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    232 D2PAK Search Results

    232 D2PAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSD19505KTTT Texas Instruments 80V, N ch NexFET MOSFET™, single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD18535KTTT Texas Instruments 60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD18542KTT Texas Instruments 60V, N ch NexFET MOSFET™, single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD19536KTT Texas Instruments 100V, N ch NexFET MOSFET™, single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy
    CSD19506KTT Texas Instruments 80V, N ch NexFET MOSFET™, single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175 Visit Texas Instruments Buy

    232 D2PAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    1604G

    Abstract: 1602G 1603G 1606G 1607G SFS1601G SFS1608G FS06 S1601G S1605
    Text: SFS1601G THRU SFS1608G 16.0 AMPS. Glass Passivated Super Fast Rectifiers Voltage Range 50 to 600 Volts Current 16.0 Amperes D2PAK Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic


    Original     		SFS1601G SFS1608G MIL-STD-202, 260oC/10 25ambient 1604G 1602G 1603G 1606G 1607G SFS1608G FS06 S1601G S1605 PDF

    IRFP460Z

    Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
    Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB


    Original     		O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205 PDF

    S5KP10

    Abstract: S5KP10A S5KP11 S5KP11A S5KP12
    Text: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode


    Original     		TH97/10561QM O-263) UL94V-O J-STD-020C, 10x1000 S5KP10 S5KP10A S5KP11 S5KP11A S5KP12 PDF

    S5KP10C

    Abstract: S5KP10CA S5KP11C S5KP11CA S5KP12C
    Text: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 0.357 9.1 1 2 3 0.110(2.8) 0.236(6.0) 0.197(5.0) 0.055(1.4) 0.039(1.0) 2 * Case : D PAK(TO-263) * Epoxy : UL94V-O rate flame retardant


    Original     		TH97/10561QM O-263) UL94V-O J-STD-020C, 10x1000 S5KP10C S5KP10CA S5KP11C S5KP11CA S5KP12C PDF

    S5KP10

    Abstract: S5KP10A S5KP11 S5KP11A S5KP12
    Text: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode


    Original     		TH97/10561QM O-263) UL94V-O J-STD-020C, 10x1000 S5KP10 S5KP10A S5KP11 S5KP11A S5KP12 PDF

    S5KP10

    Abstract: S5KP10A S5KP11 S5KP11A S5KP12
    Text: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 2 * Case : D PAK TO-263 * Epoxy : UL94V-O rate flame retardant * Lead : Surface Mount per J-STD-020C, Method 208 guaranteed * Polarity : Heatsink is Anode


    Original     		TH97/10561QM O-263) UL94V-O J-STD-020C, 10x1000 S5KP10 S5KP10A S5KP11 S5KP11A S5KP12 PDF

    S5KP Series

    Abstract: S5KP10 S5KP10A S5KP11 S5KP11A S5KP12 S5KP12A S5KP13 S5KP13A
    Text: S5KP SERIES TRANSIENT VOLTAGE SUPPRESSOR VBR : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 0.110 2.8 0.236(6.0) 0.197(5.0) 0.055(1.4) 0.039(1.0) 0.035(0.9)max. 0.108(2.75) 0.092(2.35) 0.108(2.75) 0.092(2.35) MECHANICAL DATA 2 0.335(8.5) 0.357(9.1) 0.418(10.6)


    Original     		O-263) UL94V-O MIL-STD-202, 10x1000 S5KP Series S5KP10 S5KP10A S5KP11 S5KP11A S5KP12 S5KP12A S5KP13 S5KP13A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTB55N06Z TM O S E -FE T High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 16m i2 N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h v o lta g e T M O S E - F E T is d e s ig n e d to


    OCR Scan     		MTB55N06Z PDF

    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


    Original     		SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150 PDF

    S5KP10C

    Abstract: S5KP10CA S5KP11C S5KP11CA S5KP12C
    Text: Certificate TH97/10561QM SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VRM : 5.0 - 180 Volts PPK : 5000 Watts D2PAK FEATURES : 0.357 9.1 1 2 3 0.110(2.8) 0.236(6.0) 0.197(5.0) 0.055(1.4) 0.039(1.0) 2 * Case : D PAK(TO-263) * Epoxy : UL94V-O rate flame retardant


    Original     		TH97/10561QM O-263) UL94V-O J-STD-020C, 10x1000 S5KP10C S5KP10CA S5KP11C S5KP11CA S5KP12C PDF

    TMOS E-FET

    Abstract: MTB55N06Z
    Text: MOTOROLA Order this document by MTB55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB55N06Z TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB55N06Z/D MTB55N06Z TMOS E-FET MTB55N06Z PDF

    Untitled

    Abstract: No abstract text available
    Text: MTB55N06Z Preferred Device Power MOSFET 55 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This high energy device also offers a drain−to−source diode with fast recovery time. Designed for


    Original     		MTB55N06Z MTB55N06Z/D PDF

    Untitled

    Abstract: No abstract text available
    Text: OUTLINE DRAWING Unit: inch mm 37 38 39 .022 (0.56) DIA. .018 (0.46) .034 (0.87) DIA. .028 (0.71) 1.1 (27.9) MIN. 1.02 (26.0) MIN. .165 (4.2) .217 (5.51) .160 (4.06) MAX. .107 (2.72) .079 (2.0) DIA. .080 (2.03) MAX. DO-41G DO-35 .350 (8.9) .300 (7.6) LL-34


    Original     		DO-41G DO-35 LL-34 PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF

    126N10N

    Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 PG-TO220-3 PG-TO263-3 PG-TO262-3 126N10N 123N10N D46 diode 126n10 IPP126N10N3 G JESD22 PG-TO220-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features Order codes TAB TAB STB6N60M2 3 1 1 3 2 D PAK STD6N60M2 VDS @ TJmax RDS on max ID 650 V 1.2 Ω


    Original     		STB6N60M2, STD6N60M2 STB6N60M2 DocID024772 PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    ic lm 7500

    Abstract: MC1488 sot89 mark code AE
    Text: MC14C88B Quad Low Power Line Driver The MC14C88B is a low power monolithic quad line driver, using BiMOS technology, which conforms to EIA–232–D, EIA–562, and CCITT V.28. The inputs feature TTL and CMOS compatibility with minimal loading. The outputs feature internally controlled slew rate limiting, eliminating the need


    Original     		MC14C88B MC1488, SN75188, SN75C188, DS1488, DS14C88. ic lm 7500 MC1488 sot89 mark code AE PDF