Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. 4R3 VW COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 2 - ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S P LTR DESCRIPTION E R E V IS E D PER DATE DWN JDP SLB 23AUG06 EC O -06-010377 APVD D
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23AUG06
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR NOTES: A A A A 5 B PACK IN ACCORDANCE WITH AMP SPEC DATE ECR —06 —01 8891 DWN 23AUG06
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23AUG06
23AUG06
58C/U
URM43,
31MAR2000
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PDF
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RB501V-40
Abstract: No abstract text available
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB501V-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB501V-40
255E-07
232E-11
000E-05
656E-09
RB501V-40
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PDF
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446 DIODE
Abstract: RB548W
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB548W No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI
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Original
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23-Aug-06
RB548W
810E-08
52E-11
000E-06
378E-09
446 DIODE
RB548W
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PDF
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ELMOS
Abstract: TCND3000
Text: TCND3000 Vishay Semiconductors Reflective Sensor for Touchless Switch Description TCND3000 is a reflective optical sensor for applications using the HALIOS High Ambient Light Independent Optical System principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a
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TCND3000
TCND3000
18-Jul-08
ELMOS
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 2 3 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E REVISIONS DIST B P NOTES: D PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
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23AUG06
RG58C/U,
41A/U,
URM45,
31MAR2000
U478224
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PDF
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UP 5035 LCD METER
Abstract: cny70 heart pulse rate sensor phototransistor MTBF IEC-60050 Photodiode Arrays MTBF Zener diode smd marking e4 block diagram of cath lab dual Phototransistor mouse TCND5000 TCRT1000
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book optical sensors vishay vse-db0087-0610 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0087-0610
UP 5035 LCD METER
cny70 heart pulse rate sensor
phototransistor MTBF
IEC-60050
Photodiode Arrays MTBF
Zener diode smd marking e4
block diagram of cath lab
dual Phototransistor mouse
TCND5000
TCRT1000
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PDF
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RB050L SPICE
Abstract: RB050L-40
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB050L-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB050L-40
273E-06
482E-10
000E-04
294E-08
RB050L SPICE
RB050L-40
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PDF
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RB520S-30
Abstract: No abstract text available
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB520S-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB520S-30
684E-08
883E-11
000E-06
656E-09
RB520S-30
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PDF
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VO1263AAC
Abstract: VO1263AACTR VO1263AB VDE0884 VO1263
Text: VO1263AAC/AACTR/AB Vishay Semiconductors Dual Photovoltaic MOSFET Driver Solid State Relay Features • High Open Circuit Voltage, up to 14.6 V Pb-free typical • High Short Circuit Current, up to 42 µA e3 typical • Isolation Test Voltage 5300 VRMS RoHS
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Original
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VO1263AAC/AACTR/AB
2002/95/EC
2002/96/EC
i179020
UL1577,
E52744
VDE0884)
E52744,
08-Apr-05
VO1263AAC
VO1263AACTR
VO1263AB
VDE0884
VO1263
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PDF
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208-mils
Abstract: EDR-7320 CAT24C64 MD-1102 soik8
Text: CAT24C64 64-Kb I2C CMOS Serial EEPROM FEATURES DEVICE DESCRIPTION • Supports Standard and Fast I2C Protocol The CAT24C64 is a 64-Kb CMOS Serial EEPROM devices, internally organized as 8192 words of 8 bits each. ■ 1.8 V to 5.5 V Supply Voltage Range ■ 32-Byte Page Write Buffer 1
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Original
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CAT24C64
64-Kb
CAT24C64
32-byte
MD-1102
208-mils
EDR-7320
soik8
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PDF
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kx13
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR 0 21.0 0 NOTES: A A LOC ALL RIGHTS RESERVED. PACK IN ACCORDANCE WITH AMP SPEC Ag A THIS ITEM MUST BE WHITE B DATE
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23AUG06
23AUG06
31MAR2000
kx13
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PDF
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208-mils
Abstract: 208mils CAT24C64 soik8 CAT24C64YI-GT3
Text: CAT24C64 64-Kb I2C CMOS Serial EEPROM FEATURES DEVICE DESCRIPTION • Supports Standard and Fast I2C Protocol The CAT24C64 is a 64-Kb CMOS Serial EEPROM devices, internally organized as 8192 words of 8 bits each. ■ 1.8 V to 5.5 V Supply Voltage Range ■ 32-Byte Page Write Buffer 1
