2200 RESISTOR Search Results

nec j137

Abstract: J137 nec j297 UPB586G divide-by-256 uPB586 BF08 UPB586B UPB586G-E1 Vcc, pin 4
Contextual Info: 2.5 GHz DIVIDE- BY- 512/256 PRESCALER UPB586B UPB586G TEST CIRCUIT FEATURES • HIGH FREQUENCY OPERATION TO 2.5 GHz VCC M • WIDE BAND OPERATION 2200 pF* • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% 2200 pF 1 8 2 7 3 6 4 5 2200 pF 2200 pF INPUT • AVAILABLE IN TAPE AND REEL

Contextual Info: PA1128-12 2000 -2200 MHz. M/CffOmVECap. Linear Power Amplifier Features typical values High Frequency Operation.2200 MHz. High Output Power. +32.0 dBm. High dBm.

Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

UPB585

Abstract: "Frequency Divider" ghz UPB585G UPB585G-E1 BF08 UPB585B mini-flat
Contextual Info: UPB585B* 2.5 GHz DIVIDE- BY- 4 PRESCALER UPB585G *B VERSION FOR HI-REL APPLICATIONS ONLY FEATURES TEST CIRCUIT • HIGH FREQUENCY OPERATION: 2.5 GHz VCC • WIDE BAND OPERATION 2200 pF • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% 1 8 2 7 3 6 4 5 2200 pF 2200 pF

12v POWER SUPPLY BOARD 94V0

Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

D1U4CS-W-2200-12-HC4C

Abstract: ps_kill
Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

Contextual Info: PA1129 2000 -2200 MHz. M C/?OmVFCap. Linear Power Amplifier Features typical values High Frequency Operation. 2200 MHz. High Output Pow er. +30.2 dBm. High IP dBm.

FCI 51732

Abstract: vsb 48 smb ps_kill POWER SUPPLY BOARD 94V0 120 12v POWER SUPPLY BOARD 94V0
Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hot-swapping redundant systems. The main output is 12V and standby output of 5V. Packaged in 1U low profile, it is designed

Contextual Info: PA11 4 0 2000 -2200 MHz. WCDMA Features M /CffOmVFCcxp. Linear Power Amplifier typ ical v alu es High Frequency Operation.2200 MHz. High Gain. +27.5 dB. LowNoise dB.

Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

Contextual Info: D1U4CS-W-2200-12-HxxC Series www.murata-ps.com AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hot-swapping redundant systems. The main output is 12V with a standby output of 5V or 3.3V. Packaged in a 1U low profile

1.0K 250V X2

Abstract: POWER SUPPLY BOARD 94V-0 POWER SUPPLY BOARD 94V0 120 12v POWER SUPPLY BOARD 94V0
Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hot-swapping redundant systems. The main output is 12V and standby output of 5V. Packaged in 1U low profile, it is designed

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

vishay MKT 250V F1772

Abstract: F1772-447-22 3682-2 F1772-2200 F1772-468-22 F177244722 F1772-447-226 F1772
Contextual Info: F1772-2200 Vishay Roederstein AC-Capacitors, Suppression Capacitors Class X2 AC 275V MKT Dimensions in mm LEAD LENGTH X (mm) 4-1 6-1 15-1 30+5 ORDERING CODE* F1772- . . . - 2204 / 2264 F1772- . . . - 2200 / 2260 F1772- . . . - 2215 / 2265 F1772- . . . - 2230 / 2263

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

R1279

Contextual Info: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1279NC22x to R1279NC25x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 2200-2500 V VDSM Non-repetitive peak off-state voltage, (note 1) 2200-2500

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: 30 MHz to 2200 MHz Quadrature Modulator ADL5385 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Output frequency range: 30 MHz to 2200 MHz 1 dB output compression: 11 dBm @ 350 MHz Noise floor: –159 dBm/Hz @ 350 MHz Sideband suppression: −50 dBc @ 350 MHz

R1279NC22X-25X

Abstract: R1279 R1279NC
Contextual Info: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1279NC22x to R1279NC25x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 2200-2500 V VDSM Non-repetitive peak off-state voltage, (note 1) 2200-2500

DELL 1950 power supply diagram

Abstract: adf4351 adl5385 application note ADL5386 AD9777 ad5385 1569P qam transmitter
Contextual Info: 30 MHz to 2200 MHz Quadrature Modulator ADL5385 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Output frequency range: 30 MHz to 2200 MHz 1 dB output compression: 11 dBm @ 350 MHz Noise floor: –159 dBm/Hz @ 350 MHz Sideband suppression: −50 dBc @ 350 MHz