24JUL06 Search Results

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. GP REVISIONS DIST 00 LTR L DESCRIPTION REVISED PER E C O - 0 5- 010789 DATE DWN APVD 24JUL06 BM SS 14.00 0 .80 TYP 2 .79

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - ALL RIGHTS RESERVED. LOC DIST GP 00 REVISIONS LTR M AMP PART NO D DATE CODE A 18.60 [0.732] AMP LOGO DATE DWN 24JUL06 REVISED PER ECN 0S 13 - 0 1 6 6 - 0 5

Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2

V60100C

Contextual Info: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

MC9S12XF512RMV1

Abstract: S12XF temperature controller CHB 401 asea MBT 225 PMF15B6C MC9S12XF256 P112l ifr 2310 Operating Manual ASEA motor b3 freescale superflash
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512RMV1 Rev.1.20 10-Nov-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

292D3

Contextual Info: 292D Vishay Sprague Solid Tantalum Chip Capacitors, TANTAMOUNT Lead Frameless Molded FEATURES • 0805 Footprint • Wraparound lead Pb -free terminations: P and R Cases Pb-free Available • 8 mm, 12 mm, 16 mm tape and reel packaging available per EIA-481-1 and reeling per IEC

Contextual Info: UG F,B 8HCT & UG(F,B)8JCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency

SC-89

Abstract: Si1072X S-61291
Contextual Info: Si1072X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.093 at VGS = 10 V 1.3a 0.129 at VGS = 4.5 V 1.2 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 5.41 RoHS APPLICATIONS

Si1056X

Abstract: SC-89
Contextual Info: Si1056X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.089 at VGS = 4.5 V 1.32 0.098 at VGS = 2.5 V 1.26 0.121 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS

SC-89

Abstract: SI1070X
Contextual Info: Si1070X Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.099 at VGS = 4.5 V 1.2a 0.140 at VGS = 2.5 V 1.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 3.5 RoHS APPLICATIONS

9S12XEP100

Abstract: DELAY code for MC9S12XEP100 S12XMPUV1 9S12XEP768 9S12XE S12XMMCV4 ADC12B16C example MC9S12XEP100 MC9S12XE100 9S12x
Contextual Info: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.02 11/2006 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

manual temperature controller CHB 702

Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

Contextual Info: Si7447ADP Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 30 0.0065 at VGS = - 10 V - 35 100 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 RoHS COMPLIANT S • Battery and Load Switching

74172

Contextual Info: SPICE Device Model SUM90P10-19 Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74179

Abstract: Si7858ADP
Contextual Info: SPICE Device Model Si7858ADP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74169

Abstract: 74169 datasheet data sheet 74169 sUM90P10-19L sum90p10
Contextual Info: SPICE Device Model SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

PLD-10

Contextual Info: MC9S12XEP100 Reference Manual Covers MC9S12XE Family HCS12 Microcontrollers MC9S12XEP100 Rev. 1.07 05/2007 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

P112l

Abstract: MC9S12XF MC9S12XF512V1RM freescale user manuals of MC9S12XF512 MC9S12XF512 motor driver ic 7324 1218 footprint IPC IFR 740 freescale superflash S12X
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.19 18-May-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

74282

Abstract: SI7430DP Si7430DP-T1-E3
Contextual Info: Si7430DP Vishay Siliconix New Product N-Channel 150-V D-S WFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (Ω) ID (A)a 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested

MBR30H35CT

Contextual Info: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

MBR20H35CT

Contextual Info: MBR F,B 20H35CT thru MBR(F,B)20H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency

Contextual Info: 1N914 Vishay Semiconductors Fast Switching Diodes Features • • • • • • Fast switching speed High reliability e2 High conductance For general purpose switching applications Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Contextual Info: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability

Contextual Info: UG F,B 18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop