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    23DB Search Results

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    SN65C3223DBR Texas Instruments 3-V to 5-V Multichannel RS-232 Compatible Line Driver/Receiver 20-SSOP -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

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    Rochester Electronics LLC SN65LV1023DBR

    LINE DRIVER, 1 FUNC, 1 DRIVER
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    Rochester Electronics LLC 74HCT123DB,118

    74HCT123 - DUAL RETRIGGERABLE MO
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    Rochester Electronics LLC 74HCT423DB,112

    IC MULTIVIBRATOR 22NS 16SSOP
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    STMicroelectronics MP23DB01HPTR

    MIC MEMS DIGITAL PDM OMNI -24DB
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    Rochester Electronics LLC SN74LS123DB

    IC MULTIVIBRATOR
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    23DB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    23DBEZ001 Essentra Components CBL CLIP TWIST LOCK NATURAL Original PDF
    23DBEZ002 Essentra Components CBL CLIP DL TWIST LOCK NATURAL Original PDF

    23DB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3136

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		-2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136 PDF

    RF POWER TRANSISTOR NPN

    Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃


    Original     		2SC3123 200MHz 260MHz RF POWER TRANSISTOR NPN 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HE385C/HEM385C/HES385C Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 20～250MHz l Low Noise: 1.8dB(Typical) l 23dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation


    Original     		HE385C/HEM385C/HES385C 250MHz 23dBm 17VDC 13dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 5.0V NC VCC1 NC 12 RF IN 2 Input Match 28dB Typical Small Signal Gain RF IN 3 10 RF OUT „ „ „ „ Power Detector Bias Circuit NC 4 9 NC 5 +23dBm, <4%EVM, 250mA at VCC =5.0V


    Original     		RF5125 16-Pin, 21dBm, 185mA 23dBm, 250mA 2400MHz 2500MHz IEEE802 11b/g/n PDF

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Directional Coupler 50Ω 23dB ZNDC-23-2G 800 to 2000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power input 3W Max. Coaxial Connections INPUT OUTPUT COUPLED 1 2 3 • excellent insertion loss, 0.5 dB typ.


    Original     		ZNDC-23-2G FM587 ZNDC-23-2G-S ZNDC-23-2G M91182 ED-10203 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Frequency Mixer Level 23 LO Power +23dBm 400 to 2500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature • • • • RoHS compliant very high IP3, 32 dBm typ. wideband, 400 to 2500 MHz excellent L-R isolation, 50 dB typ.


    Original     		LAVI-25VH+ 23dBm) CK605 2002/95/EC) mater54 PDF

    microwave MARCONI

    Abstract: H40P NN12 P35-5123-000-200 MARCONI power
    Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm


    Original     		P35-5123-000-200 26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz. 463/SM/02579/000 microwave MARCONI H40P NN12 MARCONI power PDF

    Untitled

    Abstract: No abstract text available
    Text: RFCR2310 RFCR2310 900MHz to 930MHz Single Junction Drop-In Circulator 900MHz TO 930MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -70dBc IMD Typical  Isolation Greater than 23dB


    Original     		RFCR2310 900MHz 930MHz -70dBc RFCR2310 DS120501 PDF

    200MHZ

    Abstract: 2SC3123 marking he
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F TYP. 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		2SC3123 OT-23 Juncti55 260MHz 200MHZ 200MHZ 2SC3123 marking he PDF

    Untitled

    Abstract: No abstract text available
    Text: Frequency Mixer ZAY-1 Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.10 14 6.05 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 6.00 LO = +23dBm 5.95 5.90 10 5.85 9 5.80 8


    Original     		30MHz 20dBm 23dBm 26dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: Frequency Mixer ZAY-2 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 15 7.00 6.95 LO = +20dBm 13 LO = +23dBm 12 LO = +26dBm LO = +23dBm Conversion Loss dB Conversion Loss (dB) 14 6.90 6.85 11 6.80 10 6.75 9 6.70


    Original     		30MHz 20dBm 23dBm 26dBm PDF

    MGF0916A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		MGF0916A MGF0916A 23dBm 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: High Power Bi-Directional Coupler 50Ω 23dB Coupling Maximum Ratings DC Pass SYBD-23-13HP+ 800 to 1000 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 2A Permanent damage may occur if any of these limits are exceeded.


