23MAR11 Search Results

D5200

Contextual Info: THIS 'c DRAWING IS COPYRIGHT UNPUBLISHED. 1996 R E L E A S E D FOR ALL - P U B LIC A T IO N RIGHTS R E V I S I O N S RESERVED. DWN DESCRIPTION a A D E2 m U fi-: REVISED PER EC0-11 - 0 0 5 0 3 0 23MAR11 APVD RK HMR 7 *•> Jx * r D 9 A -V -0 ), -Ê: H » $ y y r ± j E i c f - 7 a'sggfcn z t

U5025

Contextual Info: 4 THIS DR A WI NG IS COPYRI GHT UNPUBLISHED. 3 RELEASED BY - FOR ALL PUBLICATION INTERNATIONAL RIGHTS RESERVED. c Ar ÌA VIEW ACCORDING F WITHOUT CRIMPING WINGS 1471-9 2 / 0 9 1 2 LOC DIST REVISIONS A I AI p L TR DESCRIPTION D1 DATE DWN APVD 23MAR11 RK HMR

Contextual Info: 4 T H IS DRAW IN G IS U N P U B L IS H E D . 3 2 R ELEA SED FOR PU B LIC ATIO N Dl A LL RIGHTS R ESERVED . R EVISIO N S DO D E S C R IP T IO N F1 REVISED PER ECO- -005030 23MAR11 RK HMR D LOCKWASHER MATERIAL: STAINLESS STEEL PER Q Q -S-766 FINISH: PASSIVATED PER Q Q - P - 3 5 B

7168-m

Abstract: V23105-A5XXX-A201 plc dc 3 din 7168 9121
Contextual Info: REV I S I ONS DIST LOC HJ p - LTR DESCRIPTION REVISED PER ECO-11-005150 A6 Re I a y 16 DATE 13 23MAR11 DWN APVD RK HMR - b o t t om v i e w 11 1 n +0 . 0 5 U .n 2 0 . 2 Î 8 - 8 J 3AX1COM ^ D 2 n - 'z z V DC ir \ xxx - R e la y type il - nomi na I v o i t a g e

046J

Abstract: furnas CP63-046J CP-63 1/RESISTOR 046J SSRN
Contextual Info: o Lo£ RELEASED PC * P U B L 1CAT 1QH THIS DRAW INO IS UNPUBLISHED, A L L R IG H TS RESERVED. c COPYRIGHT rn rr R E V IS ÌO N S O’ T tr" D4 "oEscrT pTTon “CRTS’" REVISED PER ECO-11-005030 OWN 23MAR11 RK HMR D TRADE MARK /¿ •& H /- K 7 H 7 ^ a 97

7168-m

Abstract: D0230
Contextual Info: R EV IS IONS D IST LOC HJ p - LT R D ESC RIPT IO N D ATE A6 REVISED PER ECO-11-005150 Relay 10 8 7 23MAR11 DWN APV D RK HMR - bot tom v i e w 6 7 14. 9 5d=0 . 0 5 v i- n lO -H uO o -H m 0 1 ro t O -H 2. 54!8;!| 0. 5 ro rO 5.08:§;!| 1.115 2 . 5 4 1 1 1 281400992000

Contextual Info: LOC REVI SI ONS D IST J p — s s D ESCR IPTIO N LTR A1 DWN DATE RK HM R 23MAR11 R E V ISE D P E R ECO-11-005030 APVD 1 .45 -0.5M AX CUT OFF TAB •°-1 -4 .4 - J 1.75 unj j = D M 0 = - I 1.86 (1 .5 2 ) SECT. B - B ( 2.2)0.4- (2 .7 ) SECT. C-C NOTE 1. G EN ERAL T O R ELA NC E : ±0.3,±3°

MS-018

Abstract: ECR-11 ECR11 1433B 3-822516-3
Contextual Info: 4 TH IS D R A W IN G IS U N P U B L I S H E D . RELEASED FOR ALL COPY RIGHT 2009 PUB LICATION R IG H T S AUC 2006 D IS T LOC RESERVED. R E V IS IO N S D B Y TYCO ELECTRONICS CORPORA TION. LTR D E S C R IP T IO N A2 D A TOP VIEW R E V IS E D DATE 23MAR11 E C R — 11 — 0 0 6 0 2 0

DVI-D Single Link

Abstract: POS17 DVI-D Single Link spec
Contextual Info: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL By C O P Y R IG H T P U B L IC A T IO N R IG H TS - .- REVISIO N S RESERVED. GR - 00 LTR D E S C R IP T IO N REVISED PER DATE ECO —1 1 - 0 0 5 0 3 3 DWN RK HMR 23MAR11 Pos. 1 6 Pos. 24

Si4501A

Abstract: SI4501BDY
Contextual Info: Specification Comparison Vishay Siliconix Si4501BDY vs. Si4501ADY Description: Package: Pin Out: 30 V N-Channel and 8 V P-Channel, D-S MOSFETs SO-8 Identical Part Number Replacements: Si4501BDY-T1-GE3 replaces Si4501ADY-T1-E3 Si4501BDY-T1-GE3 replaces Si4501ADY-T1-GE3

TLLR4400

Abstract: TLLG440 TLLR440 TLLR4401 TLLY440
Contextual Info: TLLG440., TLLR440., TLLY440. Vishay Semiconductors Low Current LED in Ø 3 mm Tinted Diffused Package FEATURES • • • • • • • 19220 PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: 3 mm • Product series: low current • Angle of half intensity: ± 25°

Contextual Info: New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation

Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm

Contextual Info: New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation

Contextual Info: New Product VT4045C, VIT4045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT1060C, VIT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses

Contextual Info: New Product V30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm

Contextual Info: T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible light much like the human

Contextual Info: New Product V20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product V30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: New Product V30120C, VI30120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT6045C, VIT6045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product VT3060G, VIT3060G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses