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Littelfuse Inc IXTH24N50L MOSFET N-CH 500V 24A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH24N50L	Tube	26		1	1 $35.15 10 $35.15 100 $25.025 1000 $25.025 10000 $25.025	Buy Now
Newark	IXTH24N50L	Bulk			300	1 - 10 - 100 - 1000 $26.23 10000 $26.23	Buy Now
HUBER+SUHNER 24_N-50-4-21-199_NE RF CONNECTORS / COAXIAL CONNECTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	24_N-50-4-21-199_NE	Box	25		1	1 $86.84 10 $86.84 100 $86.84 1000 $86.84 10000 $86.84	Buy Now
onsemi FQA24N50 MOSFET N-CH 500V 24A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQA24N50	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	FQA24N50			143 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FQA24N50			143 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFT24N50 MOSFET N-CH 500V 24A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT24N50	Tube			30	1 - 10 - 100 $7.43967 1000 $7.43967 10000 $7.43967	Buy Now
IXYS Corporation IXFR24N50 MOSFET N-CH 500V 24A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR24N50	Tube			30	1 - 10 - 100 $6.12233 1000 $6.12233 10000 $6.12233	Buy Now

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24N50 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
24_N-50-2-14/133_NE	HUBER+SUHNER	24_N-50-2-14/133_NE	Original	PDF
24_N-50-3-14/133_NE	HUBER+SUHNER	24_N-50-3-14/133_NE	Original	PDF
24_N-50-3-51/19-_NE	HUBER+SUHNER	24_N-50-3-51/19-_NE	Original	PDF

24N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ixf26n50q Abstract: 24N50 26N50Q 125OC ixf26N50 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24N50Q 26N50Q 125OC 728B1 ixf26n50q 24N50 26N50Q 125OC ixf26N50	PDF
24N50 Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50 Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50	PDF
26N50 Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50 Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 26N50 IXFC 26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	24N50 24N50 QW-R502-533	PDF
24N50 Abstract: mosfet 24n50 24N50L-T47-T Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	24N50 24N50 QW-R502-533 mosfet 24n50 24N50L-T47-T	PDF
24N60 Abstract: IXGH24N50B IXGH24N60B Text: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B	PDF
c2548 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1	PDF
ixfh26n50q Abstract: 26N50 IXFC 26N50 Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS220TM 26N50Q 24N50Q 220TM 26N50 24N50 ixfh26n50q IXFC 26N50	PDF
24n50 Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250 Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family	OCR Scan	ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250	PDF
26N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26N50 ISOPLUS247TM 24N50 24N50 IXFR26N50	PDF
W2515 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1	PDF
ixf26N50 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24N50Q 26N50Q O-240 125OC 728B1 ixf26N50	PDF
26n50 Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50 Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol	Original	ISOPLUS220TM 26N50 24N50 220TM IXFC26N50 IXFC24N50 IXFH26N50 26n50 .24n50 24n50 ixfc26n50 IXFC24N50 W26-1 Ixfc 26n50	PDF
24N50 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH	OCR Scan	24N50BU1 24N60BU1 24N50 24N60 -247A 24N50 IXGH24N50BU1 IXGH24N60BU1	PDF

24N50 Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50 Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1 24N50 26N50 IXFC24N50 IXFC26N50	PDF
26N50 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 26N50 24N50 24N50 IXFR26N50	PDF
26N50 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS220TM 26N50Q 24N50Q 26N50 24N50 24N50 IXFC26N50Q	PDF
26N50Q Abstract: IXFH26N50Q 24N50Q Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q	PDF
Untitled Abstract: No abstract text available Text: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous	Original	21N50 24N50 O-247 O-204	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	ISOPLUS220TM 26N50 24N50 220LVTM IXFC26N50 IXFC24N50 IXFH26N50 728B1 123B1 728B1	PDF
GEM X 365 Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd Text: Prelim inary data HiPerFAST IGBT 24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Power MOSFETs Q-Class VDSS = 500 V = 24 A ID25 RDS on = 0.24 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	24N50Q O-247 728B1 123B1 728B1 065B1	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family	OCR Scan	ISOPLUS247â 26N50 24N50 IXFR26N50	PDF
.24n50 Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1 Text: Preliminary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24NBU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C	OCR Scan	IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1	PDF

24N50 Search Results

24N50 Price and Stock

Littelfuse Inc IXTH24N50L

HUBER+SUHNER 24_N-50-4-21-199_NE

onsemi FQA24N50

IXYS Corporation IXFT24N50

IXYS Corporation IXFR24N50

24N50 Datasheets (3)

24N50 Datasheets Context Search

ixf26n50q

24N50

26N50

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24N50

24N60

c2548

ixfh26n50q

24n50

26N50

W2515

ixf26N50

26n50

24N50

24N50

26N50

26N50

26N50Q

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GEM X 365

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.24n50