    Original     		SYBD-23-13HP+ JB1233 2002/95/EC) M119986 ED-12713/5 SYBD-20-13HP+ PDF

    ZNDC-23-2G

    Abstract: ZNDC-23-2G-S
    Text: Coaxial ZNDC-23-2G+ ZNDC-23-2G Directional Coupler 50Ω 23dB 800 to 2000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power input 3W Max. Permanent damage may occur if any of these limits are exceeded.


    Original     		ZNDC-23-2G+ ZNDC-23-2G FM587 ZNDC-23-2G-S( M119986 ED-10203 ZNDC-23-2G ZNDC-23-2G-S PDF

    SE5003L

    Abstract: sige 5003L SE5003L-EK1 SE5003 2527L SE5003L-R SIGE SEMICONDUCTOR 2527l 5003L SIGE 2527l
    Text: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed


    Original     		SE5003L 23dBm IEEE802 SE5003L DST-00314 Feb-25-2011 sige 5003L SE5003L-EK1 SE5003 2527L SE5003L-R SIGE SEMICONDUCTOR 2527l 5003L SIGE 2527l PDF

    pc1678g

    Abstract: 77A7 1678G
    Text: — 150 — fi P C 16 7 8 G o ia S im * m X / " + 17.5dBrn typ o ««Wtt-2.0GHztyp 0.1G H z 3dB i ' ' 1? V O S ® « O H£:ÎJŸIJÎ#-23dB ty p a t 0.5G H z O T y U— > 3 •35d B ty p a t 0.5GH z o/i-y'r —v 8fy -V<onm. 0 -i »^ae&«effl®esw T„ = 2 5 0


    OCR Scan     		---23dB H85TZ uPC1678G pc1678g 77A7 1678G PDF

    SCL 1058

    Abstract: GP145 IDS800 MGF0915A fet GP145 3268
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		MGF0915A MGF0915A 23dBm 50pcs) SCL 1058 GP145 IDS800 fet GP145 3268 PDF

    Transistor W03

    Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
    Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RFCR2704 RFCR2704 2090MHz to 2190MHz Single Junction Drop-In Circulator 2090MHz TO 2190MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -75dBc IMD Typical  Isolation Greater than 23dB


    Original     		RFCR2704 2090MHz 2190MHz -75dBc RFCR2704 DS120223 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt


    OCR Scan     		CA3049, CA3102 500MHz 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching


    Original     		RF5112 21dBm, 185mA 2400MHz 2500MHz 23dBm, 250mA 16-Pin, IEEE802 11b/g/n PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V 28dB Typical Small Signal Gain  50 Input and Interstage Matching  2400MHz to 2500MHz Frequency Range  +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC


    Original     		RF5125 2400MHz 2500MHz 23dBm, 250mA 21dBm, 185mA 16-Pin, IEEE802 11b/g/n PDF

    Untitled

    Abstract: No abstract text available
    Text: MAMX-009646-23DBML E-Series Surface Mount Mixer 2-2200 MHz M/A-COM Products Advanced - Rev. V1 Product Image Features • LO Power +23 dBm  Up to +23 dBm RF  Surface Mount  Tape and reel packaging available  260°C Reflow Compatible


    Original     		MAMX-009646-23DBML MAMX-009646-23DBML PDF

    wifi RECEIVER CIRCUIT DIAGRAM

    Abstract: wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
    Text: RF5765 2.4GHz 802.11b/g/n WiFi FRONT-END MODULE Features    Integrated 2.4GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b Meeting 11b Spectral Mask Tx In


    Original     		RF5765 11b/g/n 16-pin, 20dBm, 23dBm IEEE802 RF5765 11b/g765 wifi RECEIVER CIRCUIT DIAGRAM wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM PDF