23MOD Search Results

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

1SS321

Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

1SS187

Abstract: marking MI
Contextual Info: 1SS187 SILICON EPITAXIAL PLANAR TYPE U n i t in m m ULTRA HIGH SPEED SWITCHING APPLICATION. f-Q5 2 . 5 - 0.3 FEATURES : . Small Package : SOT-23MOD . Low Forward Voltage : Vp = 0 .9 2 V T y p . . Fast Reverse Recovery Time : t r r - l •6 n s ( T y p . )

TE85

Contextual Info: III. TAPING FOR SOT-23MOD PACKAGE PACKAGING METHOD A. The tape dimensions are per figure 3-1. Unit in m m Fig. 3-1 Note 1. Note 2. Accumulated pitch tolerance is ±0.2rtun/10 pitch. No splices allowed in either the carrier tape or cover tape. Part orientation in the carrier tape shall be as shown in figure 3-2.

2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

1SS321

Contextual Info: TOSHIBA 1SS321 TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current • ÏR = 500nA (Max.) : SC-59 (SOT-23MOD) Small Package M A X IM U M RATINGS (Ta = 25°C)

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF = 0.42V typ. z Low reverse current : IR = 500nA (max) z Small package : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C)

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

SS321

Contextual Info: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C)

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: IV. MAGAZINE FOR SOT-23MOD PACKAGE A. SPECIFICATIONS FOR MAGAZINE Magazine materials Quantity . . . . . . . Plastic 50 pcs/magazine The magazine dimensions are per figure 4-1. Unit in mm 178.2±0.2 3.35 3.5±0.05 x 49 - 171.5±0.2 -4- Count mark 5 pcs/count mark

Contextual Info: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C)

Lucent SLC 96 cabinet

Abstract: 2VR375E j85500D J85500D2 Lucent SLC 5 cabinet KS-23619 J85500D-2 electrochemical gas sensors datasheet UL-94-VO O RINGS 12 volt lead acid battery construction
Contextual Info: Enhanced VR Series Batteries KS-23619 Product Manual Select Code 157-622-011 Comcode 107817074 Issue 5 December 1998 1998 Lucent Technologies Product Manual KS-23619 Select Code 157-622-011 Comcode 107817074 Issue 5 December 1998 Lucent Technologies Enhanced VR Series Batteries

MT47H128M16* Layout rules

Abstract: LCD TV tutorials
Contextual Info: REF: BBONE_SRM BeagleBone System Reference Manual Rev A6.0.0 BeagleBone Rev A6 System Reference Manual Revision 0.0 May 9, 2012 Send all comments and errors to the author: Gerald Coley gerald@beagleboard.org Page 1 of 92 REF: BBONE_SRM BeagleBone System Reference

Contextual Info: MITSUBISHI ELEK {LINEARI ÔO D E jts 'n a a b ootm sa a | E MITSUBISHI LINEAR ICs 6249826 MI!SUBISHI ELEK LINEAR _ 80C 0 9 158 D' T - 5 2 - 13-07 12-PO IN T/23-M O PE LED DRIVER DESCRIPTION Th e M 5 1 9 0 1 P is a semiconductor integrated circu it consist- •

8048 microprocessor keyboard

Contextual Info: SSI 73K321L dim systems' CCITT V.23, V.21 Single-Chip Modem A TDK Group/Company December 1992 DESCRIPTION FEATURES The SSI 73K321L is a highly integrated single-chip modem IC which provides the functions needed to construct a CCITT V.23 and V.21 compatible modem,

tda1316

Abstract: tda1316 write amplifier CHN 712 tda1316 write SAA7323 SAA2022 TDA1317 Q445 SAA2022GP SAA2032
Contextual Info: Product specification Philips Sem iconductors Tape formatting and error correction for the DCC system S A A 2022 FEATURES • Integrated error correction encoder/decoder function with Digital Compact Cassette DCC optimized algorithms COMPACT CASSETTE • Control of capstan servo during recording and after