MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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OCR Scan
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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PDF
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23v4000
Abstract: M5EV
Text: 23V4000D £ TY7KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES G E N ER A L DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V O peration: 100ns(Max.) 3.0V O peration: 120ns(Max.) 2.5V O peration: 250n$(Max.) • Supply voltage
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OCR Scan
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KM23V4000D(
TY7KM23S4000D
512Kx8)
100ns
120ns
KM23V4000D
KM23S4Q00D
4000D
32-TSOP1-0820
23V4000D
23v4000
M5EV
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PDF
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Untitled
Abstract: No abstract text available
Text: 23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(M ax.) • Supply voltage
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OCR Scan
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KM23V4000D
TY/KM23S4000D
512Kx8)
100ns
120ns
250ns
23V4000D
23S4000D
4000D
32-TSQ
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PDF
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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OCR Scan
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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PDF
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Untitled
Abstract: No abstract text available
Text: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,283 x 8 bit organization • Fast access time 3.3V O peration: 1Q0ns(Max.) 3.0V O peration: 120ns(Max.) • Supply voltag e: single +3.0V/ single +3.3V • Current consumption
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OCR Scan
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KM23V4000D
512Kx8)
120ns
23V40000
32-DIP-600
KM23V4000DG
32-SOP-525
KM23V40QQD
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PDF
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Untitled
Abstract: No abstract text available
Text: 23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) 2.5V Operation : 250ns(M ax.) • Supply voltage
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OCR Scan
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KM23V4000D
TY/KM23S4000D
512Kx8)
100ns
120ns
250ns
23V4000D
23S4000D
4000D
32-TSQ
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PDF
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23V4000DG
Abstract: No abstract text available
Text: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • C urrent consumption
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OCR Scan
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KM23V4000D
512Kx8)
100ns
120ns
23V4000D
32-DIP-600
23V4000DG
32-SOP-525
23V4000DG
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PDF
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Untitled
Abstract: No abstract text available
Text: 23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption
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OCR Scan
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KM23V4000D
512Kx8)
100ns
120ns
23V4000D
32-DIP-600
23V4000DG
32-SOP-525
23V4000D
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PDF
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16
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OCR Scan
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KM23C4000D
KM23C4100D
KM23C41
KM23V64000T.
KM23V64005AG
KM23V64005ATY.
KM23V64205ASG
KM23SV32205T
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PDF
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