o x im a tio n A -to -D converters. Provision fo r register e x te n s io n o r tru n c a tio n .
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Am2502/3/4
Am2502,
Am2503
Am2504
12-bit
digitaAm25L03FM
Am2504FM
AM25L04FM
Am2502XM
Am25L02XM
7400 fan-out
7400 signetics
AM2504PC
D-16
P-24
TTL 7400 propagation delay
AM2504DC
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DIODE marking S4 06
Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
DIODE marking S4 06
MOSFET TSSOP-8
S4 DIODE schottky
2502P
CBHK741B019
F63TNR
FDW2502P
FDW6923
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
Text: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6966DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6966DQ
Diode S4 55a
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Untitled
Abstract: No abstract text available
Text: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-2500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES FDB2500P - FDB2510P PRV Ratings from 50 to 1000 Volts Suffix "P" indicates molded PLASTIC with intergrally mounted Heat Sink
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FRDB-2500P-1B
FDB2500P
FDB2510P
E141956
300mm2
2500P
2501P
2502P
2504P
2506P
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2502P
Abstract: FDW2502P
Text: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
2502P
FDW2502P
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