22AA1 Search Results

Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V)

Contextual Info: SSM6J503NU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM6J503NU パワーマネジメントスイッチ 単位: mm • • 1.5V 駆動です オン抵抗が低い: RDS ON = 89.6 mΩ (最大) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (最大) (@VGS = -1.8 V)

Contextual Info: SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS SSM6J502NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V)

Contextual Info: SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J502NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J501NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V)

ssm6j503nu

Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)

Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V)

PKF 4111A SI

Abstract: PKF 5713 SI PKF 4110B SI 2113A 5617 PKF 2611 PI PKF 4121A SI PKF 4621 SI pkf 4910a PKF 4610A SI
Contextual Info: PKF series PKF series General information • SMD and through hole versions with ultra-low component height 8.0 mm 0.315 in. • Up to 87% efficiency at full load • Safety requirements in accordance with EN60950 • MTTF >10 million hours at +50°C case

Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOS SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V)

Contextual Info: SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM6J503NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V)

22-HIM-A3

Abstract: AK-R2-360P500 22-HIM-C2S 20AC015A0AYNANC0 22A D4P0N104 Powerflex User Manual wireless 3-phase starter using rf technology wireless 3-phase motor starter using RF technology 20b-enc-1 22F-A4P2N103 140M-F8E-C45
Contextual Info: SELECTION GUIDE POWERFLEX AC DRIVES THE INTELLIGENT MOTOR CONTROL SOLUTION FOR YOUR APPLICATION REQUIREMENTS AUTOMOTIVE BREWING BEVERAGE FOOD PACKAGING PHARMACEUTICAL PETROCHEMICAL WATER WASTEWATER MINING AGGREGATE CEMENT OIL & GAS PRINTING & PUBLISHING

Contextual Info: SSM6J502NU 東芝電界効果トランジスタシリコンPチャネルMOS形 U-MOSⅥ SSM6J502NU パワーマネジメントスイッチ • • 単位: mm 1.5V 駆動です オン抵抗が低い : RDS(ON) = 60.5 mΩ (最大) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (最大) (@VGS = -1.8 V)

powerflex 753 programming manual

Abstract: 22A D4P0N104 Powerflex User Manual rockwell powerflex 753 wiring diagram Allen-Bradley 22A-D2P3N104 22A-D4P0N104 22-RF012-BL 22B-D2P3N104 22B-D4P0N104 22A-D1P4N104 22A-D6P0N104
Contextual Info: Technical Data PowerFlex 4-Class of AC Drives - PowerFlex™ 4 - PowerFlex™ 40 PowerFlex™ 4-Class AC Drives Technical Data Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley PowerFlex 4-Class AC drives are the

22A D4P0N104 Powerflex User Manual

Abstract: AK-R2-360P500 22A-V1P5N104
Contextual Info: Technical Data PowerFlex 4 and 40 AC Drives Original Instructions Topic Product Overview Reference Materials Packaging and Mounting Start Up, Programming and Operation Optimized Performance Sensorless Vector Performance Sensorless Vector Control Performance

rockwell powerflex 753 wiring diagram

Abstract: 22A D4P0N104 Powerflex User Manual Allen-Bradley 22A-D2P3N104 powerflex 753 programming manual 140M-C2E-C16 powerflex 4 22B-D010N104 22B-D024N104 22-RJ45CBL-C20 22A-A3P6N103
Contextual Info: PowerFlex 4 and 40 Technical Data ADJUSTABLE FREQUENCY AC DRIVES PowerFlex 4 and 40 Technical Data Product Overview Providing users with powerful motor speed control in a compact, space saving design, the Allen-Bradley® PowerFlex® 4 and 40 AC drives are the smallest

Contextual Info: SSM6J505NU MOSFETs Silicon P-Channel MOS U-MOS SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V)

22AA1

Contextual Info: SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J502NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V)

SSM6J501NU

Abstract: 22AA1
Contextual Info: SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ SSM6J501NU Power Management Switch Applications • • Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V)

MUX2T01

Contextual Info: MACH 5 CPLD Family BE Y O N D PE R FO RM AN C E Fifth G eneration MACH A rc h it^ w ^ .^ FEATURES P u b lic atio n # 2 0 4 4 6 A m en d m en t/O Rev: G Issu e D ate: N o v e m b e r 1 9 9 8 MACH Families ♦ High logic densities and l/Os for increased logic integration

ssm6k504

Contextual Info: SSM6K504NU MOSFETs Silicon N-Channel MOS U-MOS-H SSM6K504NU 1. Applications • High-Speed Switching 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 19.5 mΩ (max) (@VGS = 10 V)

uDFN-6

Abstract: UDFN6 SSM6K504NU 22AA1
Contextual Info: SSM6K504NU MOSFETs Silicon N-Channel MOS U-MOS-H SSM6K504NU 1. Applications • High-Speed Switching 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 19.5 mΩ (max) (@VGS = 10 V)

rockwell powerflex 753 wiring diagram

Abstract: powerflex 753 programming manual powerflex 753 connection diagram Allen-Bradley VFD Powerflex 700S 20-750-2262D-2R 20-750-2262C-2R 22A D4P0N104 Powerflex User Manual 750-UM001 22F-A2P5N103 heidenhain rod 456
Contextual Info: PowerFlex Low Voltage Drives Selection Guide Powerful performance. Flexible control. PowerFlex Low Voltage Drives Selection Guide PowerFlex Family of Drives Advantage 2 PowerFlex Drives At-a-Glance 10 PowerFlex Drives Selection PowerFlex 4M PowerFlex 4 PowerFlex 40