Untitled
Abstract: No abstract text available
Text: TIP47, TIP48, TIP49, TIP50 TIP47, 48,49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31.24
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TIP47,
TIP48,
TIP49,
TIP50
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CBR1545CT
Abstract: No abstract text available
Text: CBR1545CT Dual 4L Dual Centre Tap Schottky Barrier Rectifier Suited for SMPS and High Frequency E)C to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device . If(AV)
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CBR1545CT
00D11G7
CBR1545CT
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MJE170
Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Text: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R
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MJE170,
MJE171,
MJE172
MJE180,
MJE181,
MJE182
MJE170
MJE171
MJE180
MJE181
MJE182
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v23033
Abstract: a06 transistor TRANSISTOR A06 marking A06 MARKING J1A CMBTA05 CMBTA06
Text: CMBTA05 CMBTA06 CDIL SILICON EPITAXIAL TRANSISTORS N -P -N transistor P A C K A G E O U T L IN E D ETAILS A L L D IM EN SIO N S IN m m M arking CMBTA05 = 1H CMBTA06 = 1G _3.0 2.8 0.14 0.09 0.48 0.38 3 2.6 Pin configuration 2 .4 BASE EMITTER 3 = COLLECTOR _K02
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CMBTA05
CMBTA06
CMBTA05
v23033
a06 transistor
TRANSISTOR A06
marking A06
MARKING J1A
CMBTA06
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CSB834
Abstract: CSD880 A1442
Text: CSB834 CSB834 PNP PLASTIC POWER TRANSISTOR Complementary CSD880 Low frequency Power Amplifier Applications DIM A C D E F G H J K L M N ' MIN 14.42 9.63 3.56 MAX 16.51 10.67 4.83 0.90 1,15 1.40 3,75 3.66 2,29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2,03 2.92 31.24
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CSB834
CSB834
CSD880
23fl33T4
CSD880
A1442
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2SA10150
Abstract: SO-160
Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8
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2SA537
2SA10150
SO-160
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BCG36
Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50
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GG00124
O-92-4
BC307B
BC327
BCG36
bc557
SALJ
TO-92-4pin
BC327-10
to-92-4
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CSA1012
Abstract: CSC2562 ic 356 transistor CSA1012
Text: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75
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CSA1012,
CSC2562
CSA1012
CSC2562
ic 356
transistor CSA1012
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
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BCW89
23fl33T4
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Untitled
Abstract: No abstract text available
Text: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN
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TIP41,
TIP41A,
TIP41B,
TIP41C
TIP42,
TIP42A,
TIP42B,
TIP42C
23fl33T4
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BD168
Abstract: No abstract text available
Text: CDIL BD166, BD168, BD170 BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BD165, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP.
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BD166,
BD168,
BD170
BDI66
BD165,
23fl33T4
BD168
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Untitled
Abstract: No abstract text available
Text: BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BSR20 = T35 BSR20A = T36 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6
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BSR20
BSR20A
23fl33T4
250nA;
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W15NA
Abstract: No abstract text available
Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14
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E3fl33T4
BC849
BC850
BC849B
BC849C
BC850B
8C850C
W15NA
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Untitled
Abstract: No abstract text available
Text: TO-220 MIN MAX A B 14.42 9,63 C D E F G H J 3,56 16,51 10.67 4,83 0,90 1,40 3,88 2,79 K L M N 12,70 DIM =r uf D^ U g - 1,15 3,75 2,29 2,54 - 2,03 7 3,43 0,56 14,73 6,35 2,92 31,24 DEG TO-220 Power Package Transistors NPN Maximum Ratings Type No. (V) Min
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O-220
O-220
2N5294
2N5296
2SC22380
2SC2238Y
2SC2335
2SC23350
23fl33T4
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BD168
Abstract: transistor bd170 BD165 BD166 BD170
Text: BD166, BD168, BD170 CDÎL BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BDI 65, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7.4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E
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BDI66
BD165,
BD167,
BD169
BD166,
BD168,
BD170
23fl33T4
BD168
transistor bd170
BD165
BD166
BD170
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RD10EB2
Abstract: RD10EB RD10EB1 RD10EB3 RD5V6EB
Text: DO-35 Zener Diodes 500 mW E le c tric a l C h a ra c te ris tic s (A t Ta=25°C, U n le ss O th e rw ise S p e cifie d ) Type No. min RD3V3EB V ZT rZT Temp. Coeff. at lZT 3t lZT of nom (V) max max (Ohm) (mA) 1 Zener Voltage typ (%/°C) •n a t V v r Ta
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DO-35
RD10EB
RD10EB1
RD10EB2
RD10EB3
DD0CH15
RD5V6EB
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35hm
Abstract: CMBT2222 CMBT2222A
Text: CDU CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N—P -N silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking CMBT2222 = IB CMBT2222A = IP 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT2222
CMBT2222A
CMBT2222
100nA;
35hm
CMBT2222A
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B0176
Abstract: 80178 l206 transistor npn transistors,pnp transistors BD175 BD176 BD177 BD178 BD179 BD180
Text: CDU BD175, BD177, BD179 BD176, BD178, BD180 BD I75,177,179 BD176,178,180 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM “V i> J- i_ ÜJ E U
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BD175,
BD177,
BD179
BD176,
BD178,
BD180
BDI75
BDI76
BD175
0001E0L.
B0176
80178
l206 transistor
npn transistors,pnp transistors
BD176
BD177
BD178
BD180
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Untitled
Abstract: No abstract text available
Text: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT3905
23fl33T4
D000fi20
23A33T4
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Untitled
Abstract: No abstract text available
Text: CMBT2222 CMBT2222A CDÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking CMBT2222 = IB CMBT2222A = IP PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
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CMBT2222
CMBT2222A
CMBT2222
150mA;
500mA;
100nA;
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CIL612
Abstract: CIL622 CIL532 CIL-531 CIL601 CIL602 CIL611 CIL613 2N4141 CIL631
Text: TO-106 EPOXY PACKAGE TRANSISTORS NPN Type V CBO No. V CEO V EBO !c b o VCB « hFE (V) (V) (V) (MA) (V) Min Min Min Max Min Max CIL631 140 120 5.0 0.10 100 20 CIL621 100 100 5.0 0.50 80 40 CIL622 100 100 5.0 0.50 80 CIL611 80 80 5.0 0.50 CIL612 80 80 5.0
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O-106
CIL631
CIL621
CIL622
CIL611
CIL612
CIL613
2N4275
CIL769
2N4274
CIL532
CIL-531
CIL601
CIL602
2N4141
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IC marking jw
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_
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BC849
BC850
BC849B
BC849C
BC850B
100frequency
IC marking jw
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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Untitled
Abstract: No abstract text available
Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
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2SA1362
23fl33T4
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BD115
Abstract: TO-92-4pin
Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)
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2N3439
2N3742
BD115
TO-92-4pin
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