24 TRANSISTOR MAKING Search Results

DICLAD522T

Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and

F1 J37

Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

d1763

Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

2SD843

Contextual Info: TOSHIBA 2SD843 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS 1 2 001 05-24 - TOSHIBA 2SD843 ELECTRICAL CHARACTERISTICS Ta = 25°C 2 2 001 05-24 - COLLECTOR-EMITTER VOLTAGE hpE Vq e

NEC E170632

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL6448AC33-24 26 cm 10.4 inches , 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL6448AC33-24 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising

VO6C

Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2

th 20594

Abstract: HA 17723 30976 1982U 22024U
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

NEC k 1995 transistor

Abstract: 3SK176A rf id based home appliances control
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

2SK3051

Abstract: K3051
Contextual Info: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

Contextual Info: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

Contextual Info: TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.)

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) · High forward transfer admittance: |Yfs| = 14 S (typ.)

2SK30

Abstract: 2SK3051 K3051
Contextual Info: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)

TPCF8102

Abstract: A2430
Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

k2550

Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)

TPC8305

Contextual Info: TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.)