2SA1362 Search Results

Contextual Info: 2SA1362 SILICON PNP EPITAXIAL TYPE TRANSISTOR Unit in mm LO W FREQUENCY PO W ER AMPLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • High DC Current Gain : hpg = 120~400 Low Saturation Voltage : VcE sat = —0.2V (Max.) (Ic = -400mA, Ig = —8mA)

Contextual Info: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage

2SA1362

Abstract: A1362
Contextual Info: TOSHIBA 2SA1362 2 S A 1 362 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS LO W FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • High DC Current Gain : hpE = 120~400 Low Saturation Voltage : V ce (sat) = -0.2V (Max.) (Ic = -400mA, IB = -8mA)

Contextual Info: 2SA1362 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).2 @I(C) (A) (Test Condition)400m

2SA1362

Contextual Info: 2SA1362 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1362 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 120~400 • コレクタ･エミッタ間飽和電圧が低い。

Contextual Info: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120 to 400 • Low saturation voltage: VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA)

Contextual Info: Product specification 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SA1362

Abstract: SMD iC MARKING AE AE MARKING
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Suitable for driver stage of small motor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

2SA1362

Abstract: A1362
Contextual Info: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage

2SA1362

Contextual Info: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 · Low saturation voltage: VCE (sat) = −0.2 V (max) · Suitable for driver stage of small motor

Contextual Info: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •

2SA1362

Contextual Info: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

2SA1362

Contextual Info: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor

2SA1362

Contextual Info: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

high voltage pnp transistor 700v

Abstract: 743V pnp transistor 800v
Contextual Info: Section 3.4 POWER MANAGEMENT 1C • Description The S-8470AFS is a CMOS power management 1C for portable telephones. It contains a watch­ dog timer circuit, in addition to four series-type voltage regulators and four voltage detectors. Features • Four built-in high-precision voltage regulators with

S-8324

Abstract: S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328
Contextual Info: Contents Features . 1 Applications . 1 Block Diagram . 1 Selection Guide . 2

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

2SA1362

Abstract: SSOP24 TA2002F TA2002FN
Contextual Info: TA2002F / FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2002F,TA2002FN Stereo Headphone Amplifier 3V USE The TA2002F, TA2002FN are developed for play−back stereo headphone equipments (3V use). They are built in dual auto−reverse preamplifier, dual OCL

Contextual Info: T O SH IB A TENTATIVE TA8302F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 8302F MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and FreeWheeling diode. This 1C is suitable for a camera use motor drive

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157