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Original
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CAT24C64
64-Kb
32-Byte
CAT24C64
MD-1102,
208-mils
208mils
soik8
CAT24C64YI-GT3
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PDF
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rb55
Abstract: RB558W
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB558W No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI
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Original
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23-Aug-06
RB558W
786E-07
621E-11
000E-05
656E-09
rb55
RB558W
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PDF
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RB500V-40
Abstract: No abstract text available
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB500V-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB500V-40
557E-08
912E-11
000E-06
656E-09
RB500V-40
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PDF
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M 23097
Abstract: 23097 RB520G-30
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB520G-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB520G-30
817E-08
53E-11
000E-06
378E-09
M 23097
23097
RB520G-30
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PDF
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elmos
Abstract: E90901 TCND3000 ELMOS 100 Elmos Semiconductor AG
Text: TCND3000 Vishay Semiconductors Reflective Sensor for Touchless Switch Description TCND3000 is a reflective optical sensor for applications using the HALIOS High Ambient Light Independent Optical System principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a
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Original
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TCND3000
TCND3000
08-Apr-05
elmos
E90901
ELMOS 100
Elmos Semiconductor AG
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST E B R E V IS IO N S LTR B NOTES: /\ PACK / K 1 0 0 TRAY A\ Ag A\ TH IS 5 6 7 IN AC CO RDANCE WITH AM P PACK SPEC
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23AUG06
23AUG06
31MAR2000
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PDF
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Brad Harrison
Abstract: BZE6-2RN-R BZ-2RQ77 IPR19699
Text: CATALOG MICRO SWITCH SWITCH - a Honeywell Division FED. MFG. CODE L I S T I NG BZE6-2RN-R ENCLOSED 91929 QL I z cr 4X SEAL RING c\i I 2X 6 - 3 2 UNC HEX NUT / T \ CD Ld \ 2X 6 - 3 2 UNC X 1.750 ROUND HEAD MACHINE S C R E W /T \ Kl 32 UNC X (.312) FLAT HEAD SELF LOCKING SCREW
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IPR19699
7179A
001705T|
22NOVQ5
23AUG06
BZ-2RQ77
A-125,
240Vac
5M-1982
Brad Harrison
BZE6-2RN-R
BZ-2RQ77
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PDF
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7717
Abstract: No abstract text available
Text: MICRO SWITCH F R E E P O R T . IL L IN O IS . U S. A A D IV IS IO N O F FED. M FS . HONEYW ELL c a t a l o g l is t in g BZE6-RNX1 SWITCH - ENCLOSED CODE l l | | ir I to ÜJ M CD SEAL RING FLAT WASHER (4 ELASTOMER PLUNGER SEAL SECURED TO COMPONENTS BY EXTERNAL BANDING(2V
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C053I9I-G
C055989
EIC0726I8
23NOVQ5
23AUG06
270CTQ6
29AUG07
BZ-RQXI67
5A-125,
HP-125
7717
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PDF
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Untitled
Abstract: No abstract text available
Text: CATALOG MCRO SWITCH SWITCH - ENCLOSED a Honeywell Division FED. MFG . CODE L IS T IN G BZE6-2R N -C 9192» 1 z a : 4X SEAL RING CN I 2X 6 - 3 2 UNC HEX N U T / 1 \ CD LU A 6 - 3 2 UNC X .312 FLAT HEAD SELF LOCKING SCREW 2X 6 - 3 2 UNC X (1.750) ROUND HEAD MACHINE S C R E W /T \
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oQ17057
23AUG06
300CT06
DD33014
29AUG07
04CK030
240Vac
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUGUST ,2006- E PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 B P LTR DESCRIPTION B DATE ECR —06 —018891
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23AUG06
URM91,
31MAR2000
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PDF
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PT-3110P
Abstract: PT-1540P PT-1340p PT-2130FP PT1245PPQ PT-1245PQ PT-3110PQ pk-12n40peq SC616MNG 27n25
Text: RoHS CERTIFICATE of COMPLIANCE Date June 17, 2009 Supplier Name Mallory Sonalert Products, Inc. Contact Person Dan O'Brien The information provided will be used solely for the purpose of supporting the EU directive for RoHS certification. Title Vice President Sales & Marketing
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Original
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2002/95/EC
SC648ADP
SC648AD
SC648AE
SC648AH
SC648AJ
SC648AK
SC648ANJ
SC648ANP
SC648AN
PT-3110P
PT-1540P
PT-1340p
PT-2130FP
PT1245PPQ
PT-1245PQ
PT-3110PQ
pk-12n40peq
SC616MNG
27n25
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PDF
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RB521S-30
Abstract: No abstract text available
Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB521S-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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23-Aug-06
RB521S-30
019E-06
081E-11
000E-04
656E-09
RB521S-30
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PDF
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